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| SM-8 COMPLEMENTARY MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 ZDT6718 C1 C1 C2 C2 PARTMARKING DETAIL T6718 B1 E1 B2 E2 NPN PNP SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg NPN 20 20 5 6 2 PNP -20 -20 -5 -6 -1.5 UNIT V V V A A C -55 to +150 THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2 2.5 16 20 62.5 50 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 372 ZDT6718 NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance Turn-On Time Turn-Off Time SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(sat) 7 70 130 0.89 0.79 200 300 200 100 100 400 450 360 180 140 23 170 400 30 MHz pF MIN. 20 20 5 TYP. 100 27 8.3 100 100 100 15 150 200 1.0 1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=100A IC=10mA* IE=100A VCB=16V VEB=4V VCES=16V IC=0.1A, IB=10mA* IC=1A, IB=10mA* IC=2.5A, IB=50mA* IC=2.5A, IB=50mA* IC=2.5A, VCE=2V* IC=10mA, VCE=2V* IC=200mA, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* IC=50mA, VCE=10V f=100MHz VCB=10V, f=1MHz VCC=10V, IC=1A IB1=-IB2=10mA VBE(sat) VBE(on) hFE fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see SuperSOT FMMT618 datasheet. 3 - 373 ZDT6718 PNP TRANSISTOR ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO ICES VCE(SAT) -16 -130 -145 -0.87 -0.81 300 300 150 50 15 150 475 450 230 70 30 180 21 40 670 30 MHz pF MIN. -20 -20 -5 TYP. -65 -55 -8.8 -100 -100 -100 -40 -200 -220 -1.0 -1.0 MAX. UNIT V V V nA nA nA mV mV mV V V CONDITIONS. IC=-100A IC=-10mA* IE=-100A VCB=-15V VEB=-4V VCES=-15V IC=-0.1A, IB=-10mA* IC=-1A, IB=-20mA* IC=-1.5A, IB=-50mA* IC=-1.5A, IB=-50mA* IC=-2A, VCE=-2V* IC=-10mA, VCE=-2V* IC=-100mA, VCE=-2V* IC=-2A, VCE=-2V* IC=-4A, VCE=-2V* IC=-6A, VCE=-2V* IC=-50mA, VCE=-10V f=100MHz VCB=-10V, f=1MHz VCC=-10V, IC=-1A IB1=IB2=20mA VBE(SAT) VBE(ON) hFE Transition Frequency Output Capacitance Turn-On Time Turn-Off Time fT Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% For typical characteristics graphs see SuperSOT FMMT718 datasheet. 3 - 374 |
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