 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| STB40NF03L N-CHANNEL 30V - 0.020 - 40A D2PAK STripFETTM POWER MOSFET TYPE STB40NF03L s s VDSS 30 V RDS(on) <0.022 ID 40 A TYPICAL RDS(on) = 0.020 LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. 1 D2PAK TO-263 (suffix"T4") ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Ptot EAS (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuos) at TC = 25C Drain Current (continuos) at TC = 100C Drain Current (pulsed) Total Dissipation at TC = 25C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 30 20 40 28 160 70 0.46 250 -60 to 175 175 (1) Starting TJ = 25 oC, ID = 20A, VDD = 15V Unit V V V A A A W W/C m/J C C 1/8 (*)Pulse width limited by safe operating area. December 2000 STB40NF03L THERMAL DATA Rthj-case Rthj-amb Tj Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.1 62.5 300 C/W C/W C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA VDS = Max Rating VDS = Max Rating TC = 125 C VGS = 20 V ON (*) Symbol VGS(th) IDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 20 A ID = 20 A 40 Min. 1 Typ. 1.7 0.018 0.028 Max. 2.5 0.022 0.035 Unit V A VDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC Symbol gfs (*) Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitances Test Conditions VDS>ID(on) x RDS(on)max ID=20A VDS = 25V f = 1 MHz VGS = 0 Min. Typ. 20 830 230 92 Max. Unit S pF pF pF Ciss Coss Crss 2/8 STB40NF03L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol td(on) tr Qg Qgs Qgd Parameter Test Conditions Min. Typ. 35 205 18 7 8 23 Max. Unit ns ns nC nC nC Turn-on Delay Time Rise Time VDD = 15 V ID = 20 A VGS = 4.5 V RG = 4.7 (Resistive Load, see fig.3) Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD=24V ID=40A VGS=5V SWITCHING OFF Symbol td(off) tf td(off) tf tc Parameter turn-off Delay Time Fall Time Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 15 V ID = 20 A VGS = 4.5 V RG = 4.7 (Resistive Load, see fig.3) Vclamp = 24 V ID = 20 A RG = 4.7 VGS = 4.5 V (Inductive Load, see fig.5) Min. Typ. 90 240 150 155 340 Max. Unit ns ns ns ns ns SOURCE DRAIN DIODE Symbol ISD ISDM (*) VSD (*) trr Qrr Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 40 A VGS = 0 65 72 2 Test Conditions Min. Typ. Max. 40 160 1.5 Unit A A V ns nC A IRRM ISD = 40 A di/dt = 100 A/s VDD = 15 V Tj = 150 C (see test circuit, Figure 5) (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area. Safe Operating Area Thermal Impedance 3/8 STB40NF03L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STB40NF03L Normalized Gate Threshold Voltage vs Temperature Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STB40NF03L Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 STB40NF03L D2PAK MECHANICAL DATA DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10 8.5 4.88 15 1.27 1.4 2.4 0.4 0 8 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 10.4 0.393 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 inch TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 0.315 0.334 0.208 0.625 0.055 0.068 0.126 0.015 7/8 STB40NF03L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8 |
Price & Availability of STB40NF03L
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |