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RF2480
5
Typical Applications
* Dual-Band CDMA Base Stations * TDMA/TDMA-EDGE Base Stations * GSM-EDGE/EGSM Base Stations * W-CDMA Base Stations * WLAN and WLL Systems * TETRA Systems
DIRECT QUADRATURE MODULATOR
Product Description
The RF2480 is a monolithic integrated quadrature modulator IC capable of universal direct modulation for highfrequency AM, PM, or compound carriers. This low-cost IC features excellent linearity, noise floor, and over-temperature carrier suppression performance. The device implements differential amplifiers for the modulation inputs, 90 carrier phase shift network, carrier limiting amplifiers, two matched double-balanced mixers, summing amplifier, and an output RF amplifier which will drive 50 from 800MHz to 2500MHz. Component matching is used to obtain excellent amplitude balance and phase accuracy.
0.157 0.150
-A0.008 0.004
5
MODULATORS AND UPCONVERTERS
0.393 0.386
0.018 0.014 0.050
0.244 0.229 8 MAX 0 MIN 0.009 0.007
0.068 0.053
NOTES: 1. Shaded lead is Pin 1. 2. All dimensions are excluding mold flash. 3. Lead coplanarity - 0.005 with respect to datum "A".
0.034 0.016
Optimum Technology Matching(R) Applied
Si BJT Si Bi-CMOS
u
Package Style: SOIC-16
GaAs HBT SiGe HBT
GaAs MESFET Si CMOS
Features
* Typical Carrier Suppression>35dBc over
I S IG Q S IG GND1 GND1 GND1 VCC2 GND1 RF OUT
I REF Q REF GND2 GND2 GND2 LO VCC1 PD
1 2 3 4 5 6 7 8 POW ER CONTROL
16 15 14
temperature with highly linear operation * Single 5V Power Supply * Integrated RF quadrature network * Digitally controlled Power Down mode * 800MHz to 2500MHz operation
13 12 11 10 9
-4 5 +45
Ordering Information
RF2480 RF2480 PCBA Direct Quadrature Modulator Fully Assembled Evaluation Board
Functional Block Diagram
RF Micro Devices, Inc. 7628 Thorndike Road Greensboro, NC 27409, USA
Tel (336) 664 1233 Fax (336) 664 0454 http://www.rfmd.com
Rev A3 011019
5-29
RF2480
Absolute Maximum Ratings Parameter
Supply Voltage Input LO and RF Levels Operating Ambient Temperature Storage Temperature
Rating
-0.5 to +7.5 +10 -40 to +85 -40 to +150
Unit
VDC dBm C C
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate at the time of this printing. However, RF Micro Devices reserves the right to make changes to its products without notice. RF Micro Devices does not assume responsibility for the use of the described product(s).
Parameter
Carrier Input
Frequency Range Power Level Input VSWR
Specification Min. Typ. Max.
800 -6 4.5:1 2:1 2:1 DC 3.0 VREF 1.0 0.2 3 30 40 -3 -6 0 -5 +2 250 2500 +6
Unit
MHz dBm
Condition
T=25C, VCC =5V
5
MODULATORS AND UPCONVERTERS
At 900MHz unmatched At 1800MHz unmatched At 2500MHz unmatched MHz V V dB k A dBm dBm LO=800MHz, -5dBm; SSB TETRA I&Q Amplitude=2VPP Over operating temperature. TETRA I&Q Amplitude=1.1VPP with an ACPR of -47dBc. Over operating temperature. TETRA modulation applied with POUT =-5dBm. Over operating temperature. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. 2kHz offset (9kHz, 11kHz) at -6dBm/tone. Over operating temperature. Unadjusted performance. Unadjusted performance. 26MHz offset with TETRA signal applied POUT =-5dBm.
Modulation Input
Frequency Range Reference Voltage (VREF) Maximum Modulation (I&Q) Gain Asymmetry Quadrature Phase Error Input Resistance Input Bias Current
RF Output (~800MHz)
Maximum Output Power High-Linearity Output Power
Adjacent Channel Power Rejection Output P1dB IM3 Suppression IM5 Suppression IM7 Suppression Carrier Suppression Sideband Suppression Broadband Noise Floor
-47 +2 -39 -49 -49 -25 -25
-52 +3 -40 -59 -71 -30 -30 -150
dBc dBm dBc dBc dBc dBc dBc dBm/Hz
-145
5-30
Rev A3 011019
RF2480
Parameter
RF Output (~900MHz)
Maximum Output Power High-Linearity Output Power Carrier Suppression 0 50 +4 -11 dBm dBm dB
Specification Min. Typ. Max.
Unit
Condition
LO=880MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25C; POUT =-11dBm (meets CDMA base station requirements); optimized I,Q DC offsets Over Temperature (Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-11dBm) T=25C; POUT =-11dBm; optimized I,Q DC offsets Over Temperature (Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-11dBm) At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF. LO=2000MHz, -5dBm; SSB I&Q Amplitude=2VPP I&Q Amplitude=0.325VPP T=25C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-17dBm T=25C; POUT =-17dBm; optimized I,Q DC offsets Temperature cycled from -40C to +85C after optimization at T=25C; POUT =-17dBm At 20MHz offset, VCC =5V; Tied to VREF: ISIG, QSIG, IREF, and QREF.
