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| UMZ8.2N Diodes Zener diode UMZ8.2N Applications Constant voltage control Noise suppression on signal line External dimensions (Units : mm) 2.00.2 1.30.1 0.65 0.65 0.90.1 0.3 0.6 (All leads have the same dimensions) Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC-70 JEDEC : SOT-323 Circuit Absolute maximum ratings (Ta = 25C) Parameter Power dissipation Symbol P Tj Tstg Limits 200 150 -55~+150 Unit mW C C Junction temperature Storage temperature Total of 2 elements Electrical characteristics (Ta = 25C) Parameter Zener voltage Reverse current Operating resistance Rising operating resistance Symbol VZ IR ZZ ZZK Min. 7.76 - - - Max. 8.64 0.50 30 60 Unit V A IZ=5mA VR=5V IZ=5mA IZ=0.5mA Conditions 6A 0.30.1 Features 1) Small surface mounting type. (UMD3) 2) Multiple diodes with common anode configuration. 3) High reliability. 0.1Min. 1.250.1 2.10.1 0~0.1 0.150.05 UMZ8.2N Diodes Electrical characteristic curves (Ta = 25C) 10 DYNAMIC IMPEADANCE : ZZ () 100 FORWARD CURRENT : IF (mA) 10 ZENER CURRENT : IZ (mA) 1 1 Ta=-25C Ta=25C Ta=75C Ta=125C 0.1 0.01 0.01 0 8.0 9.0 10.0 1 0.1 1 ZENER CURRENT : IZ (mA) 10 0 0.3 0.4 Ta= -25 C Ta= 25 C Ta= 75C T a= 125 C 10 0.1 0.5 0.6 0.7 0.8 0.9 1.0 ZENER VOLTAGE : VZ (V) FORWARD VOLTAGE : VF (V) Fig.1 Zener voltage characteristics Fig.2 Operating resistance Zener current characteristics Fig.3 Forward characteristics 300 POWER DISSIPATION : Pd (mW) 200 100 0 0 25 50 100 150 AMBIENT TEMPERATURE : Ta (C) Fig.4 Derating curve |
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