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| APT20GF120BRD 1200V 32A Fast IGBT & FRED The Fast IGBTTM is a new generation of high voltage power IGBTs. Using NonPunch Through Technology the Fast IGBTTM combined with an APT freewheeling ultraFast Recovery Epitaxial Diode (FRED) offers superior ruggedness and fast switching speed. TO-247 * Low Forward Voltage Drop * High Freq. Switching to 20KHz * Low Tail Current * Ultra Low Leakage Current * RBSOA and SCSOA Rated * Ultrafast Soft Recovery Antiparallel Diode MAXIMUM RATINGS (IGBT) Symbol VCES VCGR VGE I C1 I C2 I CM1 I CM2 PD TJ,TSTG TL Parameter G C E C G E All Ratings: TC = 25C unless otherwise specified. APT20GF120BRD UNIT RY A IN MIN Collector-Emitter Voltage Collector-Gate Voltage (RGE = 20K) Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 90C Pulsed Collector Current Pulsed Collector Current Total Power Dissipation 1 1 1200 1200 20 32 20 64 40 200 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec. STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1.0mA) Gate Threshold Voltage (VCE = VGE, I C = 350A, Tj = 25C) TYP MAX UNIT PR EL IM 1200 4.5 5.5 2.7 3.3 6.5 3.2 3.9 1.0 6.0 100 mA nA 052-6252 Rev A Volts Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 15A, Tj = 125C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 25C) Collector Cut-off Current (VCE = VCES, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V, VCE = 0V) I CES I GES CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. USA 405 S.W. Columbia Street APT Website - http://www.advancedpower.com Bend, Oregon 97702-1035 F-33700 Merignac - France Phone: (541) 382-8028 Phone: (33) 5 57 92 15 15 FAX: (541) 388-0364 FAX: (33) 5 56 47 97 61 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord DYNAMIC CHARACTERISTICS (IGBT) Symbol Cies Coes Cres Qg Qge Qgc td(on) tr td(off) tf td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets gfe Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 2 APT20GF120BRD Test Conditions Capacitance VGE = 0V VCE = 25V f = 1 MHz Gate Charge VGE = 15V VCC = 0.5VCES Resistive Switching (25C) VGE = 15V I C = I C2 VCC = 0.8VCES RG = 10 I C = I C2 MIN TYP MAX UNIT 1100 165 70 95 13 55 17 75 99 170 20 35 190 90 1.2 1.8 3.0 1500 250 100 150 20 85 nC pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time RY MIN ns IN A 30 70 275 135 ns IM EL 3 Inductive Switching (150C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 TJ = +150C Turn-on Switching Energy Turn-off Switching Energy Total Switching Losses Turn-on Delay Time Rise Time 3 mJ PR Inductive Switching (25C) VCLAMP(Peak) = 0.66VCES VGE = 15V I C = I C2 R G = 10 20 35 160 90 2.7 12 mJ S ns Turn-off Delay Time Fall Time Total Switching Losses 3 TJ = +25C VCE = 20V, I C = 15A Forward Transconductance THERMAL AND MECHANICAL CHARACTERISTICS (IGBT and FRED) Symbol RJC RJA WT Characteristic Junction to Case (IGBT) Junction to Case (FRED) Junction to Ambient TYP MAX UNIT 0.63 0.90 40 0.22 oz gm C/W Package Weight 6.1 10 lb*in N*m Torque 1 2 3 Mounting Torque using a 6-32 or 3mm Binding Head Machine Screw 1.1 052-6252 Rev A Repetitive Rating: Pulse width limited by maximum junction temperature. See MIL-STD-750 Method 3471 Switching losses include the FRED and IGBT. APT Reserves the right to change, without notice, the