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1.2W Power Amplifier 9.0-12.0 GHZ
Features
Variable Drain Voltage (4-10V) Operation MSAGTM Process High Performance Ceramic Bolt Down Package
MAAPGM0038
RO-P-DS-3060 E
Primary Applications
Point-to-Point Radio Weather Radar Airborne Radar
APGM0038 YWWXXX
Description
The MAAPGM0038 is a packaged, 3-stage, 1.2 W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM's repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM's MSAGTM process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging.
Pin Number 1 2 3 4 5 6 7 8 9 10
RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection
Maximum Operating Conditions 1
Parameter Input Power Drain Supply Voltage Gate Supply Voltage Quiescent Drain Current (No RF, 40% IDSS) Quiescent DC Power Dissipated (No RF) Junction Temperature Storage Temperature Processing Temperature 1. Operation outside of these ranges may reduce product reliability. 1
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
Symbol PIN VDD VGG IDQ PDISS TJ TSTG
Absolute Maximum 21.0 +12.0 -3.0 1.15 7.5 180 -55 to +150 230
Units dBm V V A W C C C
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
1.2W Power Amplifier 9.0-12.0 GHZ
Recommended Operating Conditions
Characteristic Drain Supply Voltage Gate Supply Voltage Input Power Junction Temperature Thermal Resistance Package Base Temperature Symbol VDD VGG PIN TJ JC TB 12.3 Note 2 Min 4.0 -2.4 Typ 8.0 -2.0 16.0 Max 10.0 -1.3 19.0 150
MAAPGM0038
RO-P-DS-3060 E
Unit V V dBm C C/W C
2. Maximum Package Base Temperature = 150C -- JC* VDD * IDQ
Electrical Characteristics: TB = 40C2, Z0 = 50 W, VDD = 8V, IDQ 710 mA3, Pin = 16 dBm, RG 100
Parameter Bandwidth Output Power Output Power @ 10.5 GHz Power Added Efficiency 1-dB Compression Point Small Signal Gain Small Signal Gain @ 10.5GHz Input VSWR Input VSWR @ 10.5 GHz Output VSWR Gate Supply Current Gate Supply Current @ 10.5 GHz Drain Supply Current Drain Supply Current @ 10.5 GHz Noise Figure 2 Harmonic 3 Harmonic Output Third Order Intercept 3 Order Intermodulation Distortion, Single Carrier Level = 21 dBm 5th Order Intermodulation Distortion, Single Carrier Level = 21 dBm
rd rd nd
Symbol f POUT POUT PAE P1dB G G VSWR VSWR VSWR IGG IGG IDD IDD NF 2f 3f OTOI IM3 IM5
Minimum -- 30.5 30.5 -- -- 19 19 -- 2.3* -- -10 -10 -- 0.7* -- -- -- -- -- --
Typical* 9-12 31.5 31.5 17 30 21 21 3 3 2.5:1 0 0 0.9 0.9 9 -20 -36 40 -13 -30
Maximum -- -- 32.5* -- -- -- 23* 5.8 5.8 -- 10 10 1.1 1.1 -- -- -- -- -- --
Units GHz dBm dBm % dBm dB dB -- -- -- mA mA A A dB dBc dBc dBm dBm dBm
3. Adjust VGG between -2.4 to -1.3V to achieve indicated IDQ. 4. *Not screened-shown to indicate range of expected values.
Operating Instructions This device is static sensitive. Please handle with care. To operate the device, follow these steps. 1. Apply VGG -1.7V, VDD= 0 V. 2. Ramp VDD to desired voltage, typically 8 V. 3. Adjust VGG to set IDQ, (See Note 3 above). 4. Set RF input. 5. Power down sequence in reverse. Turn VGG off last.
2
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
1.2W Power Amplifier 9.0-12.0 GHZ
MAAPGM0038
RO-P-DS-3060 E
50 POUT PAE 40
50
50 VDD = 4 VDD = 6 VDD = 8 VDD = 10
40
40
POUT (dBm)
P1dB (dBm)
PAE(%)
30
30
30
20
20
20
10
10
10
0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0
0 12.5
0 8.5 9.0 9.5 10.0 10.5 11.0 11.5 12.0 12.5
Frequency (GHz)
Figure 1. Output Power and Power Added Efficiency vs. Frequency at VDD = 8V and Pin = 16 dBm
Frequency (GHz) Figure 2. 1dB Compression Point vs. Drain Voltage
50
1.2
40
1.0
0.8
POUT (dBm)
30
IDS (A)
0.6 9.0 GHz 10.5 GHz 12.0 GHz
20
9.0 GHz 10.5 GHz 0.4
10
12.0 GHz 0.2
0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
0.0 -10 -8 -6 -4 -2 0 2 4 6 8 10 12 14 16 18 20
PIN (dBm) Figure 3. Output Power vs. Input Power at VDD = 8V
Frequency (GHz) Figure 4. Drain Current vs. Input Power at VDD = 8V
50 POUT PAE 40
50
40 Gain Input VSWR
6
40
32
Output VSWR
5
POUT (dBm)
Gain (dB)
PAE(%)
30
30
24
4
20
20
16
3
10
10
8
2
0 4 5 6 7 8 9 10
0
0 8.5 9.5 10.5 Frequency (GHz) 11.5
1 12.5
Drain Voltage (volts)
Figure 5. Saturated Output Power and Power Added Efficiency vs. Drain Voltage at fo = 10.5 GHz
Figure 6. Small Signal Gain and VSWR vs. Frequency at VDD = 8V.
3
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
VSWR
1.2W Power Amplifier 9.0-12.0 GHZ
MAAPGM0038
RO-P-DS-3060 E
APGM0038
Figure 5. CR-15 Package Dimensions
The CR-15 is a high frequency, low thermal resistance package. The package consists of a cofired ceramic construction with a copper-tungsten base and iron-nickel-cobalt leads. The finish consists of electrolytic gold over nickel plate.
4
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.
1.2W Power Amplifier 9.0-12.0 GHZ
Figure 6. Recommended Bias Configuration
MAAPGM0038
RO-P-DS-3060 E
RG
(See Electrical Characteristics - Page 2)
VGG 0.1 F 0.1 F
VDD
100 pF
100 pF
APGM0038 YWWXXX
RFIN
RFOUT
100 pF
100 pF
Pin Number 1 2 3 4 5 6 7 8 9 10
RF Designator No Connection VGG RF IN VGG No Connection No Connection VDD RF OUT VDD No Connection
Assembly Instructions:
This flange mount style package provides a robust interface between a highly integrated GaAs MMIC device and a circuit board which may be assembled using conventional surface mount techniques. A thin shim made of a thermally and electrically conductive, ductile material should be used prior to installation of the CR-15 to improve the thermal and electrical performance of the package to housing interface. Refer to M/A-COM Application Note #M567* for more information . For applications where surface mount components are to be installed after the CR-15 installation, this package will not be damaged when subjected to typical convection or IR oven reflow profiles. Refer to M/A-COM Application Note #M538* for maximum allowable reflow time and temperature. Alternatively, the package leads may be individually soldered. Whether an iron or hot gas soldering equipment is used, care should be taken to insure that the temperature is well controlled and electric static discharge (ESD) safe. * Application Notes can be found by going to the Site Search Page on M/A-COM's web page (http://www.macom.com/search/search.jsp) and searching for the required Application Note.
Biasing Notes:

5
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information.
The 100pF bypass capacitors must be placed as close to the VGG and VDD pins as possible (recommended < 100 mils). A negative bias must be applied to VGG before applying a positive bias to VDD to prevent damage to the amplifier.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information.

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