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MBRB30H30CT-1 SWITCHMODETM Power Rectifier 30 V, 30 A Features and Benefits * * * * * * Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 150C Operating Junction Temperature 30 A Total (15 A Per Diode Leg) Guard-Ring for Stress Protection http://onsemi.com SCHOTTKY BARRIER RECTIFIER 30 AMPERES 30 VOLTS 1 2, 4 3 Applications * Power Supply - Output Rectification * Power Management * Instrumentation Mechanical Characteristics: 4 I2PAK (TO-262) CASE 418D PLASTIC * * * * * * * MARKING DIAGRAM AYWW B30H30G AKA Case: Epoxy, Molded Epoxy Meets UL 94 V-0 @ 0.125 in Weight: 1.5 Grams (Approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped 50 Units Per Plastic Tube This is a Pb-Free Device 12 3 B30H30 A Y WW AKA G = Device Code = Assembly Location = Year = Work Week = Polarity Designator = Pb-Free Device MAXIMUM RATINGS Please See the Table on the Following Page ORDERING INFORMATION Device MBRB30H30CT-1G Package TO-262 (Pb-Free) Shipping 50 Units/Rail (c) Semiconductor Components Industries, LLC, 2006 1 April, 2006 - Rev. 0 Publication Order Number: MBRB30H30CT-1/D MBRB30H30CT-1 MAXIMUM RATINGS (Per Diode Leg) Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current (Rated VR) TC = 138C Peak Repetitive Forward Current (Rated VR, Square Wave, 20 kHz) Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature (Note 1) Storage Temperature Voltage Rate of Change (Rated VR) Controlled Avalanche Energy (see test conditions in Figures 9 and 10) ESD Ratings: Machine Model = C Human Body Model = 3B Symbol VRRM VRWM VR IF(AV) IFRM IFSM TJ Tstg dv/dt WAVAL Value 30 Unit V 15 30 260 -55 to +150 *55 to +150 10,000 250 > 400 > 8000 A A A C C V/ms mJ V THERMAL CHARACTERISTICS Maximum Thermal Resistance - Junction-to-Case - Junction-to-Ambient RqJC RqJA 2.0 70 C/W ELECTRICAL CHARACTERISTICS (Per Diode Leg) Maximum Instantaneous Forward Voltage (Note 2) (IF = 15 A, TC = 25C) (IF = 15 A, TC = 125C) (IF = 30 A, TC = 25C) (IF = 30 A, TC = 125C) Maximum Instantaneous Reverse Current (Note 2) (Rated DC Voltage, TC = 25C) (Rated DC Voltage, TC = 125C) vF 0.48 0.40 0.55 0.53 iR 0.8 130 mA V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. The heat generated must be less than the thermal conductivity from Junction-to-Ambient: dPD/dTJ < 1/RqJA. 2. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%. http://onsemi.com 2 MBRB30H30CT-1 IF, INSTANTANEOUS FORWARD CURRENT (AMPS) IF, INSTANTANEOUS FORWARD CURRENT (AMPS) 100 100 TJ = 125C 10 TJ = 125C 10 TJ = 25C 1 TJ = 25C 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) 0.1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (VOLTS) Figure 1. Typical Forward Voltage Figure 2. Maximum Forward Voltage 1.0E-00 IR, REVERSE CURRENT (AMPS) 1.0E-01 TJ = 125C IR, MAXIMUM REVERSE CURRENT (AMPS) 1.0E-00 1.0E-01 TJ = 125C 1.0E-02 1.0E-02 1.0E-03 TJ = 25C 1.0E-03 1.0E-04 1.0E-05 0 1.0E-04 1.0E-05 0 TJ = 25C 5 10 15 20 25 30 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) VR, REVERSE VOLTAGE (VOLTS) Figure 3. Typical Reverse Current Figure 4. Maximum Reverse Current IF, AVERAGE FORWARD CURRENT (AMPS) PFO, AVERAGE POWER DISSIPATION (WATTS) 30 25 20 15 10 5 0 100 dc 16 14 12 SQUARE 10 8 6 4 2 0 0 5 10 15 20 25 IO, AVERAGE FORWARD CURRENT (AMPS) DC SQUARE WAVE 110 120 130 140 150 160 TC, CASE TEMPERATURE (C) Figure 5. Current Derating Figure 6. Forward Power Dissipation http://onsemi.com 3 MBRB30H30CT-1 10000 TJ = 25C C, CAPACITANCE (pF) 1000 100 0 5 10 15 20 25 30 VR, REVERSE VOLTAGE (VOLTS) Figure 7. Capacitance R(t), TRANSIENT THERMAL RESISTANCE 10 1 D = 0.5 0.2 0.1 0.05 P(pk) t1 t2 0.1 0.01 SINGLE PULSE 0.01 0.000001 0.00001 0.0001 0.001 0.01 t1, TIME (sec) 0.1 1 10 DUTY CYCLE, D = t1/t2 100 1000 Figure 8. Thermal Response Junction-to-Case http://onsemi.com 4 MBRB30H30CT-1 +VDD IL 10 mH COIL VD MERCURY SWITCH ID IL ID VDD t0 t1 t2 t BVDUT S1 DUT Figure 9. Test Circuit Figure 10. Current-Voltage Waveforms The unclamped inductive switching circuit shown in Figure 9 was used to demonstrate the controlled avalanche capability of this device. A mercury switch was used instead of an electronic switch to simulate a noisy environment when the switch was being opened. When S1 is closed at t0 the current in the inductor IL ramps up linearly; and energy is stored in the coil. At t1 the switch is opened and the voltage across the diode under test begins to rise rapidly, due to di/dt effects, when this induced voltage reaches the breakdown voltage of the diode, it is clamped at BVDUT and the diode begins to conduct the full load current which now starts to decay linearly through the diode, and goes to zero at t2. By solving the loop equation at the point in time when S1 is opened; and calculating the energy that is transferred to the diode it can be shown that the total energy transferred is equal to the energy stored in the inductor plus a finite amount of energy from the VDD power supply while the diode is in breakdown (from t1 to t2) minus any losses due to finite component resistances. Assuming the component resistive elements are small Equation (1) approximates the total energy transferred to the diode. It can be seen from this equation that if the VDD voltage is low compared to the breakdown voltage of the device, the amount of energy contributed by the supply during breakdown is small and the total energy can be assumed to be nearly equal to the energy stored in the coil during the time when S1 was closed, Equation (2). EQUATION (1): BV 2 DUT W [ 1 LI LPK AVAL 2 BV -V DUT DD EQUATION (2): 2 W [ 1 LI LPK AVAL 2 http://onsemi.com 5 MBRB30H30CT-1 PACKAGE DIMENSIONS I2PAK (TO-262) CASE 418D-01 ISSUE B C -B- 4 E V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K S V W INCHES MIN MAX 0.335 0.380 0.380 0.406 0.160 0.185 0.026 0.035 0.045 0.055 0.122 REF 0.100 BSC 0.094 0.110 0.013 0.025 0.500 0.562 0.390 REF 0.045 0.070 0.522 0.551 MILLIMETERS MIN MAX 8.51 9.65 9.65 10.31 4.06 4.70 0.66 0.88 1.14 1.40 3.10 REF 2.54 BSC 2.39 2.79 0.33 0.64 12.70 14.27 9.90 REF 1.14 1.78 13.25 14.00 W 1 2 3 A F -T- SEATING PLANE K S J H G D 3 PL M 0.13 (0.005) TB M SWITCHMODE is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MBRB30H30CT-1/D |
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