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MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
BCR20A, BCR20B, BCR20C, BCR20E
OUTLINE DRAWING
Dimensions in mm
2.0 MIN 3
1
11 MAX 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE TERMINAL
2
* IT (RMS) ...................................................................... 20A * VDRM ..............................................................400V/500V * IFGT !, IRGT !, IRGT # ........................................... 30mA
BCR20A
APPLICATION Contactless AC switches, light dimmer, on/off control of traffic signals, on/off control of copier lamps, microwave ovens, solid state relay
MAXIMUM RATINGS
Symbol VDRM VDSM Parameter Repetitive peak off-state voltage V1 Non-repetitive peak off-state voltage V1 Voltage class 8 400 600 12 500 700 Unit V V
Symbol IT (RMS) ITSM I2t PGM PG (AV) VGM IGM Tj Tstg
Parameter RMS on-state current Surge on-state current I2t for fusing Peak gate power dissipation Average gate power dissipation Peak gate voltage Peak gate current Junction temperature Storage temperature
Conditions Commercial frequency, sine full wave, 360 conduction BCR20A, B, C BCR20E Tc=98C Tb=64C
Ratings 20 220 203 5.0 0.5 10 2.0 -20 ~ +125 -20 ~ +125
9 MAX
Unit A A A2s W W V A C C
8.7 MAX
60Hz sinewave 1 full cycle, peak value, non-repetitive Value corresponding to 1 cycle of half wave 60Hz, surge on-state current
V1. Gate open.
3 MAX
2
17.5 MAX
Feb.1999
24 MAX
3
1
MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM RATINGS (continue)
Symbol Parameter BCR20A -- Weight (Typical value) BCR20B BCR20C BCR20E -- -- Viso Soldering temperature Mounting torque Isolated voltage BCR20A only, 10 sec. BCR20C only BCR20E only, Ta=25C, AC 1 minute, T2 terminal to base Conditions Ratings 3.5 9.0 9.0 11 230 30 2.94 1500 C kg*cm N*m V g Unit
ELECTRICAL CHARACTERISTICS
Symbol IDRM VTM VFGT ! VRGT ! VRGT # IFGT ! IRGT ! IRGT # VGD Rth (j-c) Rth (j-b) (dv/dt)c Gate non-trigger voltage Thermal resistance Critical-rate of rise of off-state commutating voltage Gate trigger current V2 Gate trigger voltage V2 Parameter Repetitive peak off-state current On-state voltage ! @ # ! @ # Tj=125C, VD=1/2VDRM Junction to case (BCR20A, BCR20B, BCR20C) Junction to base (BCR20E) Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, Tb=25C (BCR20E only), ITM=30A, Instantaneous measurement Limits Min. -- -- -- -- -- -- -- -- 0.2 -- --
V3
Typ. -- -- -- -- -- -- -- -- -- -- -- --
Max. 3.0 1.5 1.5 1.5 1.5 30 30 30 -- 1.1 2.4 --
Unit mA V V V V mA mA mA V C/W C/W V/s
V2. Measurement using the gate trigger characteristics measurement circuit. V3. The critical-rate of rise of the off-state commutating voltage is shown in the table below.
Voltage class
VDRM (V)
(dv/dt) c Symbol R Min. -- 1. Junction temperature Tj=125C L 10 V/s R -- 2. Rate of decay of on-state commutating current (di/dt)c=-10A/ms 3. Peak off-state voltage VD=400V L 10 Unit Test conditions
Commutating voltage and current waveforms (inductive load)
8
400
SUPPLY VOLTAGE MAIN CURRENT MAIN VOLTAGE (dv/dt)c (di/dt)c
TIME
TIME TIME VD
10
600
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
OUTLINE DRAWING
BCR20B
2-3.2 MIN
Dimensions in mm
BCR20C
2-3.2 MIN
BCR20E
5.3 MAX
20 MAX
(16) 230.2 33 MAX 2 2.5 MIN 2.0 MIN 1
20 MAX
1 3 230.2 33 MAX
(16.2) 1 1 2.0 MIN
2 1 T1 TERMINAL 2 T2 TERMINAL 3 GATE 3 TERMINAL 2.0 MIN
10 MAX 19.5 MAX
1.9 MIN
1.8 MAX 10.5 MAX
25.5 MAX
11 MAX
3 MIN
3
26 MAX
8.7 MAX
22 MAX 21 MAX
2 M6 x 1. 0
8.7 MAX
2
PERFORMANCE CURVES
