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BUP 603D
IGBT With Antiparallel Diode
Preliminary data
* Low forward voltage drop * High switching speed * Low tail current * Latch-up free * Including fast free-wheel diode Pin 1 G Type BUP 603D Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 600 600 Unit V Pin 2 C Ordering Code Q67040-A4230-A2 Pin 3 E
VCE
600V
IC
42A
Package TO-218 AB
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current, (limited by bond wire)
20 A 42 32
TC = 60 C TC = 90 C
Pulsed collector current, tp = 1 ms
ICpuls
104 64
TC = 25 C TC = 90 C
Diode forward current
IF
31
TC = 90 C
Pulsed diode current, tp = 1 ms
IFpuls
180
TC = 25 C
Power dissipation
Ptot
200
W - 55 ... + 150 - 55 ... + 150 C
TC = 25 C
Chip or operating temperature Storage temperature
Tj Tstg
Semiconductor Group
1
Dec-02-1996
BUP 603D
Maximum Ratings Parameter DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Thermal Resistance Thermal resistance, chip case Diode thermal resistance, chip case Symbol Values E 55 / 150 / 56 Unit -
RthJC RthJCD
0.63 1
K/W
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.1 2.2 3 3.3 6.5 2.7 2.8 -
V
VGE = VCE, IC = 0.7 mA, Tj = 25 C
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 30 A, Tj = 25 C VGE = 15 V, IC = 30 A, Tj = 125 C VGE = 15 V, IC = 60 A, Tj = 25 C VGE = 15 V, IC = 60 A, Tj = 125 C
Zero gate voltage collector current
ICES
300
A nA 100
VCE = 600 V, VGE = 0 V, Tj = 25 C
Gate-emitter leakage current
IGES
VGE = 25 V, VCE = 0 V
AC Characteristics Transconductance
gfs
6 1600 170 100 -
S pF 2150 260 150
VCE = 20 V, IC = 30 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Dec-02-1996
BUP 603D
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) Values typ. max. Unit
ns 50 75
VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33
Rise time -
tr
80 120
VCC = 300 V, VGE = 15 V, IC = 30 A RGon = 33
Turn-off delay time
td(off)
250 340
VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33
Fall time
tf
500 700
VCC = 300 V, VGE = -15 V, IC = 30 A RGoff = 33
Free-Wheel Diode Diode forward voltage
VF
1.8 1.6 -
V
IF = 20 A, VGE = 0 V, Tj = 25 C IF = 20 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
110 160
ns
IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s, Tj = 25 C
Reverse recovery charge
Qrr
C
IF = 20 A, VR = -300 V, VGE = 0 V diF/dt = -300 A/s Tj = 25 C Tj = 125 C
0.6 1.3 1.1 2.4
Semiconductor Group
3
Dec-02-1996
BUP 603D
Power dissipation Ptot = (TC) parameter: Tj 150 C
220 W
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
55 A
Ptot
180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 C 160
IC
45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160
TC
TC
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
A K/W
IC
10 2
t = 12.0s p
ZthJC
10 -1
100 s
10 1 D = 0.50 0.20
1 ms
10 -2
0.10 0.05
10 0
10 ms
single pulse DC 10 -1 0 10 10 -3 -5 10
0.02 0.01
10
1
10
2
V 10
3
10
-4
10
-3
10
-2
10
-1
s 10
0
VCE
tp
Semiconductor Group
4
Dec-02-1996
BUP 603D
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
60 A 50 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
60 A 50 17V 15V 13V 11V 9V 7V
IC
45 40 35 30 25 20 15 10 5 0 0
IC
45 40 35 30 25 20 15 10 5 0
1
2
3
V
5
0
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
60 A 50
IC
45 40 35 30 25 20 15 10 5 0 0 2 4 6 8 10 V 14 VGE
Semiconductor Group
5
Dec-02-1996
BUP 603D
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, RG = 33
10 3 tf t
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, IC = 30 A
10 3 tf tdoff t ns
ns tdoff
tr 10 2 10
2
tr tdon
tdon
10 1 0
10
20
30
40
50
60
A IC
80
10 1 0
20
40
60
80
120
RG
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 300 V, VGE = 15 V, RG = 33
10 mWs E 8 7 6 Eoff 5 4 3 2 1 0 0 10 20 30 40 50 60 A IC 80 Eon
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 300V, VGE = 15 V, IC = 30 A
5.0 mWs E 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0 20 40 60 80 Eoff Eon
120
RG
Semiconductor Group
6
Dec-02-1996
BUP 603D
Typ. gate charge VGE = (QGate) parameter: IC puls = 30 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
100 V
300 V
Ciss 10 0
Coss 10 -1 Crss
6 4 2 0 0 20 40 60 80 100 nC 130 10 -2 0
5
10
15
20
25
30
Q Gate
V 40 VCE
Short circuit safe operating area
Reverse biased safe operating area
ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 50 nH
10
ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V
2.5
I Csc/I C(90C)
ICpuls /IC
6
1.5
4
1.0
2
0.5
0 0 100 200 300 400 500 600 V 800 VCE
0.0 0 100 200 300 400 500 600 V 800 VCE
Semiconductor Group
7
Dec-02-1996
BUP 603D
Typ. forward characteristics
IF = f (VF)
parameter: Tj
40
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 1 K/W
Diode
A
IF
30
ZthJC
10 0
25
Tj=125C
Tj=25C
10 -1
20 10 15
-2
D = 0.50 0.20 0.10 0.05
10 10 -3 5 0 0.0 0.5 1.0 1.5 2.0 V 3.0 10 -4 -5 10 single pulse
0.02 0.01
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Dec-02-1996

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