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Features
* 2.7 to 3.6V Supply
- Full Read and Write Operation
* Low Power Dissipation * * * * * * *
- 8 mA Active Current - 50 A CMOS Standby Current Read Access Time - 250 ns Byte Write - 3 ms Direct Microprocessor Control - DATA Polling - READ/BUSY Open Drain Output on TSOP High Reliability CMOS Technology - Endurance: 100,000 Cycles - Data Retention: 10 Years Low Voltage CMOS Compatible Inputs and Outputs JEDEC Approved Byte Wide Pinout Commercial and Industrial Temperature Ranges
16K (2K x 8) Battery-VoltageTM Parallel EEPROMs AT28BV16
Description
The AT28BV16 is a low-power, high-performance Electrically Erasable and Programmable Read Only Memory with easy to use features. The AT28BV16 is a 16K memory organized as 2,048 words by 8 bits. The device is manufactured with Atmel's reliable nonvolatile CMOS technology. (continued)
Pin Configurations
Pin Name A0 - A10 CE OE WE I/O0 - I/O7 RDY/BUSY NC DC Function Addresses Chip Enable Output Enable Write Enable Data Inputs/Outputs Ready/Busy Output No Connect Don't Connect
OE NC A9 A8 NC WE VCC RDY/BUSY NC A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2
TSOP Top View
PDIP, SOIC Top View
A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 23 22 21 20 19 18 17 16 15 14 13 VCC A8 A9 WE OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3
PLCC Top View
A7 NC NC DC VCC WE NC 14 15 16 17 18 19 20 A6 A5 A4 A3 A2 A1 A0 NC I/O0 5 6 7 8 9 10 11 12 13 4 3 2 1 32 31 30 29 28 27 26 25 24 23 22 21 A8 A9 NC NC OE A10 CE I/O7 I/O6
I/O1 I/O2 GND DC I/O3 I/O4 I/O5
Rev. 0380B-10/98
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The AT28BV16 is accessed like a static RAM for the read or write cycles without the need of external components. During a byte write, the address and data are latched internally, freeing the microprocessor address and data bus for other operations. Following the initiation of a write cycle, the device will go to a busy state and automatically clear and write the latched data using an internal control timer. The end of a write cycle can be determined by DATA polling of I/O 7 . Once the end of a write cycle has been detected, a new access for a read or a write can begin.
The CMOS technology offers fast access times of 250 ns at low power dissipation. When the chip is deselected the standby current is less than 50 A. Atmel's 28BV16 has additional features to ensure high quality and manufacturability. The device utilizes error correction internally for extended endurance and for improved data retention characteristics. An extra 32-bytes of EEPROM are available for device identification or tracking.
Block Diagram
Absolute Maximum Ratings*
Temperature Under Bias ................................ -55C to +125C Storage Temperature ..................................... -65C to +150C All Input Voltages (including NC Pins) with Respect to Ground ...................................-0.6V to +6.25V All Output Voltages with Respect to Ground .............................-0.6V to VCC + 0.6V Voltage on OE and A9 with Respect to Ground ...................................-0.6V to +13.5V *NOTICE: Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
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AT28BV16
AT28BV16
Device Operation
READ: The AT28BV16 is accessed like a Static RAM. When CE and OE are low and WE is high, the data stored at the memory location determined by the address pins is asserted on the outputs. The outputs are put in a high impedance state whenever CE or OE is high. This dual line control gives designers increased flexibility in preventing bus contention. BYTE WRITE: Writing data into the AT28BV16 is similar to writing into a Static RAM. A low pulse on the WE or CE input with OE high and CE or WE low (respectively) initiates a byte write. The address location is latched on the last falling edge of WE (or CE); the new data is latched on the first rising edge. Internally, the device performs a selfclear before write. Once a byte write has been started, it will automatically time itself to completion. Once a programming operation has been initiated and for the duration of tWC, a read operation will effectively be a polling operation. DATA POLLING: The AT28BV16 provides DATA POLLING to signal the completion of a write cycle. During a write cycle, an attempted read of the data being written results in the complement of that data for I/O7 (the other outputs are indeterminate). When the write cycle is finished, true data appears on all outputs. READY/BUSY (TSOP only): READY/BUSY is an open drain output; it is pulled low during the internal write cycle and released at the completion of the write cycle. WRITE PROTECTION: Inadvertent writes to the device are protected against in the following ways: (a) V C C sense--if VCC is below 2.0V (typical) the write function is inhibited; (b) VCC power on delay--once VCC has reached 2.0V the device will automatically time out 5 ms (typical) before allowing a byte write; and (c) Write Inhibit--holding any one of OE low, CE high or WE high inhibits byte write cycles. DEVICE IDENTIFICATIO N: An extra 32-bytes of EEPROM memory are available to the user for device identification. By raising A9 to 12 0.5V and using address locations 7E0H to 7FFH the additional bytes may be written to or read from in the same manner as the regular memory array.
