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2SC5124 Silicon NPN Triple Diffused Planar Transistor (High Voltage Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 1500 800 6 10(Pulse20) 5 100(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Display Horizontal Deflection Output, Switching Regulator and General Purpose (Ta=25C) Ratings 100max 1max 100max 800min 8min 4 to 9 5max 1.5max 3typ 130typ Unit A mA A V sElectrical Characteristics Symbol ICBO1 ICBO2 IEBO V(BR)CEO hFE1 hFE2 VCE(sat) VBE(sat) fT COB Conditions VCB=1200V VCB=1500V VEB=6V IC=10mA VCE=5V, IC=1A VCE=5V, IC=8A IC=8A, IB=2A IC=8A, IB=2A VCE=12V, IE=-1A VCB=10V, f=1MHz External Dimensions FM100(TO3PF) 0.80.2 15.60.2 5.50.2 3.45 0.2 5.5 o3.30.2 1.6 23.00.3 9.50.2 a b V V MHz pF 19.1 16.2 1.75 2.15 1.05 +0.2 -0.1 5.450.1 5.450.1 4.4 1.5 0.65 +0.2 -0.1 3.3 0.8 3.35 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 33.3 IC (A) 6 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 1.2 IB2 (A) -2.4 ton (s) 0.1typ tstg (s) 4.0typ tf (s) 0.2typ 1.5 B C E Weight : Approx 6.5g a. Part No. b. Lot No. IC - VCE Characteristics (Typical) 2.4 A VCE(sat)-IC Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 I C /I B= 5:1 Collector Current I C( A) IC - V BE Temperature Characteristics (Typical) 10 (V C E= 5V) 10 1. 8A 8 Collector Current I C( A) 8 1. 2A 2 6 700 mA 6 4 300 mA 4 1 2 IB=100m A 2 0 0 1 2 3 4 0 0.02 0.05 0.1 0.5 1 5 10 0 0 0.5 Base-Emittor Voltage V B E( V) 1.0 Collector-Emitter Voltage V C E( V) Collector Current I C( A) h FE - IC Characteristics (Typical) (VCE=5V) 40 DC Curr ent Gain h FE t stg *t f - I C Characteristics (Typical) 10 j-a - t Characteristics t o n*t s tg *t f( s) 125C 25C 5 V C C 200V IC:I B 1: -IB2=5:1:2 1 0.5 tf 0.1 0.2 t s tg 10 -55C 5 3 0.02 Switching Ti me 0.1 0.5 1 5 10 0.5 1 Collector Current I C (A) 5 10 Collector Current I C( A) Safe Operating Area (Single Pulse) 30 30 Reverse Bias Safe Operating Area 100 P c - T a Derating 10 Collector Curre nt I C( A) 5 10 Co lle ctor Cu rre nt I C( A) 5 Maximu m Power Dissipa tion P C( W) 50 1 0.5 1 0.5 Without Heatsink Natural Cooling L=3mH -IB2=1A Duty:less than 1% 0.1 5 10 50 100 500 1000 Collector-Emitter Voltage V C E( V) 0.1 50 100 500 1000 2000 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 3.0 10 0 s W ith In fin ite he at si nk 129 This datasheet has been download from: www..com Datasheets for electronics components. |
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