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Datasheet File OCR Text: |
Power Transistors 2SD1474 Silicon NPN epitaxial planar type For power amplification with high forward current transfer ratio 0.70.1 10.00.2 5.50.2 2.70.2 4.20.2 Unit: mm 4.20.2 s Features q q q High forward current transfer ratio hFE which has satisfactory linearity High emitter to base voltage VEBO Full-pack package which can be installed to the heat sink with one screw (TC=25C) Ratings 100 60 15 12 6 3 40 2 150 -55 to +150 Unit V V V A A A W C C 7.50.2 16.70.3 3.10.1 4.0 1.40.1 1.30.2 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IB PC Tj Tstg 14.00.5 0.5 +0.2 -0.1 0.80.1 2.540.25 5.080.5 1 2 3 1:Base 2:Collector 3:Emitter TO-220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time (TC=25C) Symbol ICBO IEBO VCEO hFE* VCE(sat) fT ton tstg tf Conditions VCB = 100V, IE = 0 VEB = 15V, IC = 0 IC = 25mA, IB = 0 VCE = 4V, IC = 1A IC = 5A, IB = 0.1A VCE = 12V, IC = 0.5A, f = 10MHz IC = 5A, IB1 = 0.1A, IB2 = - 0.1A, VCC = 50V 30 0.3 1.5 0.6 60 300 2000 0.5 V MHz s s s min typ max 100 100 Unit A A V *h FE Rank classification Q P Rank hFE 300 to 1200 800 to 2000 1 Power Transistors PC -- Ta 80 6 TC=25C (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) 2SD1474 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 10 VCE(sat) -- IC IC/IB=50 Collector power dissipation PC (W) 70 60 50 40 30 20 10 0 0 20 40 (2) (3) (1) 5 3 Collector current IC (A) IB=10mA 4 9mA 8mA 7mA 6mA 5mA 2 4mA 3mA 2mA 1 1mA 0 1 TC=100C 0.3 25C -25C 0.1 3 0.03 60 80 100 120 140 160 0 2 4 6 8 10 12 0.01 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 10 hFE -- IC IC/IB=50 105 VCE=2V 1000 300 100 30 10 3 1 0.3 10 0.01 0.03 0.1 0.01 0.03 fT -- IC VCE=12V f=10MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 3 104 1 TC=-25C 100C TC=100C 103 25C -25C 0.3 25C 0.1 102 0.03 0.01 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) Cob -- VCB 10000 100 IE=0 f=1MHz TC=25C 30 ton, tstg, tf -- IC Pulsed tw=1ms Duty cycle=1% IC/IB=50 (IB1=-IB2) VCC=50V TC=25C tstg tf ton Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C ICP IC DC Collector output capacitance Cob (pF) 3000 1000 300 100 30 10 3 1 0.1 Switching time ton,tstg,tf (s) Collector current IC (A) 10 3 1 0.3 0.1 0.03 0.01 10 3 1 0.3 0.1 0.03 0.01 t=10ms 0.3 1 3 10 30 100 0 1 2 3 4 5 6 7 8 1 3 10 30 100 300 1000 Collector to base voltage VCB (V) Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Rth(t) -- t 103 (1) Without heat sink (2) With a 100 x 100 x 2mm Al heat sink 2SD1474 Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-2 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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