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AO4806 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AO4806 is Pb-free (meets ROHS & Sony 259 specifications). AO4806L is a Green Product ordering option. AO4806 and AO4806L are electrically identical.
D1 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1
Features
VDS (V) = 20V ID = 9.4A (VGS = 10V) RDS(ON) < 14m (VGS = 10V) RDS(ON) < 15m (VGS = 4.5V) RDS(ON) < 21m (VGS = 2.5V) RDS(ON) < 30m (VGS = 1.8V) ESD Rating: 2000V HBM
D2
G1 S1
G2 S2
SOIC-8
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation
B
Maximum 20 12 9.4 7.5 40 2 1.28 -55 to 150
Units V V A
VGS TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG
W C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 45 72 34
Max 62.5 110 40
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AO4806
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=16V, VGS=0V TJ=55C VDS=0V, VGS=10V VDS=0V, IG=250uA VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=9.4A TJ=125C RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=8A VGS=2.5V, ID=6A VGS=1.8V, ID=4A gFS VSD IS Forward Transconductance VDS=5V, ID=9.4A Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current 12 0.5 30 11 14.3 12.6 16.5 23.4 37 0.72 1 3 1810 VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz 232 200 1.6 17.9 VGS=4.5V, VDS=10V, ID=9.4A 1.5 4.7 3.3 VGS=10V, VDS=10V, RL=1.1, RGEN=3 IF=9.4A, dI/dt=100A/s 5.9 44 7.7 22 8.6 14 17 16 22 30 0.75 1 Min 20 10 25 10 Typ Max Units V A A V V A m m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS BVGSO VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Source leakage current Gate-Source Breakdown Voltage Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd tD(on) tr tD(off) tf trr Qrr Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=9.4A, dI/dt=100A/s
2
A: The value of R JA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40 10V 2.5V 30 4.5V 2V 20 16 12 20 ID(A) 8 10 VGS=1.5V 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 40 VGS=1.8V Normalized On-Resistance 1.6 VGS=2.5V,6A 1.4 VGS=4.5V, 8A 4 0 0 0.5 1.5 2 2.5 VGS(Volts) Figure 2: Transfer Characteristics 1 3 125C 25C VDS=5V
ID (A) RDS(ON) (m)
30
20
VGS=2.5V VGS=4.5V
1.2
VGS=1.8V, 4A VGS=10V, 9.4A
10 VGS=10V 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 40
1
0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00
30 RDS(ON) (m)
ID=6A 1.0E-01 IS (A)
125C
20
125C
1.0E-02 1.0E-03 1.0E-04 25C
10
25C
0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AO4806 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5 4 VGS (Volts) 3 2 1 400 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 0 5 10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics 2800 VDS=10V ID=9.4A Capacitance (pF) 2400 2000 1600 1200 800 Coss Ciss
Crss
100.0 10s 10.0 ID (Amps) RDS(ON) limited 100s 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC Power (W) 1ms
40
TJ(Max)=150C TA=25C
30
20
10
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
10 ZJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.

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