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HANBit
HMS12832M4V
SRAM MODULE 512KByte (128K x 32-Bit) 3.3V, 64Pin-SIMM Part No. HMS12832M4V
GENERAL DESCRIPTION
The HMS12832M4V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board. PD0 and PD1 identify the module's density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module's 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW. For reliability, this SRAM module is designed as multiple power and ground pin. All module components may be powered from a single +3.3V DC power supply and all inputs and outputs are fully TTL-compatible. Reading is
FEATURES
w Access times : 8, 10, 12, 15 and 20ns w High-density 512KByte design w High-reliability, high-speed design w Single + 3.3V 0.3V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pinout w FR4-PCB design
PIN ASSIGNMENT
PIN SYMBOL PIN SYMBOL PIN SYMBOL PIN SYMBOL 1 2 3 4 5 6 7 8 Vss NC NC DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 Vcc A0 A7 A1 A8 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 A2 A9 DQ12 DQ4 DQ13 DQ5 DQ14 DQ6 DQ15 DQ7 Vss /WE A15 A14 /CE2 /CE1 33 34 35 36 37 38 39 40 41 42 43 44 45 46 47 48 /CE4 /CE3 NC A16 /OE Vss DQ24 DQ16 DQ25 DQ17 DQ26 DQ18 DQ27 DQ19 A3 A10 49 50 51 52 53 54 55 56 57 58 59 60 61 62 63 64 A4 A11 A5 A12 Vcc A13 A6 DQ20 DQ28 DQ21 DQ29 DQ22 DQ30 DQ23 DQ31 Vss
OPTIONS
w Timing 8ns access 10ns access 12ns access 15ns access 20ns access w Packages 64-pin SIMM
MARKING
-8 -10 -12 -15 -20 M
9 10 11 12 13 14 15 16
SIMM TOP VIEW
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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FUNCTIONAL BLOCK DIAGRAM
32 17 A0-16 /WE /OE /CE /CE1 A0-16 /WE /OE /CE /CE2 A0-16 /WE /OE /CE /CE3 A0-16 /WE /OE /WE /OE /CE /CE4 DQ24-31 DQ16-23 DQ 8-15 DQ 0-7
HMS12832M4V
DQ0 - DQ31 A0 - A16
U1
U2
U3
U4
PRESENCE-DETECT PD0 = Open PD1 = Open
TRUTH TABLE
MODE STANDBY NOT SELECTED READ WRITE /OE X H L X /CE H L L L /WE X H H L DQ HIGH-Z HIGH-Z Dout Din POWER STANDBY ACTIVE ACTIVE ACTIVE
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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ABSOLUTE MAXIMUM RATINGS*
PARAMETER Voltage on Any Pin Relative to Vss Voltage on Vcc Supply Relative to Vss Power Dissipation Storage Temperature Operating Temperature SYMBOL VIN,OUT VCC PD TSTG TA
HMS12832M4V
RATING -0.5V to 4.6V -0.5V to 4.6V 4.0W oC to +150oC -65 0oC to +70oC
w Stresses greater than those listed under " Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
RECOMMENDED DC OPERATING CONDITIONS ( TA=0 to 70 o C )
PARAMETER Supply Voltage Ground Input High Voltage Input Low Voltage * SYMBOL VCC VSS VIH VIL MIN 3.0V 0 2.2 -0.5* TYP. 3.3V 0 MAX 3.6V 0 Vcc+0.5V** 0.8V
VIL(Min.) = -2.0V ac (Pulse Width 10ns) for I 20 mA
** VIH(Min.) = Vcc+2.0V ac (Pulse Width 10ns) for I 20 mA
DC AND OPERATING CHARACTERISTICS (1)(0oC TA 70 oC ; Vcc = 3.3V 10% )
PARAMETER Input Leakage Current Output Leakage Current Output High Voltage Output Low Voltage * Vcc=3.3V, Temp=25 oC TEST CONDITIONS VIN=Vss to Vcc /CE=VIH or /OE =VIH or /WE=VIL VOUT=Vss to VCC IOH = -4.0mA IOL = 8.0mA SYMBOL ILI IL0 VOH VOL MIN -8 -8 2.4 0.4 MAX 8 8 UNITS A A V V
DC AND OPERATING CHARACTERISTICS (2)
