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| SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) 0.058 @ VGS = 10 V 0.062 @ VGS = 6 V ID (A) 45 43 D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package APPLICATIONS D Primary Side Switch D Plasma Display Panel Sustainer Function D TO-263 G G DS S Top View Ordering Information: SUM45N25-58N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energya Maximum Power Dissipationa Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TA = 25_Cc TC = 25_C TC = 125_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit 250 "30 45 25 70 35 61 375b 3.75 - 55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient (PCB Junction-to-Case (Drain) Notes a. Duty cycle v 1%. b. See SOA curve for voltage derating. c. When mounted on 1" square PCB (FR-4 material). Document Number: 72314 S-31515--Rev. A, 14-Jul-03 www.vishay.com Mount)c Symbol RthJA RthJC Limit 40 0.4 Unit _C/W 1 SUM45N25-58 Vishay Siliconix New Product SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VDS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "30 V VDS = 200 V, VGS = 0 V Zero Gate Voltage Drain Current g IDSS VDS = 200 V, VGS = 0 V, TJ = 125_C VDS = 200 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS w 5 V, VGS = 10 V VGS = 10 V, ID = 20 A Drain-Source On-State Drain Source On State Resistancea VGS = 10 V, ID = 20 A, TJ = 125_C rDS( ) DS(on) VGS = 10 V, ID = 20 A, TJ = 175_C VGS = 6 V, ID = 15 A, Forward Transconductancea gfs VDS = 15 V, ID = 20 A 0.049 70 70 0.047 0.058 0.121 0.163 0.062 S W 250 V 2 4 "250 1 50 250 A m mA nA Symbol Test Condition Min Typ Max Unit Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr Timec td(off) tf VDD = 100 V, RL = 2.78 W ID ^ 45 A, VGEN = 10 V, RG = 2.5 W f = 1 MHz VDS = 125 V, VGS = 10 V, ID = 45 A , , VGS = 0 V, VDS = 25 V, f = 1 MHz 5000 300 170 95 28 34 1.6 22 220 40 145 35 330 60 220 ns W 140 nC pF Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge IS ISM VSD trr IRM(REC) Qrr IF = 45 A, di/dt = 100 A/ms , m IF = 45 A, VGS = 0 V 1.0 150 12 0.9 45 70 1.5 225 18 2 A V ns A mC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com 2 Document Number: 72314 S-31515--Rev. A, 14-Jul-03 SUM45N25-58 New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 100 VGS = 10 thru 7 V 80 I D - Drain Current (A) I D - Drain Current (A) 6V 80 100 Vishay Siliconix Transfer Characteristics 60 60 40 40 TC = 125_C 20 25_C - 55_C 0 20 5V 4V 0 0 2 4 6 8 10 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 150 TC = - 55_C 25_C 90 125_C 60 r DS(on) - On-Resistance ( W ) 120 g fs - Transconductance (S) 0.08 0.10 On-Resistance vs. Drain Current 0.06 VGS = 6 V VGS = 10 V 0.04 30 0.02 0 0 10 20 30 40 50 60 0.00 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 7000 6000 Ciss C - Capacitance (pF) 5000 4000 3000 2000 1000 0 0 40 80 120 160 200 Crss 20 Gate Charge V GS - Gate-to-Source Voltage (V) 16 VDS = 125 V ID = 45 A 12 8 4 Coss 0 0 30 60 90 120 150 180 VDS - Drain-to-Source Voltage (V) Document Number: 72314 S-31515--Rev. A, 14-Jul-03 Qg - Total Gate Charge (nC) www.vishay.com 3 SUM45N25-58 Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.8 VGS = 10 V ID = 20 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.4 r DS(on) - On-Resistance (W) (Normalized) 2.0 TJ = 150_C 10 TJ = 25_C 1.6 1.2 0.8 0.4 - 50 - 25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) Avalanche Current vs. Time 100 300 290 Drain Source Breakdown vs. Junction Temperature ID = 1.0 mA 10 I Dav (a) IAV (A) @ TA = 25_C V (BR)DSS (V) 280 270 260 1 250 240 IAV (A) @ TA = 150_C 0.1 0.00001 0.0001 0.001 0.01 0.1 1 230 - 50 - 25 0 25 50 75 100 125 150 175 tin (Sec) TJ - Junction Temperature (_C) www.vishay.com 4 Document Number: 72314 S-31515--Rev. A, 14-Jul-03 SUM45N25-58 New Product THERMAL RATINGS Vishay Siliconix Maximum Avalanche and Drain Current vs. Case Temperature 50 100 Safe Operating Area, Case Temperature 10 ms Limited by rDS(on) I D - Drain Current (A) 10 40 I D - Drain Current (A) 100 ms 30 1 ms 10 ms 1 TC = 25_C Single Pulse 100 ms dc 20 10 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (_C) VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (sec) 10 -1 1 Document Number: 72314 S-31515--Rev. A, 14-Jul-03 www.vishay.com 5 |
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