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| High Voltage IGBT VCES IC90 2.0 A 2.0 A VCE(SAT) 2.7 V 3.5 V IXGP 2N100 1000 V IXGP 2N100A 1000 V Symbol VCES VCGR VGES VGEM I C25 I C90 ICM SSOA (RBSOA) PC TJ TJM TSTG Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TJ = 125C, RG = 150W Clamped inductive load TC = 25C Maximum Ratings 1000 1000 20 30 4 2 8 I CM = 6 @ 0.8 VCES 25 -55 ... +150 150 -55 ... +150 4 300 W C C C g C V V V V A A A A TO-220 1 2 3 2 = Collector 4 = Collector 4 1 = Gate 3 = Emitter Features Max. Lead Temperature for Soldering (1.6mm from case for 10s) International Low V CE(sat) standard package Symbol Test Conditions (TJ = 25C unless otherwise specified) BVCES VGE(th) I CES I GES VCE(sat) IC = 25A, VGE = 0 V IC = 25A, VCE = VGE VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V I C = IC90, VGE = 15 V IXGP2N100 IXGP2N100A TJ = 25C TJ = 125C Characteristic Values Min. Typ. Max. 1000 2.5 5.0 10 200 + 50 2.7 3.5 V V A A nA V V High current handling capability MOS Gate turn-on - drive simplicity - for low on-state conduction losses Applications Capacitor discharge Anode triggering of thyristors DC choppers Switched-mode and resonant-mode power supplies. (c) 2000 IXYS All rights reserved 95514C (9/00) IXGP 2N100 IXGP 2N100A Symbol Test Conditions (TJ = 25C unless otherwise specified) gfs IC = IC90, VCE = 10 V, Pulse test, t < 300 s, duty cycle < 2 % Cies Coes Cres Qg Qge Qgc td(on) t ri td(off) tfi Eoff Inductive load, TJ = 25C IC = IC90, VGE = 15 V RG = 150 W VCLAMP = 0.8 VCES Note 1 IXGP2N100 IXGP2N100A IXGP2N100 IXGP2N100A td(on) t ri E(on) td(off) tfi Inductive load, TJ = 125C IC = IC90, VGE = 15 V RG = R(off) = 150 W VCLAMP = 0.8 VCES Note 1 IXGP2N100 IXGP2N100A IXGP2N100 Eoff RthJC RthJA Notes: 1. Switching times may increase for VCE (Clamp) > 0.8 VCES, higher T J or increased RG. Characteristic Values Min. Typ. Max. 0.7 1.5 S TO-220 Outline VCE = 25 V, VGE = 0 V, f = 1 MHz 101 12 1.8 pF pF pF nC nC nC ns ns 600 360 1.2 0.6 ns ns ns mJ mJ ns ns mJ ns ns ns mJ mJ 5 K/W IC = Ic90, VGE = 15 V, VCE = 0.5 VCES 7.8 1.5 4.2 15 20 300 180 0.56 0.26 15 25 0.3 400 800 360 1.0 0.5 560 1000 IXGP2N100A 110 K/W The data herein reflects the advanced objective technical specification and characterization data from engineering lots. IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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