 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Product Datasheet January 21, 2002 18-27 GHz 1W Power Amplifier Key Features * * * * * * * TGA1135B-SCC 0.25 um pHEMT Technology 14 dB Nominal Gain at 23GHz 29 dBm Nominal P1dB 37dBm OTOI typical Typical 15dB Input/Output RL Bias 6 - 7V @ 480 mA On-chip power detector diode Chip Dimensions 2.641 mm x 1.480 mm Primary Applications * * * Point-to-Point Radio Point-to-Multipoint Communications Ka Band Sat-Com TGA1135B Fixtured Amplifier Typical Small Signal Data Wafer 993150303, 6V/540mA Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint's proven 0.25 um Power pHEMT process. The TGA11135B is designed to support a variety of millimeter wave applications including point-topoint digital radio and LMDS/LMCS. The balanced configuration two stage design consists of a pair of 600um input devices driving a 4 x 600um output stage. Power combining is achieved with on-chip Lange couplers. The TGA1135B-SCC provides 29 dBm nominal output power at 1dB compression across 18 - 27GHz. Typical small signal gain is 14 dB across the band. Input and output return loss is typically -15dB. An on-chip power detector and reference diode may be used for power monitoring/control and bias control loops. P1dB (dBm) S21 (dB) 18 16 14 12 10 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TGA1135B Nominal Output Power Wafer 993150303, Idq=540mA 32 31.5 31 30.5 30 29.5 29 28.5 28 27.5 27 16 17 18 19 20 21 22 23 24 25 26 27 28 29 Frequency (GHz) Note: 1 dB of compression not reached on some parts at 27, 27.5 GHz VD = 7V The TGA1135B-SCC requires minimum off-chip components. Each device is 100% DC and RF tested on-wafer to ensure performance compliance. The device is available in chip form. VD = 6V TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 1 Product Datasheet January 21, 2002 TGA1135B-SCC TABLE I MAXIMUM RATINGS SYMBOL V I I + + - PARAMETER 4/ POSITIVE SUPPLY VOLTAGE POSITIVE SUPPLY CURRENT NEGATIVE SUPPLY CURRENT INPUT CONTINUOUS WAVE POWER POWER DISSIPATION OPERATING CHANNEL TEMPERATURE MOUNTING TEMPERATURE (30 SECONDS) STORAGE TEMPERATURE VALUE 8V 720 mA 28.2 mA 23 dBm 5.0 W 150 0C 320 0C -65 to 150 0C NOTES 1/ PIN PD TCH TM T STG 2/ 3/ 1/ 2/ 3/ 4/ Total current for all stages. These ratings apply to each individual FET. Junction operating temperature will directly affect the device median time to failure (TM). For maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. These ratings represent the maximum operable values for the device. TABLE II DC SPECIFICATIONS (100%) (T A = 25 C + 5 C) NOTES SYMBOL IDSS1 GM1 1/ 1/ 1/ 1/ 1/ 1/ 2/ |VP1| |VP2| |VP3-6| |VBVGD1| |VBVGS1| VP, VBVGD, and VBVGS are negative. The measurement conditions are subject to change at the manufacture's discretion (with appropriate notification to the buyer). TEST CONDITIONS 2/ MIN STD STD STD STD STD STD STD 60 132 0.5 0.5 0.5 13 13 LIMITS MAX 282 318 1.5 1.5 1.5 30 30 mA mS V V V V V UNITS TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 2 Product Datasheet January 21, 2002 TGA1135B-SCC TABLE IV RF SPECIFICATIONS (T A = 25C + 5C) NOTE TEST MEASUREMENT CONDITIONS 7V @ 460mA 18 - 27 GHz 18 - 27 GHz VALUE MIN 12 27 TYP 14 29 MAX dB dBm UNITS SMALL-SIGNAL GAIN MAGNITUDE POWER OUTPUT AT 1 dB GAIN COMPRESSION INPUT RETURN LOSS MAGNITUDE OUTPUT RETURN LOSS MAGNITUDE 1/ OUTPUT THIRD ORDER INTERCEPT 18 - 27 GHz 10 15 dB 18 - 27 GHz 10 15 dB 34.5 37 dBm 1/ Output Third Order Intercept point minimum performance is measured at 18.0, 23.0, 26.0 GHz, fixed voltage, Vd = 7.0V, Vg = Vg1 value passed from S-parameter testing. Power in per tone = -2.0 dBm. Separation = 0.010 GHz. TABLE V RELIABILITY DATA PARAMETER RJC Thermal resistance (channel to backside of carrier plate) BIAS CONDITIONS VD (V) ID (mA) 6 540 PDISS (W) 3.24 RJC (C/W) 23.09 TCH (C) 144.8 TM (HRS) 1.6E+6 Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo Carrier at 70C baseplate temperature. Worst case condition with no RF applied, 100% of DC power is dissipated. