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| 2N6093 NPN SILICON RF POWER TRANSISTOR PACKAGE STYLE TO-217 DESCRIPTION: The 2N6093 is a High Gain Linear RF Power Amplifier Used in Class A or Class B Applications With Individual Ballast Emitter Resistor and Built in Temperature Sensing Diode. MAXIMUM RATINGS IC VCE PDISS TJ TSTG JC O O 10 A 35 V 83.3 W @ TC = 75 C -65 C to +200 C -65 C to +200 C 1.50 C/W O O O O 1/4-28 UNF Thread 1 = Emitter & Diode Cathode 2 = Collector 3 = Base 4 = Diode Anode NONE CHARACTERISTICS SYMBOL BVCEO BVCES ICES BVEBO hFE VF hfe COB PIE GPE C IMD TC = 25 C O TEST CONDITIONS IC = 200 mA IC = 200 mA VCE = 60 V IE = 20 mA VCE = 6.0 V IF = 10 mA VCE = 28 V VCB = 30 V VCC = 28 V f = 30 MHz VCC = 28 V IC = 20 mA POE = 75.0 W IC = 20 mA IC = 1.0 A f = 50 MHz f = 1.0 MHz POE = 37.5 W IC = 5.0 A TC = 55 C O MINIMUM 35 70 TYPICAL MAXIMUM UNITS V V 30 3.5 20 0.8 2.0 250 1.88 3.75 13 40 -30 mA V --V --pF W dB % dB POE = 75.0 W f = 30 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1202 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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