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| Preliminary RF5187 LOW POWER LINEAR AMPLIFIER 2 Typical Applications * 2.14GHz UMTS Systems * Digital Communication Systems * PCS Communication Systems * Commercial and Consumer Systems 2 POWER AMPLIFIERS Product Description The RF5187 is a highly-linear, low-power amplifier IC. It has been designed for use as the driver RF amplifier in applications such as W-CDMA basestations. The RF5187 requires an input and output matching network and power supply feed line. The device is manufactured on an advanced Gallium Arsenide HBT process, and is packaged in a 8-pin plastic package with a backside ground. 3.90 0.10 -A0.43 0.05 0.05 0.05 Exposed Heat Sink 4.90 0.10 1.27 6.00 0.20 Dimensions in mm. 8 MAX 0 MIN 0.60 0.15 0.22 0.03 1.40 0.10 2.70 0.10 1.70 0.10 NOTES: 1. Shaded lead is pin 1. 2. Lead coplanarity - 0.10 with respect to datum "A". Optimum Technology Matching(R) Applied Si BJT Si Bi-CMOS u Package Style: SOIC-8 Slug GaAs HBT SiGe HBT GaAs MESFET Si CMOS Features * Single 3V to 6V Supply * 10dBm to 20dBm Ultra Linear Output Power * 14dB Gain at 2.14GHz * Power Down Mode * 800MHz to 2500MHz Operation RF IN 1 RF IN 2 PC 3 VCC 4 PACKAGE BASE GND 8 RF OUT 7 RF OUT 6 RF OUT 5 RF OUT BIAS CIRCUIT Ordering Information RF5187 RF5187 PCBA Low Power Linear Amplifier Fully Assembled Evaluation Board Functional Block Diagram RF Micro Devices, Inc. 7625 Thorndike Road Greensboro, NC 27409, USA Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com Rev A1 011016 2-73 RF5187 Absolute Maximum Ratings Parameter Supply Voltage (VCC) Power Control Voltage (VPC) DC Supply Current Input RF Power Output Load VSWR Operating Ambient Temperature Storage Temperature Preliminary Rating -0.5 to +7.5 -0.5 to +5V 450 +20 20:1 -40 to +85 -40 to +100 Unit VDC V mA dBm C C Caution! ESD sensitive device. RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s). 2 POWER AMPLIFIERS Parameter Overall Frequency Range Output Power OP1dB Small Signal Gain Input VSWR Specification Min. Typ. Max. Unit Condition T=25C, VCC =5.0V, ICC =240mA, Freq=2140MHz, POUT =13dBm 800 13 29 13 1.5:1 42 2.7 0.2 5 2 43 3.1 0.5 2500 15 MHz dBm dBm dB With external matching network. Two-Tone Specification Output IP3 45 3.7 dBm V V V mA A 13dBm per tone. To obtain 240mA idle current. Threshold voltage at device input. Power Control VPC Power Control "OFF" Power Supply Power Supply Voltage Supply Current Power Down Current 6 240 10 VPC =0.2V 2-74 Rev A1 011016 Preliminary Pin 1 Function RF IN Description RF input. This input is DC-coupled, so an external blocking capacitor is required if this pin is connected to a DC path. An optimum match to 50 is obtained by providing an external series capacitor of 2.4pF and then a shunt capacitor of 2.4pF. Those values are typical for 2140MHz; other values may be required for other frequencies. Same as pin 1. Power control pin. For obtaining maximum performance, the voltage on this pin can be used to set correct bias level. In a typical application this is implemented by a feedback loop. The feedback can be based on the actual supply current of the device (i.e. maintaining a fixed current level), or it can be based on the RF output power level to maintain a fixed RF power level (Automatic Level Control loop). A voltage of 0.5V or lower brings the part into power down state. Power supply pin for the bias circuits. External low frequency bypass capacitors should be connected if no other low frequency decoupling is nearby. RF output and bias for the output stage. The power supply for the output transistor needs to be supplied to this pin. This can be done through a quarter-wavelength microstrip line that is RF-grounded at the other end, or through an RF inductor that supports the required DC currents. Optimum load impedance is achieved by providing a shunt capacitor of 1.8pF and a series capacitor of 3.3pF. Those values are typical for 2140MHz; other values may be required for other frequencies. Since there are several output pins available (which are internally connected), one pin can be used for connecting the bias, another for connecting a (third) harmonic trap filter, and the other pins for the RF output. Same as pin 5. Same as pin 5. Same as pin 5. Ground connection. The backside of the package should be connected to the ground plane through a short path (i.e., vias under the device may be required). RF5187 Interface Schematic 2 3 RF IN PC 2 POWER AMPLIFIERS 4 5 VCC RF OUT 6 7 8 Pkg Base RF OUT RF OUT RF OUT GND Rev A1 011016 2-75 RF5187 Evaluation Board Schematic 2140MHz Operation (Download Bill of Materials from www.rfmd.com.) C2 2.4 pF 1 C1 2.4 pF VPC C6 1000 pF 2 3 4 PACKAGE BASE VCC VCC = 5 V f = 2140 MHz POUT = 13 dBm C8 1 uF C7 1000 pF C5 33 pF 8 7 6 5 C3 1.8 pF C3 3.3 pF Preliminary 2 POWER AMPLIFIERS J1 RF IN 50 strip 50 strip J2 RF OUT BIAS CIRCUIT P1 P1-1 L1 4.7 nH P1-3 1 2 3 CON3 VCC GND VPC 2-76 Rev A1 011016 Preliminary Evaluation Board Layout Board Size 1.5" x 1.0" Board Thickness 0.031", Board Material FR-4 RF5187 2 POWER AMPLIFIERS Rev A1 011016 2-77 RF5187 Preliminary 2 POWER AMPLIFIERS 2-78 Rev A1 011016 |
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