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| SI1400DL Vishay Siliconix N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 0.235 @ VGS = 2.5 V 1.3 rDS(on) (W) 0.150 @ VGS = 4.5 V ID (A) 1.7 SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code ND D 2 5 D XX YY Lot Traceability and Date Code Part # Code G 3 4 S Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a _ Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C TA = 25_C TA = 85_C IDM IS PD TJ, Tstg 0.8 0.625 0.40 -55 to 150 Symbol VDS VGS ID 5 secs 20 "12 1.7 1.2 5 Steady State Unit V 1.6 1.0 A 0.8 0.568 0.295 W _C THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71179 S-05630--Rev. B, 11-Feb-02 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 165 180 105 Maximum 200 220 130 Unit _C/W C/W 1 SI1400DL Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Diode Forward Voltagea VGS(th) IGSS IDSS ID(on) rDS(on) gfs VSD VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "12 V VDS = 16 V, VGS = 0 V VDS = 16 V, VGS = 0 V, TJ = 85_C VDS w 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1.7 A VGS = 2.5 V, ID = 1.3 A VDS = 10 V, ID = 1.7 A IS = 0.8 A, VGS = 0 V 2 0.123 0.195 5 0.78 1.1 0.150 0.235 S V 0.6 "100 1 5 V nA mA m A W Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = 0.8 A, di/dt = 100 A/ms VDD = 10 V, RL = 20 W ID ^ 1 A, VGEN = 4.5 V, RG = 6 W VDS = 10 V, VGS = 4.5 V, ID = 1.7 A 2.1 0.3 0.4 10 30 14 8 30 17 50 25 15 50 ns 4.0 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 5 2.5 V 4 I D - Drain Current (A) VGS = 4.5 thru 3 V I D - Drain Current (A) 4 5 Transfer Characteristics 3 3 2 2V 2 TC = 125_C 1 25_C 1 1.5 V 0 0.0 -55_C 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.5 1.0 1.5 2.0 2.5 3.0 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) www.vishay.com 2 Document Number: 71179 S-05630--Rev. B, 11-Feb-02 SI1400DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 0.5 r DS(on) - On-Resistance ( W ) 300 Capacitance C - Capacitance (pF) 0.4 240 Ciss 180 0.3 VGS = 2.5 V 0.2 VGS = 4.5 V 0.1 120 Coss 60 Crss 0.0 0 1 2 3 4 5 0 0 4 8 12 16 20 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 4.5 V GS - Gate-to-Source Voltage (V) VDS = 10 V ID = 1.7 A 3.6 1.8 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1.7 A r DS(on) - On-Resistance (W) (Normalized) 1.6 1.4 2.7 1.2 1.8 1.0 0.9 0.8 0.0 0.0 0.5 1.0 1.5 2.0 2.5 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 0.40 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) 0.32 ID = 1.7 A I S - Source Current (A) 0.24 1 TJ = 150_C 0.16 TJ = 25_C 0.08 0.1 0.0 0.00 0.2 0.4 0.6 0.8 1.0 1.2 0 1 2 3 4 5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Document Number: 71179 S-05630--Rev. B, 11-Feb-02 www.vishay.com 3 SI1400DL Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 10 Single Pulse Power 0.2 V GS(th) Variance (V) 8 ID = 250 mA Power (W) 6 -0.0 -0.2 4 -0.4 2 -0.6 -50 -25 0 25 50 75 100 125 150 0 0.01 0.1 1 Time (sec) 10 30 TJ - Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 PDM 2. Per Unit Base = RthJA =400_C/W Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com 4 Document Number: 71179 S-05630--Rev. B, 11-Feb-02 |
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