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HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 1/4
H3055LJ
N-Channel Enhancement-Mode MOSFET (20V, 13A)
H3055LJ Pin Assignment
Tab
1
2
3
3-Lead Plastic TO-252 Package Code: J Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source
Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
D
Internal Schematic Diagram
G S
Features
* RDS(on)=45m@VGS=2.5V, ID=5.2A; RDS(on)=35m@VGS=4.5V, ID=6A * High Density Cell Design for Ultra Low On-Resistance * High Power and Current Handing Capability * Fully Characterized Avalanche Voltage and Current * Ideal for Li ion Battery Pack Applications
Applications
* Battery Protection * Load Switch * Power Management
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o A
Symbol VDS VGS ID IDM PD Tj, Tstg RJA Drain-Source Voltage Gate-Source Voltage Drain Current (Continuous) Drain Current (Pulsed)
*1
Parameter
Ratings 20 12 13 30
Units V V A A W W C C/W
Total Power Dissipation @TA=25 C Total Power Dissipation @TA=75oC Operating and Storage Temperature Range Thermal Resistance Junction to Ambient
*2
o
2 1.3 -55 to +150 62.5
*1: Maximum DC current limited by the package *2: 1-in2 2oz Cu PCB board
H3055LJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25C, unless otherwise noted)
Symbol * Static BVDSS RDS(on) VGS(th) IDSS IGSS gFS * Dynamic Qg Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, ID=1A, VGS=4.5V RGEN=6 VDS=8V, VGS=0V, f=1MHz VDS=10V, ID=6A, VGS=4.5V Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Forward Transconductance VGS=0V, ID=250uA VGS=2.5V, ID=5.2A VGS=4.5V, ID=6A VDS=VGS, ID=250uA VDS=20V, VGS=0V VGS=12V, VDS=0V VDS=10V, ID=6A 20 0.6 7 Characteristic Test Conditions Min.
Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 2/4
Typ.
Max.
Unit
34 25 13
45 35 1.5 1 100 -
V m V uA nA S
4.86 0.92 1.4 562 106 75 8.1 9.95 21.85 5.35
ns pF nC
* Drain-Source Diode Characteristics IS VSD Maximum Diode Forward Current Drain-Source Diode Forward Voltage VGS=0V, IS=1.7A 1.7 1.2 A V
Note: Pulse Test: Pulse Width 300us, Duty Cycle2%
Switching Test Circuit
VDD td(on)
ton tr
Switching Waveforms
td(off)
toff tf 90%
90% RD VIN VGEN RG G S Input, VIN 10% Pulse Width 50% 50% 90% D VOUT Output, VOUT 10% 10%
Inverted
H3055LJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
TO-252 Dimension
M A F C G
1 2 3
Date Code
Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 3/4
Marking:
a1
Pb Free Mark
Pb-Free: " . " (Note) H Normal: None
J
3055L Control Code
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source
N H
a5 L a2
Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
DIM A C F G H L M N a1 a2 a5
Min. 6.35 4.80 1.30 5.40 2.20 0.40 2.20 0.90 0.40 0.65
Max. 6.80 5.50 1.70 6.25 3.00 0.90 2.40 1.50 0.65 *2.30 1.05
*: Typical, Unit: mm
a1
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J
A B C D a1 E
Marking:
M F y1 a1
Pb-Free: " . " (Note) H Normal: None
Pb Free Mark
J
3055L Date Code Control Code
GI y1 y1
Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
J K a2 y2
H N L a2 y2
3-Lead TO-252 Plastic Surface Mount Package HSMC Package Code: J
a1 O
DIM A B C D E F G H I J K L M N O a1 a2 y1 y2
Min. 6.40 5.04 0.40 0.50 5.90 2.50 9.20 0.60 0.66 2.20 0.70 0.82 0.40 2.10 -
Max. 6.80 6.00 5.64 *4.34 0.80 0.90 6.30 2.90 9.80 1.00 0.96 0.86 2.40 1.10 1.22 0.60 2.50 5o 3o
*: Typical, Unit: mm
Important Notice:
* All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
* Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931
H3055LJ
HSMC Product Specification
HI-SINCERITY
MICROELECTRONICS CORP.
Soldering Methods for HSMC's Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile
tP TP Ramp-up TL Tsmax Temperature tL
Spec. No. : MOS200606 Issued Date : 2006.03.01 Revised Date : 2006.05.04 Page No. : 4/4
Critical Zone TL to TP
Tsmin tS Preheat
Ramp-down
25 t 25oC to Peak Time
Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices.
Sn-Pb Eutectic Assembly <3oC/sec
Pb-Free Assembly <3oC/sec
100oC 150oC 60~120 sec
150oC 200oC 60~180 sec
<3oC/sec
<3oC/sec
183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes
o o
217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes
Peak temperature 245oC 5oC 260 C 5 C
o o
Dipping time 10sec 1sec 10sec 1sec
H3055LJ
HSMC Product Specification

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