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 3 Product Datasheet January 21, 2002 Measured small signal data 6V, 540mA 18 16 14 12 10 S21 (dB) 8 6 4 2 0 -2 -4 -6 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) , TGA1135B-SCC S21 -5 -7 -9 -11 S11 S11 (dB) -13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) -5 -7 -9 -11 S22 S22 (dB) -13 -15 -17 -19 -21 -23 -25 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 Frequency (GHz) TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 4 Product Datasheet January 21, 2002 TGA1135B-SCC P1dB Measured Data for ~ 18K devices 32 Pout @1dB Compression (dBm) 31 30 29 28 27 26 25 24 18 20 22 24 26 28 Frequency (GHz) 5th 25th 50th 75th 95th 500 450 400 350 Samples 300 250 200 150 100 50 0 30 31 32 33 34 35 36 37 38 39 40 41 42 Pin=-2dBm, Vd=7V/460mA, freq=26GHz wafer 1 wafer 2 wafer 3 Typical Output TOI Measured Data TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 5 Product Datasheet January 21, 2002 TGA1135B-SCC VG1 VG2 GND DQ VD DET OUT Q1a 600m Q2a 1200m PWR DET RF IN Q1b 600m Q2b 1200m RF OUT Reference diode 2 Reference diode 1 REF3 GND VG1 VG2 GND DQ VD Note: If drain bias is from one side only, maximum Id is 440mA REF1 REF2 Note: no DC current allowed into the "DQ" pad DC Schematic TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 6 Product Datasheet January 21, 2002 TGA1135B-SCC 0.612: VG2 (180x100m) 0.875: DQ 1.253: VD 0.095 DET OUT 2.543 2.641 1.480 0.833 PWR DET (175x100m) 0.686 RF IN 0.373 RF OUT 0.098 0.000 0.000 REF 3: 0.220 REF 1: 2.360 DQ: 0.875 VG2: 0.612 (180x100m) VD: 1.253 Dimensions in mm RF I/O Pad: 200x100 mm DC Pads: 105x105 mm Die Area: 3.909 mm2 REF 2: 2.543 TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 7 Product Datasheet January 21, 2002 TGA1135B-SCC TGA1135B built-in power detector Vdet 100pF Vbias 100pF RF IN RF OUT TGA1135B with external test coupler (amplifier bias connections not shown) On-chip diode functions as envelope detector External coupler and DC bias required 10 EG1135B measured detector voltage offset vs output power with 20dB coupler: Vb=0.8V, f = 20GHz, Coupler loss is uncalibrated, 10K load 10K Detector voltage (V) 1 Video out (Vdet) EG1135B External DC bias 50 C=2pF 0.1 RF OUT 0.01 8 10 12 14 16 18 20 Pout (dBm) 22 24 26 28 30 32 External coupler (-20dB) RF OUT TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 8 Product Datasheet January 21, 2002 TGA1135B-SCC Vg (optional) 0.01F 0.01F DQ 100pF 100pF Vd Input TFN Output TFN 100pF 100pF DQ 0.01F Notes: 1. 1F capacitor on gate, drain lines not shown but required 2. 0.01F capacitor may be connected to "DQ" port as shown, or may be included on drain line 3. Vg connection is recommended on both sides for devices operating at or above P1dB Vg 0.01F Vd Chip Assembly and Bonding Diagram GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 9 Product Datasheet January 21, 2002 TGA1135B-SCC Assembly Process Notes Reflow process assembly notes: *= *= *= *= *= AuSn (80/20) solder with limited exposure to temperatures at or above 300C alloy station or conveyor furnace with reducing atmosphere no fluxes should be utilized coefficient of thermal expansion matching is critical for long-term reliability storage in dry nitrogen atmosphere Component placement and adhesive attachment assembly notes: *= *= *= *= *= *= *= vacuum pencils and/or vacuum collets preferred method of pick up avoidance of air bridges during placement force impact critical during auto placement organic attachment can be used in low-power applications curing should be done in a convection oven; proper exhaust is a safety concern microwave or radiant curing should not be used because of differential heating coefficient of thermal expansion matching is critical Interconnect process assembly notes: *= *= *= *= *= thermosonic ball bonding is the preferred interconnect technique force, time, and ultrasonics are critical parameters aluminum wire should not be used discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire maximum stage temperature: 200C GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com 10 |
Price & Availability of TGA1135B-SCC
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |