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| FDD4685 40V P-Channel PowerTrench(R) MOSFET October 2006 FDD4685 40V P-Channel PowerTrench(R) MOSFET -40V, -32A, 27m Features General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench(R) technology to deliver low rDS(on) and good switching characteristic offering superior performance in application. Max rDS(on) = 27m at VGS = -10V, ID = -8.4A Max rDS(on) = 35m at VGS = -4.5V, ID = -7A High performance trench technology for extremely low rDS(on) RoHS Compliant tm Application Inverter Power Supplies S G S D G D O -2 52 T -PA K (TO -252) D MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous(Package Limited) -Continuous(Silicon Limited) -Continuous -Pulsed Drain-Source Avalanche Energy Power Dissipation Power Dissipation Operating and Storage Junction Temperature Range TC= 25C (Note 1a) (Note 3) TC= 25C TC= 25C TA= 25C (Note 1) (Note 1a) Ratings -40 20 -32 -40 -8.4 -100 121 69 3 -55 to +150 mJ W C A Units V V Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.8 40 C/W Package Marking and Ordering Information Device Marking FDD4685 Device FDD4685 Package D-PAK(TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2006 Fairchild Semiconductor Corporation FDD4685 Rev.B 1 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = -250A, VGS = 0V ID = -250A, referenced to 25C VDS = -32V, VGS = 0V VGS = 20V, VGS = 0V -40 -33 -1 100 V mV/C A nA On Characteristics (Note 2) VGS(th) VGS(th) TJ rDS(on) gFS Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient Static Drain to Source On Resistance Forward Transconductance VGS = VDS, ID = -250A ID = -250A, referenced to 25C VGS = -10V, ID = -8.4A VGS = -4.5V, ID = -7A VGS = -10V, ID = -8.4A, TJ=125C VDS = -5V, ID = -8.4A -1 -1.6 4.9 23 30 33 23 27 35 42 S m -3 V mV/C Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = -20V, VGS = 0V, f = 1MHz f = 1MHz 1790 260 140 4 2380 345 205 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg(TOT) Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Gate Charge Gate to Drain "Miller" Charge VDD =-20V, ID = -8.4A VGS = -5V VDD = -20V, ID = -8.4A VGS = -10V, RGEN = 6 8 15 34 14 19 5.6 6.1 16 27 55 26 27 ns ns ns ns nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = -8.4A (Note 2) -0.85 30 31 -1.2 45 47 V ns nC IF = -8.4A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to- ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a. 40C/W when mounted on a 1 in2 pad of 2 oz copper b. 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 9A, VDD = 40V, VGS = 10V. FDD4685 Rev.B 2 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 100 80 60 40 20 0 0 VGS = -3V NORMALIZED DRAIN TO SOURCE ON-RESISTANCE PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = -10V VGS = -6V 3.0 2.6 2.2 1.8 VGS = -3V VGS = -4V VGS = -4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX -ID, DRAIN CURRENT (A) VGS = -4.5V VGS = -4V VGS = -6V 1.4 1.0 0.6 VGS = -10V 1 2 3 -VDS, DRAIN TO SOURCE VOLTAGE (V) 4 0 20 40 60 -ID, DRAIN CURRENT(A) 80 100 Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 70 rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) ID = -8.4A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -50 ID =-8.4A VGS = -10V 60 50 40 30 20 TJ = 125oC TJ = 25oC -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (oC) 150 2 3 4 5 6 7 8 9 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. Normalized On Resistance vs Junction Temperature -IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 40 10 TJ = 150oC 100 80 60 40 20 0 TJ = 150oC TJ = -55oC TJ = 25oC PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 0V -ID, DRAIN CURRENT (A) 1 TJ = 25oC TJ = -55oC 1 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 2 6 0.1 0.4 0.6 0.8 1.0 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.2 Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current FDD4685 Rev.B 3 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted -VGS, GATE TO SOURCE VOLTAGE(V) 10 VDD = -10V 10 4 8 CAPACITANCE (pF) Ciss 6 4 2 0 VDD = -20V VDD = -30V 10 3 Coss 10 2 Crss f = 1MHz VGS = 0V 0 10 20 30 Qg, GATE CHARGE(nC) 40 10 0.1 1 1 10 -VDS, DRAIN TO SOURCE VOLTAGE (V) 50 Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 50 -ID, DRAIN CURRENT (A) -IAS, AVALANCHE CURRENT(A) 10 9 8 7 6 5 4 3 2 TJ = 125oC TJ = 25oC 40 VGS = -10V 30 20 Limited by Package VGS = -4.5V 10 RJC = 1.8 C/W o 1 0.01 0.1 1 10 tAV, TIME IN AVALANCHE(ms) 100 0 25 50 75 100 o 125 150 TC, CASE TEMPERATURE ( C) Figure 9. Unclamped Inductive Switching Capability 200 Figure 10. Maximum Continuous Drain Current vs Case Temperature 300 250 200 150 VGS = -10V FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 150 - T c ---------------------125 Tc = 25oC 100 -ID, DRAIN CURRENT (A) 100us 10 1ms P(PK), PEAK TRANSIENT POWER (W) 100 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED TC = 25OC 10ms DC SINGLE PULSE 0.1 1 10 -VDS, DRAIN to SOURCE VOLTAGE (V) 100 50 -3 10 10 -2 10 t, PULSE WIDTH (s) -1 10 0 10 1 Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation FDD4685 Rev.B 4 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM 0.01 t1 SINGLE PULSE t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 1E-3 -5 10 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 13. Transient Thermal Response Curve FDD4685 Rev.B 5 www.fairchildsemi.com FDD4685 40V P-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FAST(R) FASTrTM FPSTM FRFETTM FACT Quiet SeriesTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM TinyBoostTM TinyBuckTM TinyPWMTM TinyPowerTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UniFETTM UltraFET(R) VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. I20 FDD4685 Rev. B 6 www.fairchildsemi.com |
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