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| APM2030NV N-Channel Enhancement Mode MOSFET Features * 20V/6A , RDS(ON)=28m(typ.) @ VGS=4.5V RDS(ON)=38m(typ.) @ VGS=2.5V Pin Description * * * Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant) G D S Top View of SOT-223 (2) D Applications * * Switching Regulators Switching Converters (1) G S (3) N-Channel MOSFET Ordering and Marking Information AP M 2030N L e a d F re e C o d e H a n d lin g C o d e T em p. R ange Package C ode Package C ode V : S O T -2 2 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n k : O rig in a l D e v ic e AP M 2030N V : AP M 2030N XXXXX X X X X X - D a te C o d e Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 1 www.anpec.com.tw APM2030NV Absolute Maximum Ratings Symbol VDSS VGSS ID* IDM* IS* TJ TSTG PD* RJA* Note: *Surface Mounted on 1in pad area, t 10sec. 2 (TA = 25C unless otherwise noted) Rating 20 12 6 VGS=4.5V 24 2.3 150 -55 to 150 TA=25C TA=100C 1.47 0.58 85 A C W C/W V A Unit Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Diode Continuous Forward Current Maximum Junction Temperature Storage Temperature Range Power Dissipation for Single Operation Thermal Resistance-Junction to Ambient Electrical Characteristics Symbol Parameter (TA = 25C unless otherwise noted) APM2030NV Min. Typ. Max. Test Condition Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) IGSS RDS(ON) VSD a a VGS=0V, IDS=250A VDS=16V, VGS=0V TJ=85C VDS=VGS, IDS=250A VGS=12V, VDS=0V VGS=4.5V, IDS=6A VGS=2.5V, IDS=2A ISD=1.5A, VGS=0V 20 1 30 0.5 0.7 28 38 0.7 1 100 32 45 1.3 V A V nA m V Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage b Gate Charge Characteristics Qg Total Gate Charge Qgs Qgd Gate-Drain Charge 9 VDS=10V, VGS=4.5V, IDS=6A 3.6 1 11 nC Gate-Source Charge Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 2 www.anpec.com.tw APM2030NV Electrical Characteristics (Cont.) (TA = 25C unless otherwise noted) Symbol Parameter b Test Condition APM2030NV Min. Typ. Max. Unit Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) Tr td(OFF) Tf Notes: VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS=15V, Frequency=1.0MHz 2 520 110 70 17 32 29 56 32 15 45 25 pF Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time VDD=10V, RL=10, IDS=1A, VGEN=4.5V, RG=6 ns a : Pulse test ; pulse width300s, duty cycle2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 3 www.anpec.com.tw APM2030NV Typical Characteristics Power Dissipation 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 TA=25 C 0 20 40 60 80 100 120 140 160 o Drain Current 7 6 5 4 3 2 1 0 0 TA=25 C,VG=4.5V 20 40 60 80 100 120 140 160 o Tj - Junction Temperature (C) ID - Drain Current (A) Ptot - Power (W) Tj - Junction Temperature (C) Safe Operation Area Normalized Transient Thermal Resistance 50 n) L im it Thermal Transient Impedance 2 1 Duty = 0.5 0.2 0.1 100s 300s 1ms ID - Drain Current (A) R ds 10 (o 0.1 0.02 0.01 0.05 1 10ms 100ms 1s 0.1 0.01 Single Pulse DC 0.01 TC=25 C 0.1 1 10 80 o 1E-3 1E-4 1E-3 0.01 Mounted on 1in pad o RJA : 85 C/W 2 0.1 1 10 100 VDS - Drain - Source Voltage (V) Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 4 www.anpec.com.tw APM2030NV Typical Characteristics (Cont.) Output Characteristics 20 VGS=4,5,6,7,8,9,10V 18 16 3V 70 80 Drain-Source On Resistance RDS(ON) - On - Resistance (m) 60 50 40 30 20 10 0 ID - Drain Current (A) 14 12 10 8 6 4 1.5V 2 0 0 1 2 3 4 5 2V VGS=2.5V VGS=4.5V 0 4 8 12 16 20 24 VDS - Drain - Source Voltage (V) ID - Drain Current (A) Transfer Characteristics 24 21 1.6 Gate Threshold Voltage IDS =250A Normalized Threshold Vlotage 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 -50 -25 ID - Drain Current (A) 18 15 12 9 6 3 0 Tj=125 C Tj=25 C o o Tj=-55 C o 0 1 2 3 4 0 25 50 75 100 125 150 VGS - Gate - Source Voltage (V) Tj - Junction Temperature (C) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 5 www.anpec.com.tw APM2030NV Typical Characteristics (Cont.) Drain-Source On Resistance 2.0 VGS = 4.5V 1.8 IDS = 6A 10 20 Source-Drain Diode Forward Normalized On Resistance 1.6 1.4 1.2 