specifications and information contained herein. APT20GF120BRD PRELIMINARY Power dissipation Ptot = (TC) parameter: Tj 150 C 220 W A Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C 32 Ptot 180 160 140 120 IC 24 16 100 80 60 40 20 0 0 20 40 60 80 100 120 C 12 IM 160 IN 8 4 0 0 20 40 60 80 100 120 C 160 10 2 PR Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C t = 9.0s p 10 s EL TC A TC Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 RY IGBT D = 0.50 0.20 0.10 0.05 single pulse 0.02 0.01 10 -4 20 A K/W IC 10 1 100 s ZthJC 10 -1 10 0 1 ms 10 -2 10 ms DC 10 -1 0 10 10 1 10 2 10 3 V 10 -3 -5 10 10 -3 10 -2 10 -1 s 10 0 EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702-1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street 052-6252 Rev A VCE tp APT20GF120BRD PRELIMINARY Typ. gate charge VGE = (QGate) 16A parameter: IC puls = 15 A 20 V nF Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 VGE 16 14 12 10 8 6 4 2 0 0 10 20 30 40 50 60 C 600 V 800 V 10 0 Ciss Cies RY A 10 -1 Coes Coss Cres Crss IM 80 IN 70 100 10 -2 0 5 10 15 20 25 30 Short circuit safe operating area EL Q Gate V 40 VCE Reverse biased safe operating area 10 PR ICsc = f (VCE) , Tj = 150C parameter: VGE = 15 V, tsc 10 s, L < 25 nH ICpuls = f (VCE) , Tj = 150C parameter: VGE = 15 V 2.5 ICsc /IC(90C) ICsc /IC2 ICpulse/I C Cpuls /IC1 6 1.5 4 1.0 2 0.5 0 0 200 400 600 800 1000 1200 V 1600 VCE 0.0 0 200 400 600 800 1000 1200 V 1600 VCE 052-6252 Rev A EUROPE Avenue J.F. Kennedy Bat B4 Parc Cadera Nord F-33700 Merignac - France Bend, Oregon 97702-1035 Phone: (33) 5 57 92 15 15 Phone: (541) 382-8028 FAX: (33) 5 56 47 97 61 FAX: (541) 388-0364 USA 405 S.W. Columbia Street Typ. output characteristics Typ. output characteristics IC = f (VCE) parameter: tp = 80 s, Tj = 25 C 30 A 17V 15V 13V 11V 9V 7V IC = f (VCE) parameter: tp = 80 s, Tj = 125 C 30 A 17V 15V 13V 11V 9V 7V IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 IC 24 22 20 18 16 14 12 10 8 6 4 2 0 1 2 3 V 5 0 1 2 3 V 5 VCE VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 30 A IC 24 22 20 18 16 14 12 10 8 6 4 2 0 0 2 4 6 8 10 V 14 VGE APT20GF120BRD ULTRAFAST SOFT RECOVERY PARALLEL DIODE MAXIMUM RATINGS (FRED) Symbol VR VRRM VRWM IF(AV) IF(RMS) IFSM Characteristic / Test Conditions Maximum D.C. Reverse Voltage Maximum Peak Repetitive Reverse Voltage Maximum Working Peak Reverse Voltage Maximum Average Forward Current (TC = 85C, Duty Cycle = 0.5) All Ratings: TC = 25C unless otherwise specified. APT20GF120BRD UNIT 1200 Volts 30 70 210 Amps Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) STATIC ELECTRICAL CHARACTERISTICS (FRED) Symbol Characteristic / Test Conditions A RY MIN RMS Forward Current IN TYP MAX UNIT IF = 30A 2.5 2.0 2.0 250 500 10 A nH Volts IRM LS Maximum Reverse Leakage Current EL Maximum Reverse Leakage Current Series Inductance (Lead to Lead 5mm from Base) DYNAMIC CHARACTERISTICS (FRED) Symbol trr1 trr2 trr3 tfr1 tfr2 IRRM1 IRRM2 Qrr1 Qrr2 Vfr1 Vfr2 diM/dt IF = 30A, diF /dt = -240A/s, VR = 650V (See Figure 10) Characteristic MIN TYP MAX UNIT PR IM VF Maximum Forward Voltage IF = 60A IF = 30A, TJ = 150C VR = VR Rated VR = VR Rated, TJ = 125C Reverse Recovery Time, IF = 1.0A, diF /dt = -15A/s, VR = 30V, TJ = 25C Reverse Recovery Time IF = 30A, diF /dt = -240A/s, VR = 650V Forward