35
dB
Sideband Suppression
50 35
dB dB
RF Output (~2000MHz)
Maximum Output Power High-Linearity Output Power Carrier Suppression -7 50 35 Sideband Suppression 50 40 Output Impedance Broadband Noise Floor 58-j11 -158.0 -3 -17 dBm dBm dB dB dB dB dBm/Hz
Power Down
Turn On/Off Time PD Input Resistance Power Control "ON" Power Control "OFF" 100 50 2.8 1.0 1.2 5 4.5 Current 50 25 6.0 ns k V V V V mA A
Threshold voltage Threshold voltage Specifications Operating Limits Operating Power Down
Power Supply
Voltage
Rev A3 011019
5-31
MODULATORS AND UPCONVERTERS
Output Impedance Broadband Noise Floor
13-j:25 -153.0
dBm/Hz
5
RF2480
Pin 1 Function I REF Description
Reference voltage for the I mixer. This voltage should be the same as the DC voltage supplied to the I SIG pin. A voltage of 3.0V is recommended. The SIG and REF inputs are inputs of a differential amplifier. Therefore the REF and SIG inputs are interchangeable. If swapping the I SIG and I REF pins, the Q SIG and Q REF also need to be swapped to maintain the correct phase. It is also possible to drive the SIG and REF inputs in a balanced mode. This will increase the gain. For optimum carrier suppression, the DC voltages on I REF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal DC offsets; for optimum sideband suppression, phase and signal amplitude on IREF, Q REF, I SIG and Q SIG should be adjusted slightly to compensate for inherent undesired internal offsets. See RFMD AN0001 for more detail. Reference voltage for the Q mixer. This voltage should be the same as the DC voltage supplied to the Q SIG pin. A voltage of 3.0V is recommended. See pin 1 for more details.
Interface Schematic
I SIG 100 I REF 100
425
425
2
Q REF
Q SIG 100
Q REF 100
5
MODULATORS AND UPCONVERTERS
425
425
3 4 5 6 7 8
GND2 GND2 GND2 LO VCC1 PD
Ground connection of the LO phase shift network. This pin should be connected directly to the ground plane. Same as pin 3. Same as pin 3. The input of the phase shifting network. This pin has an internal DC blocking capacitor. This port is voltage driven so matching at different frequencies is not required. Power supply for all circuits except the RF output stage. An external capacitor is needed if no other low frequency bypass capacitor is nearby. Power Down control. When this pin is "low", all circuits are shut off. A "low" is typically 1.2V or less at room temperature.When this pin is "high" (VCC), all circuits are operating normally. If PD is below VCC, output power and performance will be degraded. Operating in this region is not recommended, although it might be useful in some applications where power control is required. RF Output. This pin has an internal DC blocking capacitor. At some frequencies, external matching may be needed to optimize output power.
LO
VCC 200 PD
9
RF OUT
RF OUT
10 11 12 13 14
GND3 VCC2 GND1 GND1 GND1
Ground connection for the RF output stage. This pin should be connected directly to the ground plane. Power supply for the RF output amplifier. An external capacitor is needed if no other low frequency bypass capacitor is near by. Ground connection for the LO and baseband amplifiers, and for the mixers. This pin should be connected directly to the ground plane. Same as pin 12. Same as pin 12.
5-32
Rev A3 011019
RF2480
Pin 15 Function Q SIG Description
Baseband input to the Q mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details. Baseband input to the I mixer. This pin is DC-coupled. Maximum output power is obtained when the input signal has a peak to peak amplitude of 2V; for highly linear operation, the input signal (and output power) must be reduced appropriately. The recommended DC level for this pin is 3.0V. The peak minimum voltage on this pin (VREF - peak modulation amplitude) should never drop below 2.0V. The peak maximum voltage on this pin (VREF + peak modulation amplitude) should never exceed 4.0V. See pin 1 for more details.
Interface Schematic
Q SIG 100 Q REF 100
425
425
16
I SIG
I SIG 100
I REF 100
425
425
5
MODULATORS AND UPCONVERTERS
Application Schematic DC-Coupled
I R EF
1 00 n F 1 2 1 00 n F 3 4 LO IN VCC 5 6 7 8 PD 1 00 n F POW ER CONTROL 16 15 14 13 12 11 10 9 10 0 nF I S IG Q S IG
Q REF
VCC
-4 5 +45
1 00 n F
RF OUT
Rev A3 011019
5-33
RF2480
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
P1 P1-1 1 2 3 VCC GND NC P2-1 P2 1 2 3 REF GND NC
50 strip P2-1 C1 100 nF 1 2 3 4 5 LO IN J1 P1-1 C2 100 nF 50 strip 6 7 8 POWER CONTROL
-45 +45
16 15 14 13 12 11 10 50 strip 9
2480400-
I SIG J4 Q SIG J3
50 strip
5
MODULATORS AND UPCONVERTERS
C3 100 nF
P1-1
RF OUT J2
5-34
Rev A3 011019
RF2480
Evaluation Board Layout Board Size 1.510" x 1.510"
Board Thickness 0.031", FR-4
5
MODULATORS AND UPCONVERTERS
Rev A3 011019
5-35
5
MODULATORS AND UPCONVERTERS
5-36
RF2480
Rev A3 011019

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