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| MMBT6027 Silicon programmable unijunction transistor (PUTs) in package SOT-23 0.5 max 3 2.55 max 1.4 max 1.9 3.1 max 1.2 max 1 2 Pinouts: 1- Anode, 2- Cathode, 3- Gate Ratings (T A = 25C) Symbol VAK VGKF VGKR VGAR IT ITRM Parameter, units *Anode to cathode voltage, V *Gate to cathode forward voltage, V *Gate to cathode reverse voltage, V *Gate to anode reverse voltage, V *DC forward anode current, mA Repetitive peak forward current, A 100s Pulse width, 1% duty cycle *20s Pulse width, 1% duty cycle *Power dissipation, mW * - Anode positive, RGA =1000; Anode negative, RGA=open Limits 40 40 -5 40 150 1 2 300 PT Electrical Characteristics (T A = 25C) Symbol IP IGAO IGKS VF VO VT IV tR Parameter, units, test conditions Peak current, A, VS=10V, RG=10k Gate to anode leakage current, nA, VS=40V, cathode open Gate to cathode leakage current, nA, VS=40V, anode to cathode shorted Forward voltage, V, IF=50mA Peak Peak output voltage, V, VG=20V, CC=0.2 F Offset voltage, V VS=10V, RG=10k Valley current, A, VS=10V, RG=10k Pulse voltage rise time, ns UB=20V, CC =0.2 F min Limits typ 4 1 5 0.8 max 5 10 50 1.5 6 0.2 70 11 0.35 150 40 80 0.6 Planeta Electronic company JSC Planeta, 2/13, Fedorovsky Ruchei, Veliky Novgorod, 173004, Russia Ph/Fax: +7 (81622) 3-17-36, 3-32-86 E-mail: planeta@novgorod.net http://www.planetasemi.com |
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