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SD1390
RF & MICROWAVE TRANSISTORS UHF BASE STATION APPLICATIONS
.470 .24 .P .CLASS .COMMON .POWER
P RELIMINARY DATA
MHZ VOLTS OUT = 1.5 W WITH 13.0 dB MIN. GAIN A EMITTER SATURATION 2.2 W MIN.
.28 0 x 4LS L (M1 2 3 ) O R DE R CODE SD1390 BRANDING SD1390
PIN CONNECTION
DESCRIPTION The SD1390 is a gold metallized NPN planar transistor using diffused emitter ballast resistors for reliability and ruggedness. The SD1390 is specifically designed as a low power, high gain driver and can be operated in Class A, B or C.
1. Collector 2. Emitter 3. Base 4. Emitter
ABSOLUTE MAXIMUM RATINGS (T case = 25 C)
Symbol Parameter Value Un it
VCBO VCEO VEBO IC PDISS TJ TSTG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation (TC +75C) Junction Temperature Storage Temperature
40 24 3.5 0.35 8.33 +200 - 65 to +150
V V V A W C C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance 12 C/W
August 23, 1996
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SD1390
ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC
S ym bo l Te s t C o n ditio n s Va lu e Min. Typ . Ma x. Un it
BVCBO BVCEO BVEBO ICBO hFE
IC = 1 mA IC = 1 mA IE = 1 mA VC B = 24 V VC E = 5 V
IE = 0 mA IB = 0 mA IC = 0 mA IE = 0 mA IC = 0.1 A
40 24 3.5 -- 20
-- -- -- -- --
-- -- -- 1.0 120
V V V mA --
DYNAMIC
S ym bo l T e s t Co n d itio ns Va lu e Min. T yp . Ma x. Un it
POUT COB
f = 470 MHz PIN = 75 mW f = 1 MHz VCB = 28 V
VCC = 24V
ICQ = 200 mA
1.5 --
-- --
-- 5.0
W pF
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SD1390
TYPICAL PERFORMANCE
OUTPUT POW ER vs INPUT POWE R
POWE R GAIN vs FREQUE NCY
INPUT RETURN LOSS vs FRE QUENCY
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SD1390
TEST CIRCUIT
C1 : Trim Capacitor GKU10056 2.8-10pf C2, C6 : Chip Capacitor LCC AC12CE221J / 220pf C3 : Chip Capacitor VITRAMON "High Q" / 15+4.7pf C4,C5 : Chip Capacitor LCC AC 12CE270J / 27 pf C7,C9,C11: C12 : Chip Capacitor LCC AC20CD102K+AC12CE220J / 1nF+220 pf C8,C10 : C13 : Tantle 10 mF, 35V
L1 L2 L3 L4 L5 L6 L7 L8 L9 L10 L11
: : : : : : : : : : :
Microstrip lin W = 2.1 mm, L = 10mm Microstrip line W = 1.0mm, L = 26mm Microstrip line W = 10mm, L = 10mm Microstrip line W = 8.0mm, L = 5mm Microstrip line W = 8.0mm, L = 5mm Microstrip line W = 1.0mm, L = 15mm Microstrip line W = 1.0mm, L = 30mm 4 Tu rns ID = 2.5mm, 0.5mm Wire 11 turns ID = 2.5mm, 0.5 mm Wire 2 Tu rns ID = 5.0mm, 1.0mm Wire Choke 220 ohms - 1/4 Watts
R1 :
IMPEDANCE DATA
TYP ICAL INP UT IMP E DANCE ZIN
FREQ. 400 MHz 430 MHz 470 MHz 500 MHz
ZIN() 2.8 + j 3.0 2.6 + j 4.0 2.4 + j 4.5 2.0 + j 5.0
ZCL() 33 + j 47 36 + j 49 41 + j 52 45 + j 54
TYP ICAL COLLE CTOR LOAD IMP E DANC E ZCL
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No. 12-0123 rev. A UDCS No. 1010947
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c)1996 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia Malta - Morocco - The Netherlands - Singapore - Spain - Sweden - Switzerland - Taiwan Thailand - United Kingdom - U.S.A.
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