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| RF Power Field Effect Transistor LDMOS, 865 -- 960 MHz, 90W, 26V 5/14/04 Preliminary MAPLST0810-090CF Features Designed for 865 to 960 MHz Broadband Commercial and Base Station Applications. Typical CW RF Performance at 960MHz, 26VDC: POUT: 90W (P1dB) Gain: 18dB Efficiency: 50% Ruggedness: 10:1 VSWR @ 90W CW, 26V, 900MHz High Gain, High Efficiency and High Linearity Internal Input Match Excellent Thermal Stability Package Style P-238 Maximum Ratings Parameter Drain--Source Voltage Gate--Source Voltage Total Power Dissipation @ TC = 25 C Storage Temperature Junction Temperature Symbol VDSS VGS PD TSTG TJ Rating 65 20 206 -40 to +150 +200 Units Vdc Vdc W C C Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 0.85 Unit C/W NOTE--CAUTION--MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging MOS devices should be observed. RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary Characteristic DC CHARACTERISTICS @ 25C Drain-Source Breakdown Voltage (VGS = 0 Vdc, ID = 100 Adc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0) Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 A) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 700 mA) Drain-Source On-Voltage (VGS = 10 Vdc, ID = 1 A) Forward Transconductance (VGS = 10 Vdc, ID = 1 A) DYNAMIC CHARACTERISTICS @ 25C Output Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) Reverse Transfer Capacitance (VDS = 26 Vdc, VGS = 0, f = 1 MHz) RF FUNCTIONAL TESTS @ 25C (In M/A-COM Test Fixture) Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Input Return Loss (VDD = 26 Vdc, IDQ = 700 mA, f = 870 MHz, POUT = 90 W) Two-Tone Common Source Amplifier Gain (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Two-Tone Drain Efficiency (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Two-Tone Intermodulation Distortion (VDD = 26 Vdc, IDQ = 700 mA, f1 = 870.0MHz, f2 = 870.1MHz, POUT = 90 PEP) Output VSWR Tolerance (VDD = 26 Vdc, IDQ = 700 mA, f = 900 MHz, POUT = 90 W, VSWR = 10:1, All Phase Angles at Frequency of Tests) Symbol Min Typ Max Unit V(BR)DSS IDSS IGSS VGS(th) 65 -- -- 2 -- -- -- -- -- 1 3 4 Vdc Adc Adc Vdc VDS(Q) -- 4.0 -- Vdc VDS(on) Gm -- 0.20 -- Vdc -- 7 -- S Coss Crss -- -- 98 4.5 -- -- pF pF GP EFF () IRL GP -- -- -- -- 18 50 12 18 -- -- -- -- dB % dB dB EFF () -- 38 -- % IMD -- -30 -- dBc No Degradation In Output Power Before and After Test 2 RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary 20 19 18 70 60 50 40 30 Gain (26V) Gain (28V) Efficiency (26V) Efficiency (28V) 38 43 48 53 CW: f = 870MHz, VDD = 26/28V, IDQ=700mA 8 7 EDGE: 870MHz, VDD = 26/28V, IDQ=700mA Efficiency (%) 6 EVM(%) 5 4 3 2 1 0 38 40 42 44 46 48 POUT(dBm- Avg.) EVM (26volts) EVM (28volts) Gain(dB) 17 16 15 14 13 20 10 0 POUT(dBm- Avg.) Graph 1. CW Power Gain and Efficiency vs. Output Power Graph 2. EDGE RMS EVM vs. Output Power -20 -25 -30 -35 -40 -45 -50 -55 -60 -65 2-TONE: f = 870MHz, VDD = 26/28V, IDQ = 700mA IMD (dBc) IM3 (26V) IM3 (28V) 40 42 44 45 46 47 POUT (dBm - Avg.) Graph 3. Two-Tone Intermodulation vs. Output Power 3 RF Power LDMOS Transistor, 865-960 MHz, 90W, 26V MAPLST0810-90CF 5/14/04 Preliminary Package Dimensions Test Fixture Circuit Dimensions M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. 4 North America: Tel. (800) 366-2266 Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. |
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