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| VID 160-12P1 VIO 160-12P1 VDI 160-12P1 IGBT Modules in ECO-PAC 2 Short Circuit SOA Capability Square RBSOA Preliminary data sheet VIO IJK IC25 = 169 A = 1200 V VCES VCE(sat) typ. = 2.9 V VID IK10 VDI AC1 X15 SV18 L9 NTC T16 PS18 A S LMN L9 X15 NTC AC1 X16 B3 Pin arangement see outlines IK10 F1 X16 IGBTs Symbol VCES VGES IC25 IC80 ICM VCEK tSC (SCSOA) Ptot Symbol TC = 25C TC = 80C VGE = 15 V; RG = 6.8 ; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 6.8 ; TVJ = 125C non-repetitive TC = 25C Conditions Conditions TVJ = 25C to 150C Maximum Ratings 1200 20 169 117 200 VCES 10 694 V V A A A s W Features * NPT IGBT's - positive temperature coefficient of saturation voltage - fast switching * FRED diodes - fast reverse recovery - low forward voltage * Industry Standard Package - solderable pins for PCB mounting - isolated DCB ceramic base plate Advantages * space and weight savings * reduced protection circuits * leads with expansion bend for stress relief Typical Applications * AC and DC motor control * AC servo and robot drives * power supplies * welding inverters Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.9 3.3 4.5 3.5 6.5 6 19 400 100 60 600 90 16.1 14.6 6.5 0.36 V V mA mA nA ns ns ns ns mJ mJ nF 0.18 K/W K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies RthJC RthJH IC = 160 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 4 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 600 V; IC = 100 A VGE = 15/0 V; RG = 6.8 VCE = 25 V; VGE = 0 V; f = 1 MHz (per IGBT) with heatsink compound (0.42 K/m.K; 50 m) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 1-4 303 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 Reverse diodes (FRED) Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 154 97 A A VIO Symbol VF IRM trr RthJC RthJH Conditions IF = 100 A; TVJ = 25C TVJ = 125C IF = 75 A; diF/dt = 750 A/s; TVJ = 125C VR = 600 V; VGE = 0 V with heatsink compound (0.42 K/m.K; 50 m) Characteristic Values min. typ. max. 2.3 1.7 79 220 0.9 2.7 V V A ns 0.45 K/W K/W B3 Temperature Sensor NTC Symbol R25 B25/50 Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K VDI Module Symbol TVJ Tstg VISOL Md a IISOL 1 mA; 50/60 Hz mounting torque (M4) Max. allowable acceleration Conditions Maximum Ratings -40...+150 -40...+150 3000 1.5 - 2.0 14 - 18 50 C C V~ Nm lb.in. m/s2 Symbol dS dA Weight Conditions Creepage distance on surface (Pin to heatsink) Strike distance in air (Pin to heatsink) Characteristic Values min. typ. max. 11.2 11.2 24 mm mm g VID Data according to IEC 60747 and refer to a single transistor or diode unless otherwise stated. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 2-4 303 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 250 A 250 TJ = 25C VGE=17V 15V 13V 11V A 200 IC 150 100 TJ = 125C VGE=17V 15V 13V 11V 200 IC 150 100 50 0 0,0 9V 9V 50 0 156T120 156T120 0,5 1,0 1,5 2,0 2,5 VCE 3,0 V 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 V VCE B3 Fig. 1 Typ. output characteristics Fig. 2 Typ. output characteristics 250 A VCE = 20V TJ = 25C 300 TJ = 125C 200 IC A 250 TJ = 25C IF 200 150 150 100 100 50 0 5 6 7 8 9 10 VGE 156T120 50 0 156T120 11 V 0,5 1,0 1,5 2,0 2,5 VF 3,0 V 3,5 Fig. 3 Typ. transfer characteristics Fig. 4 Typ. forward characteristics of free wheeling diode 120 20 V VGE VCE = 600V IC = 100A 300 ns trr A IRM 15 trr 80 10 40 5 IRM TJ = 125C VR = 600V IF = 100A 200 100 0 0 100 200 300 400 QG 156T120 0 0 200 400 600 800 A/s -di/dt 156T120 0 500 nC 1000 Fig. 5 Typ. turn on gate charge Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 3-4 303 VID 160-12P1 VIO 160-12P1 VDI 160-12P1 40 mJ Eon td(on) 120 ns 90 tr 60 t 40 mJ Eoff 30 td(off) Eoff 800 ns 600 t 400 30 Eon 20 VCE = 600V VGE = 15V 20 VCE = 600V VGE = 15V 10 RG = 6.8 30 TJ = 125C 156T120 10 RG = 6.8 200 TJ = 125C 156T120 0 0 50 100 150 IC 0 0 0 50 100 150 IC tf 0 200 A 200 A B3 Fig. 7 Typ. turn on energy and switching times versus collector current 50 mJ 300 ns 240 t 180 120 60 156T120 Fig. 8 Typ. turn off energy and switching times versus collector current 25 mJ 1500 ns 1200 t 900 600 300 156T120 40 Eon VCE = 600V VGE = 15V IC = 100A TJ = 125C Eon td(on) tr 20 Eoff VCE = 600V VGE = 15V IC = 100A TJ = 125C td(off) Eoff 30 20 10 0 0 8 16 24 32 40 RG 15 10 5 0 0 8 16 24 32 RG tf 48 56 0 40 48 56 0 Fig. 9 Typ. turn on energy and switching times versus gate resistor 240 A 1 K/W 0,1 ZthJC RG = 6.8 TJ = 125C VCEK < VCES Fig.10 Typ. turn off energy and switching times versus gate resistor 200 ICM 160 120 80 40 0 0 200 400 600 VCE 156T120 diode 0,01 0,001 0,0001 IGBT single pulse VDI...160-12P1 800 1000 1200 V 0,00001 0,00001 0,0001 0,001 0,01 t 0,1 s 1 Fig. 11 Reverse biased safe operating area RBSOA Fig. 12 Typ. transient thermal impedance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2003 IXYS All rights reserved 4-4 303 |
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