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| SI7540DP New Product Vishay Siliconix N- and P-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 12 FEATURES ID (A) 11.8 9.8 -8.9 -6.9 rDS(on) (W) 0.017 @ VGS = 4.5 V 0.025 @ VGS = 2.5 V 0.032 @ VGS = -4.5 V D TrenchFETr Power MOSFET D New Low Thermal Resistance PowerPAKt Package with Low 1.07-mm Profile D PWM Optimized for High Efficiency APPLICATIONS D Point-of-Load Synchronous Rectifier - 5-V or 3.3-V BUS Step Down - Qg Optimized for 500-kHz Operation D Synchronous Buck, Shoot-Thru Resistant D1 S2 P-Channel -12 0.053 @ VGS = -2.5 V PowerPAKt SO-8 6.15 mm S1 1 2 5.15 mm G1 S2 G2 G2 3 4 D1 G1 8 7 D1 D2 6 5 D2 S1 N-Channel MOSFET D2 P-Channel MOSFET Bottom View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) N-Channel Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS 2.9 3.5 2.2 1.1 1.4 0.9 -55 to 150 P-Channel 10 secs Steady State -12 "8 V -5.7 -4.6 A -2.9 3.5 2.2 -1.1 1.4 0.9 W _C Symbol VDS VGS 10 secs Steady State 12 "8 Unit 11.8 9.5 7.6 6.1 20 - 8.9 -7.1 Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS N-Channel Parameter t v 10 sec Maximum Junction-to-Ambienta Maximum Junction-to-Case (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 www.vishay.com Steady State Steady State RthJA RthJC P-Channel Typ 26 60 3.9 Symbol Typ 26 60 3.9 Max 35 85 5.5 Max 35 85 5.5 Unit _C/W C/W 1 SI7540DP Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V VDS = 9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = 9.6 V, VGS = 0 V, TJ = 55_C VDS = -9.6 V, VGS = 0 V, TJ = 55_C On-State Drain Currenta VDS w 5 V, VGS = 4.5 V ID(on) VDS p -5 V, VGS = -4.5 V VGS = 4.5 V, ID = 11.8 A Drain-Source On-State Resistancea VGS = -4.5 V, ID = -8.9 A rDS(on) VGS = 2.5 V, ID = 9.8 A VGS = -2.5 V, ID = -6.9 A Forward Transconductancea VDS = 5 V, ID = 11.8 A gfs VDS = -5 V, ID = -8.9 A IS = 2.9 A, VGS = 0 V VSD IS = -2.9 A, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 20 -20 0.014 0.026 0.020 0.043 32 23 0.77 -0.8 1.2 -1.2 V S 0.017 0.032 0.025 0.053 W A 0.6 -0.6 1.5 V -1.5 "100 "100 1 -1 5 -5 mA m nA Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb N-Ch Total Gate Charge Qg N-Channel VDS = 6 V, VGS = 4.5 V, ID = 11.8 A Gate-Source Charge Qgs P-Channel VDS = -6 V, VGS = -4.5 V, ID = -8.9 A P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Gate Resistance RG P-Ch N-Ch Turn-On Delay Time td(on) N-Channel VDD = 6 V, RL = 6 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W P-Channel VDD = -6 V, RL = 6 W ID ^ -1 A, VGEN = -4.5 V, RG = 6 W P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch Fall Time Source-Drain Reverse Recovery Time tf IF = 2.9 A, di/dt = 100 A/ms trr IF = -2.9 A, di/dt = 100 A/ms P-Ch N-Ch P-Ch 3.5 30 35 50 42 60 54 25 17 40 40 45 55 75 65 90 85 40 30 80 80 ns 11.5 13 3.2 nC 4.1 2.5 1.9 1.7 W 17 20 Gate-Drain Charge Qgd Rise Time tr Turn-Off Delay Time td(off) Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. www.vishay.com 2 Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 SI7540DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 VGS = 5 thru 2.5 V 16 I D - Drain Current (A) I D - Drain Current (A) 16 20 Vishay Siliconix N-CHANNEL Transfer Characteristics 12 2V 8 12 8 TC = 125_C 4 25_C -55 _C 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.05 r DS(on) - On-Resistance ( W ) 2500 Capacitance C - Capacitance (pF) 0.04 2000 Ciss 1500 0.03 VGS = 2.5 V 0.02 VGS = 4.5 V 0.01 1000 Coss 500 Crss 0.00 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 11.8 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 11.8 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 6 9 12 15 1.2 2 1.0 1 0.8 0 0 3 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 www.vishay.com 3 SI7540DP Vishay Siliconix New Product N-CHANNEL On-Resistance vs. Gate-to-Source Voltage 0.05 TJ = 150_C 10 I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.04 ID = 5 A 0.03 ID = 11.8 A 0.02 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 25_C 0.01 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 40 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 32 24 -0.2 16 -0.4 8 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited 1 ms 10 ms 1 ID(on) Limited 100 ms 1s 10 s dc 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 SI7540DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix N-CHANNEL 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 www.vishay.com 5 SI7540DP Vishay Siliconix New Product P-CHANNEL Transfer Characteristics 20 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 20 16 I D - Drain Current (A) VGS = 5 thru 2.5 V I D - Drain Current (A) 16 12 12 8 2V 8 TC = 125_C 4 25_C 4 1.5 V 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -55 _C 1.5 2.0 2.5 3.0 0 0.0 0.5 1.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.15 r DS(on) - On-Resistance ( W ) 2500 Capacitance Ciss C - Capacitance (pF) 0.12 2000 0.09 1500 0.06 VGS = 2.5 V VGS = 4.5 V 0.03 1000 Coss 500 Crss 0.00 0 4 8 12 16 20 0 0 2 4 6 8 10 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 5 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 8.9 A 4 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 8.9 A 1.4 3 r DS(on) - On-Resistance (W) (Normalized) 8 12 16 1.2 2 1.0 1 0.8 0 0 4 Qg - Total Gate Charge (nC) 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 6 Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 SI7540DP New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 20 TJ = 150_C 10 I S - Source Current (A) r DS(on) - On-Resistance ( W ) 0.12 ID = 3 A 0.09 ID = 8.9 A 0.06 0.15 Vishay Siliconix P-CHANNEL On-Resistance vs. Gate-to-Source Voltage TJ = 25_C 0.03 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0.00 0 1 2 3 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.4 40 Single Pulse Power 0.2 V GS(th) Variance (V) ID = 250 mA Power (W) -0.0 32 24 -0.2 16 -0.4 8 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 100 600 TJ - Temperature (_C) Safe Operating Area, Junction-To-Ambient 100 rDS(on) Limited 10 I D - Drain Current (A) IDM Limited 1 ms 10 ms 1 ID(on) Limited 100 ms 1s 10 s dc 0.1 TA = 25_C Single Pulse BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 www.vishay.com 7 SI7540DP Vishay Siliconix New Product P-CHANNEL TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 Square Wave Pulse Duration (sec) t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 60_C/W 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted t1 t2 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Case 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10- 4 10- 3 10- 2 Square Wave Pulse Duration (sec) 10- 1 1 www.vishay.com 8 Document Number: 71911 S-22387--Rev.. C, 16-Dec-02 |
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