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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
NE696M01
FEATURES
* * * * * HIGH fT: 14 GHz TYP at 3 V, 10 mA LOW NOISE FIGURE: NF = 1.6 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M01 TOP VIEW
2.1 0.1 1.25 0.1
0.65 2.0 0.2 1.3
1
6 0.2 (All Leads) 5
T95
SIDE VIEW
2
3
4
DESCRIPTION
NEC's NE696M01 is an NPN high frequency silicon epitaxial transistor (NE685) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices. The NE696M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
0.9 0.1 0.7 0.15 - 0.05 0 ~ 0.1
+0.10
PIN OUT 1. Emitter 2. Emitter 3. Base
4. Emitter 5. Emitter 6. Collector
Note: Pin 3 is identified with a circle on the bottom of the package.
ELECTRICAL CHARACTERISTICS (TA = 25C)
PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO hFE1 fT Cre2 |S21E|2 NF PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Forward Current Gain at VCE = 3 V, IC = 10 mA Gain Bandwidth at VCE = 3 V, IC = 10 mA, f = 2 GHz Feedback Capacitance at VCB = 3 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 3 V, IC = 10 mA, f = 2 GHz Noise Figure at VCE = 3 V, IC = 3 mA, f = 2 GHz GHz pF dB dB UNITS A A 80 120 14 0.15 14 1.6 MIN NE696M01 M01 TYP MAX 0.1 0.1 160
Notes: 1. Pulsed measurement, pulse width 350 s, duty cycle 2 %. 2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. 3. For Tape and Reel version use part number NE696M01-T1, 3K per reel.
California Eastern Laboratories
NE696M01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)
SYMBOLS VCBO VCEO VEBO IC PT TJ TSTG PARAMETERS Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature UNITS V V V mA mW C C RATINGS 9 6 2 30 150 150 -65 to +150
NE696M01 TYPICAL NOISE PARAMETERS (TA = 25C)
FREQ. (GHz) NFOPT (dB) GA (dB) OPT MAG ANG Rn/50
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage.
ORDERING INFORMATION
PART NUMBER NE696M01-T1 QUANTITY 3000 PACKAGING Tape & Reel
VCE = 1 V, IC = 3 mA 1.0 1.4 1.4 1.46 1.7 1.55 2.0 1.8 3.0 2.3 VCE = 2 V, IC = 1 mA 0.5 .94 0.8 1.1 1.0 1.25 1.5 1.55 2.0 1.94 3.0 2.65 VCE = 2 V, IC = 5 mA 0.5 1.2 0.8 1.32 1.0 1.47 1.5 1.63 2.0 1.82 3.0 2.17 VCE = 3 V, IC = 5 mA 0.5 0.8 1.0 1.5 2.0 3.0 1.25 1.35 1.41 1.58 1.81 2.29
18.5 16.4 15.2 14.5 11.0 16.8 14.8 13.8 11.4 9.6 7.0 23.0 20.3 18.8 15.8 13.0 9.8 24.2 20.7 18.8 15.2 13.7 12.0
0.53 0.47 0.43 0.39 0.3 0.72 0.66 0.63 0.56 0.5 0.46 0.49 0.44 0.42 0.39 0.33 0.25 0.5 0.45 0.44 0.41 0.34 0.29
79 95 111 132 177 41 65 79 104 138 -173 37 62 76 98 126 173 37 62 78 97 126 164
0.27 0.13 0.19 0.16 0.10 0.52 0.44 0.39 0.31 0.17 0.07 0.38 0.27 0.30 0.23 0.18 0.10 0.39 0.26 0.29 0.24 0.20 0.09
TYPICAL PERFORMANCE CURVES (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE
200
50
COLLECTOR CURRENT vs. BASE TO EMITTER VOLTAGE
VCE = 2 V
Total Power Dissipation, PT (mW)
Collector Current, IC (mA)
40
30
100
20
10
0 0 50 100 150
0 0.5 1.0
Ambient Temperature, TA (C) COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
25
Base to Emitter Voltage, VBE (V) DC CURRENT GAIN vs. COLLECTOR CURRENT
500
Collector Current, IC (mA)
DC Current Gain, hFE