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DC and AC Operating Range
AT28BV16-25 Operating Temperature (Case) VCC Power Supply Com. Ind. 0C - 70C -40C - 85C 2.7V to 3.6V AT28BV16-30 0C - 70C -40C - 85C 2.7V to 3.6V
Operating Modes
Mode Read Write
(2)
CE VIL VIL VIH X X X
OE VIL VIH X
(1)
WE VIH VIL X VIH X X
I/O DOUT DIN High Z
Standby/Write Inhibit Write Inhibit Write Inhibit Output Disable Notes: 1. X can be VIL or VIH. 2. Refer to AC Programming Waveforms.
X VIL VIH
High Z
DC Characteristics
Symbol ILI ILO ISB ICC VIL VIH VOL VOH Parameter Input Load Current Output Leakage Current VCC Standby Current CMOS VCC Active Current AC Input Low Voltage Input High Voltage Output Low Voltage Output High Voltage IOL = 1 mA IOL = 2 mA for RDY/BUSY IOH = -100 A 2.0 2.0 0.3 0.3 Condition VIN = 0V to VCC + 1.0V VI/O = 0V to VCC CE = VCC - 0.3V to VCC + 1.0V f = 5 MHz; IOUT = 0 mA; CE = VIL Min Max 5 5 50 8 0.6 Units A A A mA V V V V V
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AT28BV16
AT28BV16
AC Read Characteristics
AT28BV16-25 Symbol tACC tCE
(1) (2)
AT28BV16-30 Min Max 300 300 100 0 0 55 Units ns ns ns ns ns
Parameter Address to Output Delay CE to Output Delay OE to Output Delay CE or OE High to Output Float Output Hold from OE, CE or Address, whichever occurred first
Min
Max 250 250 100
tOE
tDF(3)(4) tOH
0 0
55
AC Read Waveforms(1)(2)(3)(4)
Notes:
1. CE may be delayed up to tACC - tCE after the address transition without impact on tACC. 2. OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE or by tACC - tOE after an address change without impact on tACC. 3. tDF is specified from OE or CE whichever occurs first (CL = 5 pF). 4. This parameter is characterized and is not 100% tested.
Input Test Waveforms and Measurement Level
Output Test Load
tR, tF < 20 ns
Pin Capacitance
f = 1 MHz, T = 25C(1)
Symbol CIN COUT Note: Typ 4 8 Max 6 12 Units pF pF Conditions VIN = 0V VOUT = 0V
1. This parameter is characterized and is not 100% tested.
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AC Write Characteristics
Symbol tAS, tOES tAH tWP tDS tDH, tOEH tCS, tCH tWC tDB Parameter Address, OE Set-up Time Address Hold Time Write Pulse Width (WE or CE) Data Set-up Time Data, OE Hold Time CE to WE and WE to CE Set-up and Hold Time Write Cycle Time Time to Device Busy Min 10 100 150 100 10 0 3.0 50 1000 Max Units ns ns ns ns ns ns ms ns
AC Write Waveforms
WE Controlled
CE Controlled
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AT28BV16
AT28BV16
Data Polling Characteristics(1)
Symbol tDH tOEH tOE tWR Notes: Parameter Data Hold Time OE Hold Time OE to Output Delay
(2)
Min 10 10
Typ
Max
Units ns ns ns
Write Recovery Time 1. These parameters are characterized and not 100% tested. 2. See AC Characteristics.
