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LESHAN RADIO COMPANY, LTD.
2-Input NOR Gate
MC74VHC1G02
The MC74VHC1G02 is an advanced high speed CMOS 2-input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer output which provides high noise immunity and stable output. The MC74VHC1G02 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the MC74VHC1G02 to be used to interface 5 V circuits to 3 V circuits. * High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V * Low Power Dissipation: I CC = 2 mA (Max) at T A = 25C * Power Down Protection Provided on Inputs * Balanced Propagation Delays * Pin and Function Compatible with Other Standard Logic Families * Chip Complexity: FETs = 56; Equivalent Gates = 14
MARKING DIAGRAMS
5 4 1 2 3
V3d
SC-88A / SOT-353/SC-70 DF SUFFIX CASE 419A
Pin 1 d = Date Code
5 4
Figure 1. Pinout (Top View)
1 2 3
V3d
Figure 2. Logic Symbol
Pin 1 d = Date Code
TSOP-5/SOT-23/SC-59 DT SUFFIX CASE 483
FUNCTION TABLE
PIN ASSIGNMENT 1 2 3 4 5 IN B IN A GND OUT Y V CC A L L H H Inputs B L H L H Output Y H L L L
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet.
VH2-1/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G02
MAXIMUM RATINGS
Value Unit - 0.5 to + 7.0 V - 0.5 to 7.0 V V CC=0 - 0.5 to 7.0 V High or Low State -0.5 to V cc + 0.5 I IK Input Diode Current -20 mA I OK Output Diode Current V OUT < GND; V OUT > V CC +20 mA I OUT DC Output Current, per Pin + 25 mA I CC DC Supply Current, V CC and GND +50 mA PD Power dissipation in still air SC-88A, TSOP-5 200 mW JA Thermal resistance SC-88A, TSOP-5 333 C/W TL Lead Temperature, 1 mm from Case for 10 s 260 C TJ Junction Temperature Under Bias + 150 C T stg Storage temperature -65 to +150 C V ESD ESD Withstand Voltage Human Body Model (Note 2) >2000 V Machine Model (Note 3) > 200 Charged Device Model (Note 4) N/A Latch-Up Performance Above V CC and Below GND at 125C (Note 5) 500 mA I LATCH-UP 1. Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those indicated may adversely affect device reliability. Functional operation under absolute-maximum-rated conditions is not implied. Functional operation should be restricted to the Recommended Operating Conditions. 2. Tested to EIA/JESD22-A114-A 3. Tested to EIA/JESD22-A115-A 4. Tested to JESD22-C101-A 5. Tested to EIA/JESD78 DC Supply Voltage DC Input Voltage DC Output Voltage RECOMMENDED OPERATING CONDITIONS Symbol Parameter V CC DC Supply Voltage V IN DC Input Voltage V OUT DC Output Voltage TA Operating Temperature Range t r ,t f Input Rise and Fall Time Symbol V CC V IN V OUT Parameter
V CC = 3.3 0.3 V V CC = 5.0 0.5 V
Min 2.0 0.0 0.0 - 55 0 0
Max 5.5 5.5 V CC + 125 100 20
Unit V V V C ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME TO 0.1% BOND FAILURES
NORMALIZED FAILURE RATE
Junction Temperature C 80 90 100 110 120 130 140
Time, Hours 1,032,200 419,300 178,700 79,600 37,000 17,800 8,900
Time, Years 117.8 47.9 20.4 9.4 4.2 2.0 1.0
1
1
10
100
1000
TIME, YEARS
Figure 3. Failure Rate vs. Time Junction Temperature
VH2-2/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G02
DC ELECTRICAL CHARACTERISTICS V Symbol V IH Parameter Minimum High-Level Input Voltage Test Conditions
CC
T A = 25C Min 1.5 2.1 3.15 3.85 0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.58 3.94 0.0 0.0 0.0 0.1 0.1 0.1 0.36 0.36
0.1
T A < 85C -55C1.0
(V) 2.0 3.0 4.5 5.5 2.0 3.0 4.5
Typ
Max
Max
Min 1.5 2.1 3.15 3.85
Max
Unit V
V IL
Maximum Low-Level Input Voltage
0.5 0.9 1.35 1.65 1.9 2.9 4.4 2.34 3.66 0.1 0.1 0.1 0.52 0.52
1.0
V
V OH
Minimum High-Level Output Voltage V IN = V IH or V IL
V IN = V IH or V IL I OH = - 50 A V IN = V IH or V IL I OH = -4 mA
5.5 2.0 3.0 4.5 3.0 4.5 2.0 3.0 4.5 3.0 4.5 0 to5.5 5.5
2.0 3.0 4.0
V
V OL
Maximum Low-Level Output Voltage V IN = V IH or V IL
I OH = -8 mA V IN = V IH or V IL I OL = 50 A V IN = V IH or V IL I OL = 4 mA
V
I IN I CC
Maximum Input Leakage Current Maximum Quiescent Supply Current
I OL = 8 mA V IN = 5.5 V or GND V IN = V CC or GND
A A
2.0
20
40
AC ELECTRICAL CHARACTERISTICS C load = 50 pF, Input t r = t f = 3.0 ns T A = 25C Symbol Parameter t PLH , Maximum t PHL Propagation Delay, Input A or B to Y Test Conditions V CC = 3.3 0.3 V C L = 15 pF C L = 50 pF V CC = 5.0 0.5 V C L = 15 pF C L = 50 pF C IN Maximum Input Capacitance Power Dissipation Capacitance (Note 6) Min Typ 4.0 5.4 3.0 3.8 5.5 Max 7.9 11.4 5.5 7.5 10
T A < 85C -55CC PD
Typical @ 25C, V CC = 5.0 V 11
pF
6. C PD is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load. Average operating current can be obtained by the equation: I CC(OPR) = C PD * V CC * f in + I CC . C PD is used to determine the no- load dynamic power consumption; P D = C PD * V CC 2 * f in + I CC * V CC .
VH2-3/4
LESHAN RADIO COMPANY, LTD.
MC74VHC1G02
Figure 4. Switching Waveforms
*Includes all probe and jig capacitance
Figure 5. Test Circuit DEVICE ORDERING INFORMATION Device Nomenclature
Device Order Number Temp Circuit Device Range Technology Indicator Function Identifier MC MC MC MC MC 74 74 74 74 74 VHC1G VHC1G VHC1G VHC1G VHC1G 04 04 04 04 04 Package Suffix DF DF DF DT DT Tape & Reel Suffix T1 T2 T4 T1 T3 Package Type (Name/SOT#/ Common Name) Tape and Reel Size
MC74VHC1G04DFT1 MC74VHC1G04DFT2 MC74VHC1G04DFT4 MC74VHC1G04DTT1 MC74VHC1G04DTT3
SC-70/SC-88A/ SOT-353 SC-70/SC-88A/ SOT-353 SC-70/SC-88A/ SOT-353 SOT-23/TSOPS/ SC-59 SOT-23/TSOPS/ SC-59
178 mm (7 in) 3000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit 178 mm (7 in) 3000 Unit 330 mm (13 in) 10,000 Unit
VH2-4/4

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