MAXIMUM ON-STATE CHARACTERISTICS 103 RATED SURGE ON-STATE CURRENT 320
SURGE ON-STATE CURRENT (A)
ON-STATE CURRENT (A)
7 TC = 25C 5 Tb = 25C 3 2
280 240 200 160 120 80 40 0 100 2 3 4 5 7 101 2 3 4 5 7 102
102 7 5 3 2 101 7 5 3 2 100 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 4.4 ON-STATE VOLTAGE (V)
CONDUCTION TIME (CYCLES AT 60Hz)
GATE VOLTAGE (V)
101
PGM = 5.0W IGM = 2A
GATE TRIGGER * CURRENT VOLTAGE (Tj = tC) GATE TRIGGER * CURRENT VOLTAGE (Tj = 25C)
3 2 VGM = 10V 7 5 3 VGT = 1.5V 2
PG(AV) = 0.5W
100 (%)
GATE CHARACTERISTICS
GATE TRIGGER CURRENT*VOLTAGE VS. JUNCTION TEMPERATURE 200 TEST PROCEDURE , AND 180 160 140 120 100 80 60 GATE TRIGGER VOLTAGE 40 20 0 -40 -20 0 20 40 60 80 100 120 140 160 JUNCTION TEMPERATURE (C)
Feb.1999
GATE TRIGGER CURRENT
100 7 5 3 2 IFGT I, IRGT I, IRGT III VGD = 0.2V 10-1 7 5 101 2 3 5 7 102 2 3 5 7 103 2 3 5 7 104 GATE CURRENT (mA)
1.8 MAX 12 MAX
8.7 MAX
3
22.5 MAX
19 MAX
21 MAX
14
MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO CASE) (BCR20A, B, C) MAXIMUM TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (JUNCTION TO BASE) (BCR20E)
TRANSIENT THERMAL IMPEDANCE (C/W)
TRANSIENT THERMAL IMPEDANCE (C/W)
102 2 3 5 7 103 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7 105 3.2 2.8 2.4 2.0 1.6 1.2 0.8 0.4 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 CONDUCTION TIME (CYCLES AT 60Hz)
MAXIMUM ON-STATE POWER DISSIPATION
ALLOWABLE CASE TEMPERATURE VS. RMS ON-STATE CURRENT 160 BCR20A, BCR20B, BCR20C BCR20E
ON-STATE POWER DISSIPATION (W)
50 45 40 360 35 CONDUCTION RESISTIVE, 30 INDUCTIVE 25 LOADS 20 15 10 5 0 0 4 8 12 16 20 24 28 32
BASE TEMPERATURE (C) CASE TEMPERATURE (C)
140 120 100 80 60
360 CONDUCTION RESISTIVE, INDUCTIVE LOADS
40 CURVES APPLY REGARDLESS 20 OF CONDUCTION ANGLE 0 0 4 8 12 16
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20A) 160 160 160 t4.0 120 120 t3.0 140 80 80 t2.0 120 100 80 60 40 20 0 0 4 8 12 16
ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE NATURAL CONVECTION : MOUNTING ON FIN WITH SOLDER : MOUNTING PLATE WITHOUT GREASE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20B) 160 140 120 100 80 60 40 20 0 0 4 8 12 16
NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : INSULATED PLATE WITH GREASE ALL FINS ARE BLACK PAINTED ALUMINUM AND GREASED CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
160 160 t4.0 120 120 t3.0 80 80 t2.0
20
24
28
32
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
Feb.1999
MITSUBISHI SEMICONDUCTOR TRIAC
BCR20A, BCR20B, BCR20C, BCR20E
MEDIUM POWER USE
A, B, C : NON-INSULATED TYPE, E : INSULATED TYPE, GLASS PASSIVATION TYPE
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20C) 160 ALL FINS ARE BLACK PAINTED
AMBIENT TEMPERATURE (C)
ALLOWABLE AMBIENT TEMPERATURE VS. RMS ON-STATE CURRENT (BCR20E) 160 ALL FINS ARE BLACK PAINTED
AMBIENT TEMPERATURE (C)
140 CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
ALUMINUM AND GREASED
140 RESISTIVE, INDUCTIVE LOADS
NATURAL CONVECTION
ALUMINUM AND GREASED
120 100 80 60 40 20 0 0 4 8 12
160 160 t4.0 120 120 t3.0 80 80 t2.0
120 100 80 60 40 20 0 0 4 8 12
160 160 t4.0 120 120 t3.0 80 80 t2.0
CURVES APPLY REGARDLESS OF CONDUCTION ANGLE
NATURAL CONVECTION : MOUNTING ON FIN WITHOUT GREASE : MICA PLATE WITH GREASE
16
20
24
28
32
16
20
24
28
32
RMS ON-STATE CURRENT (A)
RMS ON-STATE CURRENT (A)
GATE TRIGGER CHARACTERISTICS TEST CIRCUITS 6 6
6V V
A RG
6V V
A RG
TEST PROCEDURE 1 6
TEST PROCEDURE 2
6V V
A RG
TEST PROCEDURE 3
Feb.1999

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