0
ns
Data Polling Waveforms
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Ordering Information(1)
ICC (mA) tACC (ns) 250 Active 8 Standby 0.05 Ordering Code AT28BV16-25TC AT28BV16-25JC AT28BV16-25PC AT28BV16-25SC AT28BV16-25TI AT28BV16-25JI AT28BV16-25PI AT28BV16-25SI AT28BV16-30TC AT28BV16-30JC AT28BV16-30PC AT28BV16-30SC AT28BV16-30TI AT28BV16-30JI AT28BV16-30PI AT28BV16-30SI Package 28T 32J 24P6 24S 28T 32J 24P6 24S 28T 32J 24P6 24S 28T 32J 24P6 24S Operation Range Commercial (0C to 70C)
8
0.05
Industrial (-40C to 85C)
300
8
0.05
Commercial (0C to 70C)
8
0.05
Industrial (-40C to 85C)
Note:
1. See Valid Part Number table below.
Valid Part Numbers
The following table lists standard Atmel products that can be ordered.
Device Numbers AT28BV16 AT28BV16 Speed 25 30 Package and Temperature Combinations JC, JI, PC, PI, SC, SI, TC, TI JC, JI, PC, PI, SC, SI, TC, TI
Die Products
Reference Section: Parallel EEPROM Die Products
Package Type 28T 32J 24P6 24S 28-Lead, Plastic Thin Small Outline Package (TSOP) 32-Lead, Plastic J-Leaded Chip Carrier (PLCC) 24-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) 24-Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC)
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AT28BV16
AT28BV16
Packaging Information
28T, 28-Lead, Plastic Thin Small Outline Package (TSOP) Dimensions in Millimeters and (Inches)* 32J, 32-Lead, Plastic J-Leaded Chip Carier (PLCC) Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-016 AE
INDEX MARK AREA 11.9 (0.469) 11.7 (0.461) 13.7 (0.539) 13.1 (0.516)
.045(1.14) X 45
PIN NO. 1 IDENTIFY
.025(.635) X 30 - 45 .012(.305) .008(.203) .530(13.5) .490(12.4) .021(.533) .013(.330) .030(.762) .015(3.81) .095(2.41) .060(1.52) .140(3.56) .120(3.05)
.032(.813) .026(.660)
.553(14.0) .547(13.9) .595(15.1) .585(14.9)
0.55 (0.022) BSC 7.15 (0.281) REF 8.10 (0.319) 7.90 (0.311)
0.27 (0.011) 0.18 (0.007)
.050(1.27) TYP
1.25 (0.049) 1.05 (0.041)
.300(7.62) REF .430(10.9) .390(9.90) AT CONTACT POINTS
0.20 (0.008) 0.10 (0.004) 0 REF 5 0.20 (0.008) 0.15 (0.006)
.022(.559) X 45 MAX (3X) .453(11.5) .447(11.4) .495(12.6) .485(12.3)
0.70 (0.028) 0.30 (0.012)
*Controlling dimension: millimeters 24P6, 24-Lead, 0.600" Wide, Plastic Dual Inline Package (PDIP) Dimensions in Inches and (Millimeters)
JEDEC STANDARD MS-011 AA
1.27(32.3) 1.24(31.5)
.020(.508) .013(.330)
24S, 24-Lead, 0.300" Wide, Plastic Gull Wing Small Outline (SOIC) Dimensions in Inches and (Millimeters)
PIN 1
.566(14.4) .530(13.5)
PIN 1 ID
.299(7.60) .420(10.7) .291(7.39) .393(9.98)
1.100(27.94) REF .220(5.59) MAX SEATING PLANE .161(4.09) .125(3.18) .110(2.79) .090(2.29) .065(1.65) .041(1.04) .630(16.0) .590(15.0) 0 REF 15 .690(17.5) .610(15.5)
.090(2.29) MAX .005(.127) MIN
.050(1.27) BSC .616(15.6) .598(15.2)
.065(1.65) .015(.381) .022(.559) .014(.356)
.105(2.67) .092(2.34)
.012(.305) .003(.076)
.012(.305) .008(.203)
.013(.330) .009(.229) 0 REF 8 .050(1.27) .015(.381)
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AT28BV16
AT28BV16
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(c) Atmel Corporation 1998. Atmel Cor poration makes no warranty for the use of its products, other than those expressly contained in the Company's standard warranty which is detailed in Atmel's Terms and Conditions located on the Company's website. The Company assumes no responsibility for any errors which may appear in this document, reserves the right to change devices or specifications detailed herein at any time without notice, and does not make any commitment to update the information contained herein. No licenses to patents or other intellectual proper ty of Atmel are granted by the Company in connection with the sale of Atmel products, expressly or by implication. Atmel's products are not authorized for use as critical components in life suppor t devices or systems. Marks bearing
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0380B-10/98/xM
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