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| SUP/SUB70N03-09P Vishay Siliconix N-Channel 30-V (D-S), 175_C, MOSFET PWM Optimized PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) 0.009 @ VGS = 10 V 0.015 @ VGS = 4.5 V ID (A) "70a "55 TO-220AB D TO-263 G DRAIN connected to TAB G GDS Top View SUP70N03-09 SUB70N03-09 N-Channel MOSFET DS Top View S ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175_C) Pulsed Drain Current Avalanche Current Repetitive Avalanche Energyb Power Dissipation Operating Junction and Storage Temperature Range L = 0.1 mH TC = 25_C TC = 25_C TC = 100_C Symbol VDS VGS ID IDM IAR EAR PD TJ, Tstg Limit "30 "20 "70a "50 "180 "45 101 93c -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter PCB Mount (TO-263)d Junction-to-Ambient Free Air (TO-220AB) Junction-to-Case Notes: a. Package limited. b. Duty cycle v 1%. c. See SOA curve for voltage derating. d. When mounted on 1" square PCB (FR-4 material). Document Number: 70821 S-59917--Rev. A, 28-Sep-98 www.vishay.com S FaxBack 408-970-5600 RthJC RthJA 62.5 1.6 Symbol Limit 40 Unit _C/W 2-1 SUP/SUB70N03-09P Vishay Siliconix MOSFET SPECIFICATIONS (TJ =25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 250 mA VDS = VGS, IDS = 250 mA VDS = 0 V, VGS = "20 V VDS = 24 V, VGS = 0 V Zero Gate Voltage Drain Current Z G Vl DiC IDSS VDS = 24 V, VGS = 0 V, TJ = 125_C VDS = 24 V, VGS = 0 V, TJ = 175_C On-State Drain Currenta ID(on) VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = 10 V, ID = 30 A, TJ = 125_C VGS = 10 V, ID = 30 A, TJ = 175_C VGS = 4.5 V, ID = 20 A Forward Transconductancea gfs VDS = 15 V, ID = 30 A 30 0.011 60 70 0.007 0.009 0.0135 0.017 0.015 S W Symbol Test Condition Min Typ Max Unit 30 V 1 2 "100 1 50 150 A mA A nA Dynamicb Input Capacitance Output Capacitance Reversen Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Turn-On Delay Timec Rise Timec Turn-Off Delay Fall Timec Timec Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf VDD = 15 V, RL = 0.21 W , ID ] 70 A, VGEN = 10 V, RG = 2.5 W VDS = 15 V, VGS = 10 V, ID = 70 A V V VGS = 0 V, VDS = 25 V f = 1 MH V V, MHz 2700 680 360 45 8.5 11 13 7 35 12 20 15 ns 60 20 70 nC C pF F Source-Drain Diode Ratings and Characteristics (TC = 25_C)b Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time IS ISM VSD trr IF = 70 A, VGS = 0 V IF = 70 A, di/dt = 100 A/ms 1.2 35 70 A 180 1.5 70 V ns Notes: a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. www.vishay.com S FaxBack 408-970-5600 2-2 Document Number: 70821 S-59917--Rev. A, 28-Sep-98 SUP/SUB70N03-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 180 VGS = 10 thru 7 V 150 6V 80 I D - Drain Current (A) 100 Transfer Characteristics I D - Drain Current (A) 120 5V 90 60 40 TC = 125_C 20 25_C -55_C 0 60 4V 30 3V 0 0 2 4 6 8 10 0 1 2 3 4 5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Transconductance 100 TC = -55_C r DS(on) - On-Resistance ( W ) 0.030 On-Resistance vs. Drain Current 80 g fs - Transconductance (S) 0.025 25_C 60 125_C 40 0.020 0.015 VGS = 4.5 V VGS = 10 V 0.010 20 0.005 0 0 10 20 30 40 50 60 70 0 0 20 40 60 80 100 ID - Drain Current (A) ID - Drain Current (A) Capacitance 4000 10 Gate Charge Ciss 3000 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 VDS = 15 V ID = 70 A 6 2000 4 1000 Crss Coss 2 0 0 6 12 18 24 30 0 0 10 20 30 40 50 VDS - Drain-to-Source Voltage (V) Document Number: 70821 S-59917--Rev. A, 28-Sep-98 Qg - Total Gate Charge (nC) www.vishay.com S FaxBack 408-970-5600 2-3 SUP/SUB70N03-09P Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2.4 VGS = 10 V ID = 30 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 2.0 r DS(on) - On-Resistance ( W) (Normalized) 1.6 TJ = 150_C TJ = 25_C 10 1.2 0.8 0.4 0 -50 1 -25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 1.5 TJ - Junction Temperature (_C) VSD - Source-to-Drain Voltage (V) THERMAL RATINGS Maximum Drain Current vs. Case Temperature 80 500 Safe Operating Area 60 I D - Drain Current (A) I D - Drain Current (A) 100 Limited by rDS(on) 10 ms 100 ms 40 10 1 ms TC = 25_C Single Pulse 10 ms 100 ms dc 20 0 0 25 50 75 100 125 150 175 TC - Case Temperature (_C) 2 1 Normalized Effective Transient Thermal Impedance 1 0.1 1 10 VDS - Drain-to-Source Voltage (V) 100 Normalized Thermal Transient Impedance, Junction-to-Case Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-5 10-4 10-3 10-2 10-1 1 3 Square Wave Pulse Duration (sec) www.vishay.com S FaxBack 408-970-5600 Document Number: 70821 S-59917--Rev. A, 28-Sep-98 2-4 |
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