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| Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100 S Pulse, 10% Duty 8/21/02 Rev. 3 PH2226-50M Features NPN Silicon Microwave Power Transistor Common Base Configuration Broadband Class C Operation Diffused Emitter Ballasting Resistors Gold Metalization System Internal Input and Output Impedance Matching Hermetic Metal/Ceramic Package Outline Drawing Absolute Maximum Ratings at 25 C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Total Power Dissipation @ +45 C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG Tj Rating 63 3.0 6 159 -65 to +200 200 Units V V A W C C Electrical Characteristics at 25 C Parameter Collector-Emitter Breakdown Voltage Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability Symbol BVCES ICES RTH(JC) PO GP Min. 63 50 8.0 40 9 Max. 3.0 1.1 3:1 1.5:1 Units V mA C/W W dB % dB IC=15 mA VCE=36 V VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz VCC=36 V, PIN = 8 W, Freq= 2.25 and 2.55 GHz Test Conditions RL VSWR-T VSWR-S Radar Pulsed Power Transistor, 50 Watts, 2.25-2.55 GHz, 100s Pulse, 10% Duty PH2226-50M 8/21/02 Rev. 3 Broadband Test Fixture Impedances F (GHz) TEST FIXTURE INPUT CIRCUIT 50 Z IF TEST FIXTURE OUTPUT CIRCUIT Z OF 50 Z IF () Z OF () 2.25 2.40 2.55 15.0 -j7.0 14.0 -j5.5 13.7 -j4.0 12.8 -j3.0 12.0 -j1.6 11.8 -j0.4 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.macom.com for additional data sheets and product information. North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 2 |
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