20 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 5 40 A IB = 20 A 0
200 VCE = 2 V 100
15
50 VCE = 1 V
10
20
10
Collector to Emitter Voltage, VCE (V)
1.0
2.0
3.0
1
2
5
10
20
50
100
Collector Current, IC (mA)
NE696M01 TYPICAL PERFORMANCE CURVES (TA = 25 C)
COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE
30.0m
DC CURRENT GAIN vs. COLLECTOR CURRENT
150.0
Collector Current, IC (mA)
DC Current Gain, hFE (mA)
IC
HFE
2.00m /div
10.0 /div
0.00 0.00 VCE (V) 500m /div 6.00
50.0 0.00 IC (A) 2.00m /div 30.0m
Collector to Emitter Voltage, VCE (V)
Collector Current, IC (mA)
TYPICAL SCATTERING PARAMETERS (TA = 25C)
NE696M01 VCE = 1 V, IC = 5 mA
FREQUENCY (GHz) 0.40 0.50 0.60 0.70 0.80 0.90 1.00 1.20 1.40 1.60 1.80 2.00 2.25 2.50 2.75 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.728 0.684 0.639 0.594 0.556 0.522 0.492 0.442 0.406 0.380 0.362 0.353 0.351 0.360 0.377 0.397 0.451 0.498 0.538 0.567 0.587 0.608 0.630 0.657 0.690 ANG -52.30 -64.20 -73.80 -83.40 -92.50 -100.70 -108.50 -123.40 -137.30 -150.60 -164.30 -176.70 167.30 152.60 138.80 127.30 107.70 93.20 82.30 74.10 67.30 61.10 55.20 49.10 42.90 MAG 10.962 10.349 9.557 8.885 8.236 7.644 7.116 6.242 5.522 4.931 4.452 4.047 3.606 3.248 2.942 2.676 2.251 1.930 1.690 1.509 1.361 1.229 1.091 0.949 0.818
S21 ANG 136.50 128.40 121.20 114.50 108.30 102.80 97.80 88.70 80.40 73.00 65.90 59.30 51.40 43.80 36.40 29.70 16.40 4.10 -7.90 -19.70 -31.50 -43.20 -54.40 -63.80 -70.40 MAG 0.040 0.046 0.052 0.056 0.059 0.062 0.063 0.067 0.069 0.070 0.072 0.074 0.075 0.077 0.079 0.081 0.085 0.092 0.101 0.113 0.127 0.141 0.155 0.164 0.171
S12 ANG 56.00 51.30 46.70 42.10 38.80 35.70 33.80 29.60 26.80 24.40 22.70 21.90 20.20 20.20 19.30 18.50 18.50 17.50 16.20 13.60 9.40 4.00 -1.40 -6.40 -9.20 MAG 0.832 0.779 0.732 0.687 0.647 0.615 0.587 0.542 0.509 0.485 0.469 0.459 0.451 0.449 0.453 0.458 0.477 0.496 0.513 0.532 0.555 0.593 0.637 0.678 0.719
S22 ANG -32.90 -39.10 -44.00 -48.50 -52.30 -55.70 -58.60 -64.10 -69.10 -73.40 -77.90 -81.80 -86.70 -91.40 -96.10 -100.50 -108.90 -118.00 -128.80 -142.40 -158.60 -175.70 168.60 157.90 154.80
K
MAG1 (dB) 24.378 23.521 22.643 22.005 21.449 20.909 20.529 19.692 19.032 18.478 16.304 15.018 13.695 12.702 11.872 11.110 9.936 8.980 8.216 7.622 7.107 6.870 6.778 7.057 6.798
0.303 0.338 0.398 0.463 0.522 0.579 0.640 0.748 0.860 0.976 1.069 1.151 1.270 1.353 1.417 1.475 1.530 1.515 1.460 1.371 1.283 1.175 1.077 1.009 0.911
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE696M01 TYPICAL SCATTERING PARAMETERS (TA = 25C)
0.8 0.6 0.4 3 4 0.2 5 10 20 50 -50 -20 -10 1 1.5 2
90 S21
135
45
S12 180 5.00 0.05 0.10 0.15 0
0.2
0.4
0.6
0.8 1
1.5
2
3
45
10 20
-0.2 S11
S22
-5 -4 -3
-0.4 -2 -0.6 -1.5 -0.8 -1
Coordinates in Ohms Frequency in GHz VCE = 2 V, IC = 10 mA
10.00 225 15.00 270 315
NE696M01 VCE = 2 V, IC = 1 mA
FREQUENCY GHz 0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00
S11 MAG 0.941 0.874 0.833 0.610 0.536 0.502 0.550 0.617 0.660 ANG -25.2 -49.7 -61.1 -119.1 -150.6 176.8 123.5 93.4 74.9 MAG 2.924 2.776 2.642 2.104 1.808 1.551 1.121 0.852 0.665
S21 ANG 154.2 132.3 122.1 75.2 54.7 36.1 4.0 -22.3 -45.6 MAG 0.037 0.066 0.077 0.097 0.090 0.077 0.053 0.071 0.116
