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| @vic SOT-23 Plastic-Encapsulate Transistors SOT-23 AV9012LT1 FEATURES Power dissipation PCM: TRANSISTOR (PNP) 1. BASE 2. EMITTER 3. COLLECTOR 1. 0 0.3 W (Tamb=25) 0. 95 2. 4 1. 3 0. 95 Collector current ICM: -0.5 A Collector-base voltage V(BR)CBO: -40 V Operating and storage junction temperature range TJ, Tstg: -55 to +150 ELECTRICAL CHARACTERISTICS (Tamb=25 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) VCE=-1V, IC=-500mA IC=-500 mA, IB= -50mA IC=-500 mA, IB= -50mA VCE=-6V, IC= -20mA 2. 9 1. 9 Unit: mm unless otherwise specified) Test conditions MIN -40 -25 -5 -0.1 -0.1 -0.1 120 40 -0.6 -1.2 150 V V MHz 400 TYP MAX UNIT V V V Ic= -100A, IE=0 Ic= -1mA, IB=0 IE=-100A, IC=0 VCB=-40 V, IE=0 VCE=-20V, IB=0 VEB= -5V, IC=0 VCE=-1V, IC= -50mA 0. 4 A A A fT f=30MHz H 200-350 CLASSIFICATION OF hFE(1) Rank Range L 120-200 J 300-400 DEVICE MARKING S9012LT1=2T1 Copyright @vic Electronics Corp. Website http://www.avictek.com |
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