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Power Transistors
2SD1719
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio Features
* High forward current transfer ratio hFE which has satisfactory linearity * High emitter-base voltage (Collector open) VEBO * N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electronic equipment.
10.00.3 1.50.1
Unit: mm
8.50.2 6.00.2 3.40.3 1.00.1
4.40.5
Absolute Maximum Ratings TC = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25C Junction temperature Storage temperature Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 100 60 15 6 12 3 40 1.3 150 -55 to +150 C C Unit V V V A A A W
(6.5)
1: Base 2: Collector 3: Emitter N-G1 Package
Note) Self-supported type package is also prepared.
Electrical Characteristics TC = 25C 3C
Parameter Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Emitter-base cutoff current (Collector open) Forward current transfer ratio * Collector-emitter saturation voltage Transition frequency Turn-on time Strage time Fall time Symbol VCEO ICBO IEBO hFE VCE(sat) fT ton tstg tf Conditions IC = 25 mA, IB = 0 VCB = 100 V, IE = 0 VEB = 15 V, IC = 0 VCE = 4 V, IC = 1 A IC = 5 A, IB = 0.1 A VCE = 12 V, IC = 0.5 A, f = 10 MHz IC = 5 A IB1 = 0.1 A, IB2 = - 0.1 A VCC = 50 V 30 0.3 1.5 0.6 300 Min 60 100 100 2 000 0.5 Typ Max Unit V A A V MHz s s s
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Rank classification Rank hFE Q 300 to 1200 P 800 to 2 000
(7.6)
(1.5)
1
2
0.80.1 R = 0.5 R = 0.5 2.540.3 1.00.1 1.40.1 0.40.1 5.080.5 (8.5) (6.0) 1.3 3
2.00.5
4.40.5
0 to 0.4
14.40.5
3.0+0.4 -0.2
1.5+0 -0.4
Publication date: April 2003
SJD00212AED
1
2SD1719
PC Ta
80
(1)TC=Ta (2)With a 50x50x2mm Al heat sink (3)Without heat sink (PC=1.3W)
IC VCE
Collector-emitter saturation voltage VCE(sat) (V)
6
TC=25C
VCE(sat) IC
10
IC/IB=50
Collector power dissipation PC (W)
5
Collector current IC (A)
60
IB=10mA
4
9mA 8mA 7mA 6mA 5mA
1
TC=100C 25C -25C
40
(1)
3
2
4mA 3mA 2mA
0.1
20
(3)
1
(2)
1mA
0
0
0
40
80
120
160
0
2
4
6
8
10
12
0.01 0.1
1
10
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (A)
VBE(sat) IC
10
105
IC/IB=50
hFE IC
VCE=4V
fT I C
1000
VCE=12V f=10MHz TC=25C
Base-emitter saturation voltage VBE(sat) (V)
Forward current transfer ratio hFE
104
Transition frequency fT (MHz)
1 10
100
1
TC=-25C
TC=100C
100C
25C
10
3
25C -25C
10
0.1
102
1
0.01 0.01
1
10
10 0.01
0.1
0.1 0.01
0.1
1
10
Collector current IC (A)
Collector current IC (A)
Collector current IC (A)
Cob VCB
Turn-on time ton , Storage time tstg , Fall time tf (s)
Collector output capacitance C (pF) (Common base, input open circuited) ob
104
IE=0 f=1MHz TC=25C
ton, tstg, tf IC
100
Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=-IB2) VCC=50V TC=25C tstg
Safe operation area
100
Non repetitive pulse TC=25C ICP
Collector current IC (A)
103
10
10
IC
t=1ms t=10ms
102
1
ton
tf
1
t=300ms
10
0.1
0.1
1 0.1
1
10
100
0.01
0.01
0
2
4
6
8
1
10
100
1000
Collector-base voltage VCB (V)
Collector current IC (A)
Collector-emitter voltage VCE (V)
2
SJD00212AED
2SD1719
Rth t
103
(1)Without heat sink (2)With a 50x50x2mm Al heat sink (1) (2)
Thermal resistance Rth (C/W)
102
10
1
10-1
10-2 10-4
10-3
10-2
10-1
1
10
102
103
104
Time t (s)
SJD00212AED
3
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 JUL

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