DESCRIPTION TEST CONDITIONS Min. Cycle, 100% Duty /CE=VIL, VIN=VIH or VIL, IOUT=0mA Min. Cycle, /CE=VIH f=0MHZ, /CEVCC-0.2V, VIN VCC-0.2V or VIN0.2V ISB ISB1 200 20 200 20 200 20 mA mA ICC 640 620 600 mA SYMBOL MAX -8 -10 -12 UNIT
Power Supply Current:Operating Power Supply Current:Standby
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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HMS12832M4V
CAPACITANCE (TA =25 oC , f= 1.0Mhz)
DESCRIPTION Input /Output Capacitance Input Capacitance TEST CONDITIONS VI/O=0V VIN=0V SYMBOL CI/O CIN MAX 32 24 UNIT PF PF
* NOTE : Capacitance is sampled and not 100% tested
AC CHARACTERISTICS (0oC TA 70 oC ; Vcc = 3.3V 0.3V, unless otherwise specified)
Test conditions
PARAMETER Input Pulse Level Input Rise and Fall Time Input and Output Timing Reference Levels Output Load VALUE 0V to 3V 3ns 1.5V See below Output Load (B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
Output Load (A)
VL=1.5V
+3.3V
50 DOUT Z0=50 30pF DOUT 353
319 5pF*
READ CYCLE
-10 PARAMETER Read Cycle Time Address Access Time Chip Select to Output Output Enable to Output Output Enable to Low-Z Output Chip Enable to Low-Z Output Output Disable to High-Z Output Chip Disable to High-Z Output Output Hold from Address Change Chip Select to Power Up Time Chip Select to Power Down Time SYMBOL MIN tRC tAA tCO tOE tOLZ tLZ tOHZ tHZ tOH tPU tPD 0 3 0 0 3 0 10 5 5 10 10 10 5 0 3 0 0 3 0 12 6 6 MAX MIN 12 12 12 6 0 3 0 0 3 0 15 7 7 MAX MIN 15 15 15 7 MAX ns ns ns ns ns ns ns ns ns ns ns -12 -15 UNIT
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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HMS12832M4V
WRITE CYCLE
PARAMETER Write Cycle Time Chip Select to End of Write Address Set-up Time Address Valid to End of Write Write Pulse Width Write Recovery Time Write to Output High-Z Data to Write Time Overlap Data Hold from Write Time End of Write to Output Low-Z SYMBOL tWC tCW tAS tAW tWP tWR tWHZ tDW tDH tOW -10 MIN 10 6 0 7 7 0 0 5 0 3 5 MAX MIN 12 8 0 8 8 0 0 6 0 3 6 -12 MAX MIN 15 10 0 9 9 0 0 7 0 3 7 -15 MAX UNIT ns ns ns ns ns ns ns ns ns ns
TIMING DIAGRAMS
Please refer to timing diagram chart.
FUNCTIONAL DESCRIPTION
/CE H L L L /WE X* H H L /OE X H L X MODE Not Select Output Disable Read Write I/O PIN High-Z High-Z DOUT DIN SUPPLY CURRENT l SB, l SB1 lCC lCC lCC
Note: X means Don't Care
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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HMS12832M4V
PACKAGING INFORMATION
98.04 mm
10.16 mm 6.35 mm 16 mm
1
64
2.03 mm
1.02 mm
6.35 mm 85.09 mm
1.27 mm
3.34 mm
0.25 mm MAX
2.54 mm MIN
Gold : 1.040.10 mm 1.27 Solder : 0.9140.10 mm
1.290.08 mm
(Solder & Gold Plating Lead)
ORDERING INFORMATION
Part Number Density Org. Package Component Number 4EA 4EA 4EA 4EA 4EA Vcc Access Time
HMS12832M4V-8 HMS12832M4V-10 HMS12832M4V-12 HMS12832M4V-15 HMS12832M4V-20
512KByte 512KByte 512KByte 512KByte 512KByte
128KX 32bit 128KX 32bit 128KX 32bit 128KX 32bit 128KX 32bit
64 Pin-SIMM 64 Pin-SIMM 64 Pin-SIMM 64 Pin-SIMM 64 Pin-SIMM
3.3V 3.3V 3.3V 3.3V 3.3V
8ns 10ns 12ns 15ns 20ns
URL: www.hbe.co.kr Rev. 1.0 (September / 2002).
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