S12 ANG 67.9 51.3 43.1 9.5 -2.7 -10.4 -0.2 25.0 21.5 MAG 0.977 0.930 0.904 0.798 0.765 0.755 0.769 0.789 0.821
S22 ANG -16.3 -31.3 -37.9 -66.0 -77.3 -87.4 -107.1 -133.7 -169.3
K 0.181 0.255 0.315 0.662 0.919 1.238 2.016 1.607 1.048
MAG1 (dB) 18.978 16.239 15.354 13.363 13.030 10.100 7.495 6.222 6.238
VCE = 2 V, IC = 5 mA
0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
0.753 0.583 0.513 0.338 0.333 0.366 0.468 0.543 0.591
-46.2 -83.4 -98.3 -165.4 161.7 134.1 97.3 77.4 64.3
11.297 8.809 7.704 4.496 3.634 3.005 2.169 1.697 1.381
139.6 111.9 101.4 61.9 46.0 31.6 5.4 -19.0 -43.2
0.030 0.047 0.051 0.059 0.062 0.066 0.081 0.107 0.141
59.6 43.1 37.7 27.5 27.6 27.8 29.4 25.2 14.8
0.871 0.715 0.660 0.541 0.530 0.538 0.575 0.610 0.666
-27.0 -43.8 -49.4 -70.7 -80.0 -89.2 -107.7 -132.7 -167.0
0.296 0.509 0.628 1.163 1.357 1.460 1.386 1.152 0.921
25.758 22.728 21.791 16.374 14.112 12.563 10.575 9.638 9.910
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE696M01 TYPICAL SCATTERING PARAMETERS (TA = 25C)
NE696M01 VCE = 3 V, IC = 5 mA
FREQUENCY (GHz) 0.40 0.80 1.00 2.00 2.50 3.00 4.00 5.00 6.00 Note: 1. Gain Calculation:
MAG = |S21| |S12|
S11 MAG 0.765 0.596 0.525 0.335 0.323 0.353 0.456 0.533 0.583 ANG -43.9 -79.7 -94.2 -160.2 166.2 137.5 99.2 78.9 65.7 MAG 11.370 8.988 7.898 4.669 3.781 3.134 2.266 1.773 1.442
S21 ANG 140.8 113.4 102.7 63.0 47.0 32.4 5.9 -18.6 -43.1 MAG 0.028 0.043 0.046 0.054 0.057 0.062 0.078 0.106 0.142
S12 ANG 60.3 44.4 39.6 30.6 30.6 31.8 34.1 29.7 18.5 MAG 0.885 0.739 0.687 0.573 0.562 0.570 0.606 0.642 0.695
S22 ANG -25.1 -41.1 -46.5 -67.5 -76.6 -85.9 -104.5 -129.8 -164.2
K
MAG1 (dB) 26.086 23.202 22.348 16.952 14.673 13.178 11.285 10.827 10.067
0.299 0.506 0.627 1.159 1.352 1.422 1.312 1.053 0.823
(K
K 2- 1
). When K 1, MAG is undefined and MSG values are used. MSG =
2 2 2 |S21| , K = 1 + | | - |S11| - |S22| , = S11 S22 - S21 S12 |S12| 2 |S12 S21|
MAG = Maximum Available Gain MSG = Maximum Stable Gain
NE696M01 NE696M01 NONLINEAR MODEL SCHEMATIC
0.05pF CCB Q1 CCE 0.15pF LCX COLLECTOR 0.58nH LBX BASE 0.15nH 1.3nH LB
CCE_PKG 0.5pF CBE_PKG 0.13pF LE 0.22nH
LEX 0.15nH
EMITTER
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 119 1.06 20.5 0.18 1e-13 2 6.5 1.08 18 0.015 0 2 1.23 11 2.5 0.009 5 0.4e-12 0.68 0.5 0.18e-12 0.5 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.34 0.6 0 0.75 0 0.5 4e-12 5.2 4.58 0.01 0 1e-9 1.11 0 3 0 1
UNITS
Parameter time capacitance inductance resistance voltage current Units seconds farads henries ohms volts amps
ADDITIONAL PARAMETERS
Parameters CCB CCE LB LE CCEPKG CBEPKG LBX LCX LEX 696M01 0.05e-12 0.15e-12 1.3e-9 0.22e-9 0.5e-12 0.13e-12 0.15e-9 0.58e-9 0.15e-9
MODEL RANGE Frequency: 0.4 to 7.5 GHz Bias: VCE = 0.5 V to 5 V, IC = 0.5 mA to 10 mA Date: 2/6/97
(1) Gummel-Poon Model
Life Support Applications These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and agree to fully indemnify CEL for all damages resulting from such improper use or sale.
08/21/2003
A Business Partner of NEC Compound Semiconductor Devices, Ltd.

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