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| CZT3120 SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CZT3120 NPN Switching Power Transistor, manufactured by the epitaxial planar process, combines both power and high speed switching characteristics in a SOT-223 Surface Mount Package. Typical applications include drivers, DC-DC converters, and general fast switching applications. MARKING CODE: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS (TA=250C) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance ELECTRICAL CHARACTERISTICS(TA=250C) SYMBOL ICBO IEBO BVCBO BVCEO BVEBO VCE(SAT) VBE(ON) hFE hFE hFE fT TEST CONDITIONS VCB=80V VEB=5.0V IC=50A IC=10mA IE=50A IC=2.0A, IB=200mA IC=2.0A, VCE=1.0V VCE=5.0V, IC=10mA VCE=5.0V, IC=500mA VCE=5.0V, IC=3.0A VCE=10V, IC=500mA, f=1.0MHz 120 70 7.0 160 90 15 250 0.95 100 100 40 8.0 170 165 75 MHz 300 500 1.1 MIN TYP MAX 1.0 1.0 UNITS A A V V V mV V TJ, Tstg JA -65 to +150 62.5 0 0 SYMBOL VCBO VCEO VEBO IC PD 120 70 7.0 3.0 2.0 UNITS V V V A W C C/W R2 (17-June 2004) Central TM CZT3120 SURFACE MOUNT NPN SILICON SWITCHING POWER TRANSISTOR Semiconductor Corp. SOT-223 CASE - MECHANICAL OUTLINE LEAD CODE: 1) BASE 2) COLLECTOR 3) EMITTER 4) COLLECTOR MARKING CODE: FULL PART NUMBER SYMBOL A B C D E F G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0 10 0 10 0.059 0.071 1.50 1.80 0.018 --0.45 --0.000 0.004 0.00 0.10 15 15 0.009 0.014 0.23 0.35 0.248 0.264 6.30 6.70 0.114 0.122 2.90 3.10 0.130 0.146 3.30 3.70 0.264 0.287 6.70 7.30 0.024 0.033 0.60 0.85 0.091 2.30 0.181 4.60 SOT-223 (REV: R3) R2 (17-June 2004) |
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