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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 1/5
H35N03J
N-Channel Enhancement-Mode MOSFET (25V, 35A)
H35N03J Pin Assignment
Tab
1
2
3
3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Features
* RDS(on)=8.5m@VGS=10V, ID=30A * RDS(on)=13m@VGS=4.5V, ID=30A * Advanced trench process technology * High Density Cell Design for Ultra Low On-Resistance * Specially Designed for DC/DC Converters and Motor Drivers * Fully Characterized Avalanche Voltage and Current * Improved Shoot-Through FOM
D
Internal Schematic Diagram
G S
Maximum Ratings & Thermal Characteristics
(TA=25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current *1 Maximum Power Dissipation TA=25oC TA=75 C Operating Junction and Storage Temperature Range Avalanche Energy with Single Pulse ID=35A, VDD=20V, L=0.14mH Junction-to-Case Thermal Resistance Junction-to-Ambient Thermal Resistance(PCB mounted)
*1: Maximum DC current limited by the package. *2: 1-in2 2oz Cu PCB board
*2 o
Symbol VDS VGS ID IDM PD TJ,Tstg EAS RJC RJA
Value 25 20 35 140 57 23 -55 to 150 300 2.2 50
Units V V A A W W
o
C
mJ
O O
C/W C/W
Switching Test Circuit
VDD
Switching Waveforms
ton td(on) toff tr td(off) 90% tf 90 %
VIN VGEN RG G
D
VOUT
Output, VOUT
10%
10%
Inverted
90% 50% 50%
S
Input, VIN
10%
Pulse Width
H35N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
ELectrical Characteristics
Characteristic Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Gate Resistance Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage
NOTE: Pulse Test: Pulse Width 300us, Duty Cycle2%
Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 2/5
Symbol
Test Condition
Min.
Typ.
Max.
Unit
BVDSS RDS(on) RDS(on) VGS(th) IDSS IGSS Rg gfs
VGS=0V, ID=250uA VGS=4.5V, ID=30A VGS=10V, ID=30A VDS=VGS, ID=250uA VDS=24V, VGS=0V VGS=20V, VDS=0V VDS=0V, VGS=1V at 1MHz VDS=10V, ID=35A
25 1 -
10 6.5 1.6 1 6
13 9 3 1 100 -
V m V uA nA S
Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS=15V, VGS=0V, f=1MHz VDD=15V, RL=15, ID=1A VGEN=10V, RG=24 VDS=15V, ID=35A, VGS=10V
-
18.4 3.57 2.9 11.7 3.87 32.13 5.4 1176.3 268.43 142.67
nS pF nC
IS VSD IS=20A, VGS=0V
-
0.87
35 1.5
A V
H35N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Characteristics Curve
Fig.1 Output Characteristic I D - Drain-to-Source Current (A)
80
V GS= 5.0V, 6.0V, 10.0V
Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 3/5
Fig.2 Transfer Characteristic I D - Drain Source Current (A) 60 VDS =10V 40
60
4.5V 4.0V
40
20
3.5V 3.0V
20
25oC TJ = 125oC -55oC
0 0 1 2 3 4 5
0 2 2.5 3 3.5 4 4.5 5 VGS - Gate-to-Source Voltage (V)
VDS - Drain-to-Source Voltage (V)
Fig.3 On Resistance vs Drain Current RDS(ON) - On-Resistance (m )
RDS(ON) - On-Resistance (m )
35 30 25 20 V GS = 4.5V 15 10 5 0 0 20 40 60 80 VGS=10.0V
50
Fig.4 On Resistance vs Gate to Source Voltage ID =30A
40 30 20 10 T J =25oC 0 2 4 6 8 10
125oC
I D - Drain Current (A)
VGS - Gate-to-Source Voltage (V)
Fig.5 On Resistance vs Junction Temperature
RDS(ON) - On-Resistance (Normalized) 1.6 1.4 1.2 1 0.8 0.6 -50
Fig. 6 Capacitance
3000 C - Capacitance (pF) 2500 2000 1500 1000 500 Coss, Crss 0 Ciss f=1MHz V GS=0V
V GS = 10V ID =30A
-25
0
25
50
75
100
o
125
150
0
5
10
15
20
25
T J - Junction Tem perature ( C)
V DS - Drain-to-Source Voltage (V)
H35N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
M A F C G
1 2 3
Date Code
Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 4/5
Marking:
a1
Pb Free Mark
Pb-Free: " . " (Note) H Normal: None
J
35N03 Control Code
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source
N H
a5 L a2
Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
DIM A C F G H L M N a1 a2 a5
Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65
Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05
*: Typical, Unit: mm
a1
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J
A B C D a1 E
Marking:
M F y1 a1
Pb-Free: " . " (Note) H Normal: None
Pb Free Mark
J
35N03 Date Code Control Code
GI y1 y1
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
J K a2 y2
H N L a2 y2
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J
a1 O
DIM A B C D E F G H I J K L M N O a1 a2 y1 y2
Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 -
Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o
*: Typical, Unit: mm
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H35N03J
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200515 Issued Date : 2005.01.01 Revised Date : 2005.10.14 Page No. : 5/5
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120 sec
150oC 200oC 60~180 sec
<3oC/sec
<3oC/sec
183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o
217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245oC 5oC 260 C +0/-5 C
o o
Dipping time 5sec 1sec 5sec 1sec
H35N03J
HSMC Product Specification

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