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| MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-HB * * * * * IC Collector current .......................... 20A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm (30.5) 11 7 15 25.5 7 15 25.5 2 7 (23.5) 5.5 1.2 Fig. 1 4 2.8 Fig. 2 8.0 6.35 1.65 3.4 BvP EvP v BvN EvN 18 28 45 8.6 1.5 5.5 76 93 105 Tab#250, t=0.8(Fig. 2) Tab#110, t=0.5(Fig. 1) P BuP EuP u BuN EuN N BwP EwP w BwN EwN (22.45) 7 13 LABEL Note: All Transistor Units are Darlingtons. 1.5 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 20 20 83 1 200 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 90 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=20A, IB=80mA -IC=20A (diode forward voltage) IC=20A, VCE=2V Min. -- -- -- -- -- -- 250 -- VCC=300V, IC=20A, IB1=120mA, IB2=-400mA -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 40 2.0 2.5 1.5 -- 1.5 12 2.0 1.5 2.5 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 COLLECTOR CURRENT IC (A) Tj=25C 40 IB=400mA IB=200mA IB=80mA IB=40mA 20 IB=20mA DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 2 VCE=5.0V DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 30 VCE=2.0V 10 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 0 1 2 3 4 5 VCE (V) COLLECTOR-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.0 1.4 1.8 2.2 2.6 VBE (V) 3.0 VCE=2.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=80mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 ton, ts, tf (s) Tj=25C Tj=125C 4 IC=25A 3 2 10 1 7 5 4 3 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) VCC=300V IB1=120mA IB2=-400mA 3 ts 2 SWITCHING TIME 1 IC=15A IC=20A 0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 tf 10 0 7 5 ton 4 3 10 0 2 3 4 5 7 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 2 IC (A) BASE CURRENT IB (A) COLLECTOR CURRENT Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 ts, tf (s) 10 1 7 5 4 3 2 10 0 7 5 4 3 10 -1 VCC=300V IB1=120mA IC=20A Tj=25C Tj=125C ts REVERSE BIAS SAFE OPERATING AREA 50 Tj=125C COLLECTOR CURRENT IC (A) 40 IB2=-3A IB2=-0.5A SWITCHING TIME 30 20 tf 10 2 3 4 5 7 10 0 2 3 4 5 7 10 1 0 0 100 200 300 400 500 600 700 800 VCE (V) BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 100 100s 90 DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) SECOND BREAKDOWN AREA 50 s 1m 20 s 10 0 7 5 3 2 TC=25C NON-REPETITIVE -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 2.0 1.8 1.6 Zth (j-c) (C/ W) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) s 5m s m 10 DC 0 s COLLECTOR DISSIPATION 0 20 40 60 80 100 120 140 160 TC (C) CASE TEMPERATURE 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.8 1.2 1.6 2.0 2.4 10 0 0.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM20TD-HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 10 2 VCC=300V IB1=120mA IB2=-400mA Qrr trr (s) Irr trr 10 1 Tj=25C Tj=125C 2 3 4 5 7 10 1 10 0 2 3 4 5 7 10 2 CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 710 1 3.2 2.8 2.4 Zth (j-c) (C/ W) 2.0 1.6 1.2 0.8 0.4 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 TIME (s) Feb.1999 |
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