1.0 0.8 0.6 0.4 RON@Tj=25 C: 28m 0.2 -50 -25 0 25 50 75 100 125 150 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 o IS - Source Current (A) 1 Tj=150 C o Tj=25 C o Tj - Junction Temperature (C) VSD - Source - Drain Voltage (V) Capacitance 800 Frequency=1MHz 700 600 10 VDS=10V ID = 6A Gate Charge Ciss 500 400 300 200 Coss 100 0 Crss VGS - Gate-source Voltage (V) 20 8 C - Capacitance (pF) 6 4 2 0 4 8 12 16 0 0 4 8 12 16 20 24 VDS - Drain - Source Voltage (V) QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 6 www.anpec.com.tw APM2030NV Packaging Information SOT-89 (Reference EIAJ ED-7500A Registration SC-62) D D1 H E 1 2 3 L C B1 B e e1 A Dim A B B1 C D D1 e e1 E H L Millimeters Min. 1.40 0.40 0.35 0.35 4.40 1.35 1.50 BSC 3.00 BSC 2.29 3.75 0.80 2.60 4.25 1.20 10 0.090 0.148 0.031 Max. 1.60 0.56 0.48 0.44 4.60 1.83 Min. 0.055 0.016 0.014 0.014 0.173 0.053 Inches Max. 0.063 0.022 0.019 0.017 0.181 0.072 0.059 BSC 0.118 BSC 0.102 0.167 0.047 10 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 7 www.anpec.com.tw APM2030NV Packaging Information SOT-223 (Reference JEDEC Registration SOT-223) 3.3 [0.132] 1.5 [0.06] D B 1 A c 6.3 [0.252] 1.5 T YP [0.06] 2.3 [0.092] H E L K e e 1 A 1 1 T YP [0.04] LAN D PAT T ER N R EC O M M EN D AT IO N B C O N T RO LLIN G D IM EN SIO N IS M ILLIM ET ER S VALU ES IN [ ] AR E IN C H Dim A A1 B B1 c D e e1 H L K M illimet ers M in. 1.50 0.02 0.60 2.90 0.28 6.30 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0 13 7.30 1.10 2.00 10 H L K M ax. 1.80 0.08 0.80 3.10 0.32 6.70 A A1 B B1 c D Inches M in. 1.50 0.02 0.60 2.90 0.28 6.30 0.09 BSC 0.18 BSC 6.70 0.91 1.50 0 13 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 8 www.anpec.com.tw APM2030NV Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb), 100%Sn Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition TP (IR/Convection or VPR Reflow) tp C ritical Zone T L to T P R am p-up T e m p e ra tu re TL T sm ax tL T sm in R am p-down ts Preheat 25 t 25 C to Peak T im e Classification Reflow Profiles Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Time maintained above: - Temperature (TL) - Time (tL) Peak/Classificatioon Temperature (Tp) Time within 5C of actual Peak Temperature (tp) Ramp-down Rate Sn-Pb Eutectic Assembly 3C/second max. 100C 150C 60-120 seconds 183C 60-150 seconds See table 1 10-30 seconds Pb-Free Assembly 3C/second max. 150C 200C 60-180 seconds 217C 60-150 seconds See table 2 20-40 seconds 6C/second max. 6C/second max. 6 minutes max. 8 minutes max. Time 25C to Peak Temperature Notes: All temperatures refer to topside of the package .Measured on the body surface. Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 9 www.anpec.com.tw APM2030NV Classification Reflow Profiles(Cont.) Table 1. SnPb Entectic Process - Package Peak Reflow Tem peratures 3 3 Package Thickness Volum e m m Volum e m m <350 350 <2.5 m m 240 +0/-5C 225 +0/-5C 2.5 m m 225 +0/-5C 225 +0/-5C Table 2. Pb-free Process - Package Classification Reflow Tem peratures 3 3 3 Package Thickness Volum e mm Volum e mm Volum e mm <350 350-2000 >2000 <1.6 m m 260 +0C* 260 +0C* 260 +0C* 1.6 m m - 2.5 m m 260 +0C* 250 +0C* 245 +0C* 2.5 m m 250 +0C* 245 +0C* 245 +0C* *Tolerance: The device m anufacturer/supplier shall assure process com patibility up to and including the stated classification tem perature (this m eans Peak reflow tem perature +0C. For exam ple 260C+0C) at the rated MSL level. Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 Ko Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 10 www.anpec.com.tw APM2030NV Carrier Tape & Reel Dimensions (Cont.) T2 J C A B T1 Application A 330 3 B 100 2 D 1.5 +0.1 C 13 0. 5 D1 J 2 0.5 Po T1 T2 16.4 + 0.3 2.5 0.5 -0.2 P1 2.0 0.1 Ao 6.8 0.1 W 16+ 0.3 - 0.1 Bo 10.4 0.1 P 8 0.1 Ko 2.5 0.1 E 1.75 0.1 t 0.30.05 TO-252 F 7.5 0.1 1.5 0.25 4.0 0.1 (mm) Cover Tape Dimensions Application TO- 252 Carrier Width 16 Cover Tape Width 13.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. B.1 - Mar., 2005 11 www.anpec.com.tw |
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