Recovery Time IF = 30A, diF /dt = 240A/s, VR = 650V Reverse Recovery Current IF = 30A, diF /dt = -240A/s, VR = 650V Recovery Charge IF = 30A, diF /dt = -240A/s, VR = 650V Forward Recovery Voltage IF = 30A, diF /dt = 240A/s, VR = 650V Rate of Fall of Recovery Current TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C TJ = 25C TJ = 100C 70 70 160 255 255 7 12 660 85 ns 12 Amps 20 nC 1640 15 Volts 20 A/s 052-6252 Rev A 245 160 APT20GF120BRD 100 Qrr, REVERSE RECOVERY CHARGE (nano-COULOMBS) 2400 TJ = 100C VR = 650V IF, FORWARD CURRENT (AMPERES) 80 2000 60A 1600 30A 1200 800 400 15A 60 TJ = 150C TJ = 25C 20 TJ = 100C TJ = -55C 0 40 0 1 2 3 4 VF, ANODE-TO-CATHODE VOLTAGE (VOLTS) Figure 1, Forward Voltage Drop vs Forward Current 50 IRRM, REVERSE RECOVERY CURRENT (AMPERES) TJ = 100C VR = 650V 0 10 50 100 500 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 2, Reverse Recovery Charge vs Current Slew Rate 2.0 60A Kf, DYNAMIC PARAMETERS (NORMALIZED) 1.6 40 30A 30 15A 20 RY IRRM trr Qrr -50 TJ = 100C VR = 650V IF = 30A Qrr trr 1.2 10 IM 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 3, Reverse Recovery Current vs Current Slew Rate 250 TJ = 100C VR = 650V IN 0.4 0.0 2000 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 4, Dynamic Parameters vs Junction Temperature 100 Vfr, FORWARD RECOVERY VOLTAGE (VOLTS) EL tfr, FORWARD RECOVERY TIME (nano-SECONDS) trr, REVERSE RECOVERY TIME (nano-SECONDS) A 1600 0.8 200 60A 30A 150 80 Vfr PR 1200 15A 60 100 800 40 50 400 tfr 20 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 5, Reverse Recovery Time vs Current Slew Rate 1.0 0.5 ZJC, THERMAL IMPEDANCE (C/W) D=0.5 0.2 0.1 0.05 0.02 0.01 0.01 0.005 SINGLE PULSE 0.1 0.05 0 0 0 200 400 600 800 1000 diF /dt, CURRENT SLEW RATE (AMPERES/SEC) Figure 6, Forward Recovery Voltage/Time vs Current Slew Rate NOTE: PDM t1 t2 DUTY FACTOR D = t1 / t2 052-6252 Rev A PEAK TJ =PDM x Z JC + TC 0.001 -5 10 10-4 1.0 10 10-3 10-2 10-1 VR, REVERSE VOLTAGE (VOLTS) RECTANGULAR PULSE DURATION (SECONDS) Figure 7, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration APT20GF120BRD Vr D.U.T. 30H trr/Qrr Waveform +15v diF /dt Adjust 0v -15v 1 2 3 4 IF - Forward Conduction Current PR EL IM IN A RY Figure 25, Diode Reverse Recovery Test Circuit and Waveforms PEARSON 411 CURRENT TRANSFORMER diF /dt - Current Slew Rate, Rate of Forward Current Change Through Zero Crossing. IRRM - Peak Reverse Recovery Current. 1 4 6 Zero 5 trr - Reverse Recovery Time Measured from Point of IF 3 Current Falling Through Zero to a Tangent Line { 6 diM/dt} Extrapolated Through Zero Defined by 0.75 and 0.50 IRRM. 0.5 IRRM 0.75 IRRM 2 5 6 Qrr - Area Under the Curve Defined by IRRM and trr. diM/dt - Maximum Rate of Current Change During the Trailing Portion of trr. Qrr = 1/2 (trr . IRRM) Figure 8, Diode Reverse Recovery Waveform and Definitions TO-247 Package Outline 4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244) Collector (Cathode) 20.80 (.819) 21.46 (.845) 3.55 (.140) 3.81 (.150) 4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 19.81 (.780) 20.32 (.800) 1.01 (.040) 1.40 (.055) 052-6252 Rev A Gate Collector (Cathode) Emitter (Anode) 2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs. Dimensions in Millimeters and (Inches) |
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