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Philips Semiconductors
Product specification
Rectifier diodes ultrafast
FEATURES
* Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance
BYT79 series
SYMBOL
QUICK REFERENCE DATA VR = 300 V/ 400 V/ 500 V
k 1
a 2
VF 1.05 V IF(AV) = 14 A trr 60 ns
GENERAL DESCRIPTION
Ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power supplies. The BYT79 series is supplied in the conventional leaded SOD59 (TO220AC) package.
PINNING
PIN 1 2 tab DESCRIPTION cathode anode cathode
SOD59 (TO220AC)
tab
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRRM VR IF(AV) IFSM PARAMETER Peak repetitive reverse voltage Continuous reverse voltage Average forward current1 Non-repetitive peak forward current. Storage temperature Operating junction temperature CONDITIONS BYT79 Tmb 147C square wave; = 0.5; Tmb 117 C t = 10 ms t = 8.3 ms sinusoidal; with reapplied VRRM(max) -40 MIN. -300 300 300 MAX. -400 400 400 14 130 143 150 150 -500 500 500 UNIT V V A A A C C
Tstg Tj
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. TYP. 60 MAX. 2.0 UNIT K/W K/W
1 Neglecting switching and reverse current losses September 1998 1 Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
ELECTRICAL CHARACTERISTICS
Tj = 25 C unless otherwise stated SYMBOL VF IR Qs trr Irrm Vfr PARAMETER Forward voltage Reverse current Reverse recovery charge Reverse recovery time Peak reverse recovery current Forward recovery voltage CONDITIONS IF = 15 A; Tj = 150C IF = 30 A VR = VRRM VR = VRRM; Tj = 100 C IF = 2 A to VR 30 V; dIF/dt = 20 A/s IF = 1 A to VR 30 V; dIF/dt = 100 A/s IF = 10 A to VR 30 V; dIF/dt = 50 A/s; Tj = 100C IF = 10 A; dIF/dt = 10 A/s MIN. -
BYT79 series
TYP. 0.90 1.17 5.0 0.2 50 50 4.0 2.5
MAX. 1.05 1.38 50 0.8 60 60 5.2 -
UNIT V V A mA nC ns A V
I
dI F dt
F
25
PF / W
Vo = 0.9075 V Rs = 0.0095 Ohms
BYT79
Tmb(max) / C 100 D = 1.0 110
20
t
0.5
rr
15
time
10 0.1
120 0.2 130
I tp D= tp T
Q I R I
s
10%
100%
5
140
T t
rrm
0
0
5
10 15 IF(AV) / A
20
150 25
Fig.1. Definition of trr, Qs and Irrm
Fig.3. Maximum forward dissipation PF = f(IF(AV)); square wave where IF(AV) =IF(RMS) x D.
PF / W
Vo = 0.9075 V Rs = 0.0095 Ohms
I
F
20
BYT79
Tmb(max) / C 110
a = 1.57 15 2.2 1.9 2.8 10 4 130 120
time VF
5
140
V VF time
fr
0 0 5 10 150 15
IF(AV) / A
Fig.2. Definition of Vfr
Fig.4. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV).
September 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
BYT79 series
1000
trr / ns
1000
Qs / nC
IF=20 A
IF = 20 A
100 1A
100
2A
10 Tj = 25 C Tj = 100 C 1 1 10 dIF/dt (A/us) 100
10
1
1.0
10 -dIF/dt (A/us)
100
Fig.5. Maximum trr at Tj = 25C and 100C
Fig.8. Maximum Qs at Tj = 25C
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF= 20 A 1 IF=1A
1
0.1
0.1
0.01
P D tp D= tp T t
Tj = 25 C Tj = 100 C 0.01 1 10 -dIF/dt (A/us) 100
0.001 1us 10us
T
100us 1ms 10ms 100ms 1s pulse width, tp (s) BYV79E
10s
Fig.6. Maximum Irrm at Tj = 25C and 100C.
Fig.9. Transient thermal impedance Zth = f(tp)
50
IF / A Tj = 25 C Tj = 150 C
BYT79
40
30 typ 20 max
10
0
0
0.5
1 VF / V
1.5
2
Fig.7. Typical and maximum forward characteristic IF = f(VF); parameter Tj
September 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
MECHANICAL DATA
Dimensions in mm Net Mass: 2 g
BYT79 series
4,5 max
10,3 max
1,3
3,7 2,8
5,9 min
3,0 max not tinned 3,0
15,8 max
13,5 min
1,3 max 1 (2x)
2
0,9 max (2x)
0,6
2,4
5,08
Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base.
Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8".
September 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes ultrafast
DEFINITIONS
Data sheet status Objective specification Product specification Limiting values
BYT79 series
This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
September 1998
5
Rev 1.300

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