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DIM200PHM33-A000
DIM200PHM33-A000
Half Bridge IGBT Module Preliminary Information
Replaces August 2001, version DS5464-3.0 DS5464-4.0 October 2001
FEATURES
s s s s
KEY PARAMETERS VCES VCE(sat) IC IC(PK) (typ) (max) (max) 3300V 3.2V 200A 400A
10s Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated MMC Base with AlN Substrates
APPLICATIONS
s s s
1(E1/C2) 2(C1) 5(E1) 4(G1) 3(E2) 7(E2) 6(G2)
High Reliability Inverters Motor Controllers Traction Drives
The Powerline range of high power modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The DIM200PHM33-A000 is a half bridge 3300V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. The IGBT has a wide reverse bias safe operating area (RBSOA) plus full 10s short circuit withstand. This device is optimised for traction drives and other applications requiring high thermal cycling capability. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise grounded heat sinks for safety.
8(C1)
Fig. 1 Half bridge circuit diagram
ORDERING INFORMATION
Order As: DIM200PHM33-A000 Note: When ordering, please use the whole part number.
Outline type code: P (See package details for further information) Fig. 2 Electrical connections - (not to scale)
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax I2t Visol QPD Parameter Collector-emitter voltage Gate-emitter voltage Continuous collector current Peak collector current Max. transistor power dissipation Diode I2t value (Diode arm) Isolation voltage - per module Partial discharge - per module Tcase = 80C 1ms, Tcase = 115C Tcase = 25C, Tj = 150C VR = 0, tp = 10ms, Tvj = 125C Commoned terminals to base plate. AC RMS, 1 min, 50Hz IEC1287. V1 = 2450V, V2 = 1800V, 50Hz RMS VGE = 0V Test Conditions Max. 3300 20 200 400 2315 20 6000 10 Units V V A A W kA2s V pC
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
THERMAL AND MECHANICAL RATINGS
Internal insulation material: Baseplate material: Creepage distance: Clearance: CTI (Critical Tracking Index): Symbol Rth(j-c) AlN AlSiC 33mm 20mm 175 Parameter Thermal resistance - transistor (per switch) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per switch) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Tj Junction temperature Mounting torque 5Nm (with mounting grease) Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 Electrical connections - M5 -40 150 125 125 5 4 C C C Nm Nm 16 C/kW 108 C/kW Min. Typ. Max. 54 Units C/kW
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC =20mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, , Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C Cies Cres LM RINT SCData Input capacitance Reverse transfer capacitance Module inductance - per switch Internal transistor resistance - per switch Short circuit. ISC VCE = 25V, VGE = 0V, f = 1MHz VCE = 25V, VGE = 0V, f = 1MHz Tj = 125C, VCC = 2500V, tp 10s, VCE(max) = VCES - L*. di/dt IEC 60747-9 I1 I2 Min. 4.5 Typ. 5.5 3.2 4.0 200 400 2.5 2.5 45 2.5 30 0.54 1300 1100 Max. 1 15 2 6.5 Units mA mA A V V V A A V V nF nF nH m A A
Note: L* is the circuit inductance + LM
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
ELECTRICAL CHARACTERISTICS
Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qg Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Gate charge Diode reverse recovery charge Diode reverse current Diode reverse recovery energy IF = 200A, VR = 1800V, dIF/dt = 1100A/s Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =10 Cge = 33nF L ~ 100nH Min. Typ. 1300 200 170 640 250 290 6 115 165 130 Max. Units ns ns mJ ns ns mJ C C A mJ
Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Irr EREC Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge Diode reverse current Diode reverse recovery energy Test Conditions IC = 200A VGE = 15V VCE = 1800V RG(ON) = RG(OFF) =10 Cge = 33nF L ~ 100nH IF = 200A, VR = 1800V, dIF/dt = 1000A/s Min. Typ. 1600 250 240 640 300 420 190 185 220 Max. Units ns ns mJ ns ns mJ C A mJ
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
TYPICAL CHARACTERISTICS
400
Common emitter. Tcase = 25C
400 Common emitter. Tcase = 125C
300
300
Collector current, IC - (A)
200
100 VGE = 20V 15V 12V 10V 0 0 1 2 3 4 5 6
Collector current, IC - (A)
200
100 VGE = 20V 15V 12V 10V 0 1 2 3 4 5 6 7 8
Collector-emitter voltage, Vce - (V)
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
500
700
Conditions: Tc = 125C, Rg = 10 Ohms, Vcc = 1800V, 400 Cge = 33nF
Conditions: Tc = 125C I = 200A 600 C Vcc = 1800V Cge = 33nF
Switching energy, Esw - (mJ) Eon Eoff Erec
Switching energy, Esw - (mJ)
500
300
400
300
200
200
100
100
Eon Eoff Erec 10 15 20 25 30
0 0 50 100 150 Collector current, IC - (A)
200
0 5
Gate resistance, Rg - (Ohms)
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
400 Tj = 25C Tj = 125C 350
500
400
300
Collector current, IC - (A)
Forward current, IF - (A)
Chip 300 Module 200
250
200
150
100
100
50
Tcase = 125C Vge = 15V Rg(min) = 10 0
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
0 Forward voltage, VF - (V)
0
500
1000
1500
2000
2500
3000
3500
Collector emitter voltage, Vce - (V)
Fig. 7 Diode typical forward characteristics
Fig. 8 Reverse bias safe operating area
400
1000
Tj = 125C
350
Reverse recovery current, Irr - (A)
300 250
100
Collector current, IC - (A)
tp
tp =
=
50
s
IC(max) DC 10
tp =
0 10 s
200 150 100 50 0 0
1 s m
1
500
1000 1500 2000 2500 Reverse voltage, VR - (V)
3000
3500
0.1 1
Tvj = 125C, Tc = 80C 10 100 1000 Collector emitter voltage, Vce (V) 10000
Fig. 9 Diode reverse bias safe operating area
Fig. 10 Forward bias safe operating area
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
1000
Transient thermal impedance, Zth (j-c) - (C/kW )
350
300
DC collector current, IC - (A) 10
Diode Transistor
250
100
200
150
10 1 2 3 1.4989 7.8608 11.1109 0.0876 3.7713 33.5693 2.9545 15.6459 22.2515 0.0843 3.7205 33.2138 1 4 33.6178 236.8023 67.3233 236.5275
100
IGBT Diode 1 0.001
Ri (C/KW) i (ms) Ri (C/KW) i (ms) 0.01
50
0.1 Pulse width, tp - (s)
0 0
20
40 60 80 100 120 Case temperature, Tcase - (C)
140
160
Fig. 11 Transient thermal impedance
Fig. 12 DC current rating vs case temperature
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
PACKAGE DETAILS
For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE.
Nominal weight: 750g Module outline type code: P
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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DIM200PHM33-A000
POWER ASSEMBLY CAPABILITY
The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs).
HEATSINKS
The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office.
http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com
HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontario, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 SALES OFFICES Mainland Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 502901 / 502753. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5464-4 Issue No. 4.0 August 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM
Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification.
This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners.
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Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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