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| PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 PACKAGE DIMENSIONS 0.190 (4.83) 0.178 (4.52) QSD723 QSD724 45 REFERENCE SURFACE 0.235 (5.97) 0.218 (5.54) 0.030 (0.76) 0.800 (20.3) MIN EMITTER 0.050 (1.27) 0.100 (2.54) NOM 0.215 (5.46) NOM 0.020 (0.51) SQ 2PLCS COLLECTOR SCHEMATIC COLLECTOR 45 0.020 (0.51) RADIUS NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of .010 (.25) on all non-nominal dimensions unless otherwise specified. EMITTER DESCRIPTION The QSD722/723/724 is a silicon phototransistor encapsulated in an infrared transparent, black TO-18 package. FEATURES * NPN Silicon Phototransistor * Package Type: Plastic TO-18 * Matched Emitter: QED523 * Narrow Reception Angle, 40 * Daylight Filter * Package material and color: black epoxy * High Sensitivity 2001 Fairchild Semiconductor Corporation DS300363 7/18/01 1 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Collector-Emitter Voltage Emitter-Collector Voltage Power Dissipation(1) (TA = 25C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F VCE VEC PD Rating -40 to +100 -40 to +100 240 for 5 sec 260 for 10 sec 30 5 100 Unit C C C C V V mW QSD723 QSD724 1. Derate power dissipation linearly 1.33 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6mm) minimum from housing. 5. ! = 880 nm, AlGaAs. ELECTRICAL / OPTICAL CHARACTERISTICS PARAMETER TEST CONDITIONS (TA =25C) SYMBOL MIN TYP MAX UNITS Peak Sensitivity Wavelength Reception Angle Collector-Emitter Dark Current Collector-Emitter Breakdown Emitter-Collector Breakdown On-State Collector Current(5) QSD722 QSD723 QSD724 Saturation Voltage(5) Rise Time Fall Time VCE = 10 V, Ee = 0 IC = 1 mA IE = 100 A !PS " ICEO BVCEO BVECO -- -- -- 30 5 0.6 2.5 3.5 -- -- -- 880 20 -- -- -- -- -- -- 0.4 8 8 -- -- 100 -- -- 3.8 10.0 -- -- -- -- nm Deg. nA V V Ee = 0.5 mW/cm2, VCE = 5 V Ee = 0.5 mW/cm2, IC = 0.6 mA VCC = 5 V, RL = 100 , IC = 0.2 mA IC(ON) VCE(sat) tr tf mA V s www.fairchildsemi.com 2 OF 4 7/18/01 DS300363 PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 Figure 1. Light Current vs. Radiant Intensity 102 QSD723 100 90 80 QSD724 VCE = 5V GaAs Light Source Figure 2. Angular Response Curve 110 120 130 140 70 60 50 40 30 20 10 0 1.0 IC(ON) - Light Current (mA) 101 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 0.2 0.4 0.6 0.8 100 0.1 1 Ee - Radiant Intensity (mW/cm ) 2 Figure 3. Dark Current vs. Collector - Emitter Voltage 101 101 Figure 4. Light Current vs. Collector - Emitter Voltage Ie=1mW/cm 2 IL - Normalized Light Current Ie=0.5mW/cm 2 100 ICEO - Dark Current (nA) 100 Ie=0.2mW/cm 2 Ie=0.1mW/cm 2 10-1 10-1 10-2 Normalized to: VCE = 5V Ie = 0.5mW/cm 2 TA = 25 oC 10 -2 0 5 10 15 20 25 30 10 -3 0.1 1 10 VCE - Collector-Emitter Voltage (V) VCE - Collector-Emitter Voltage (V) Figure 5. Dark Current vs. Ambient Temperature 104 Normalized to: VCE = 25V ICEO - Normalized Dark Current 103 TA = 25 oC VCE =25V 102 VCE =10V 101 100 10-1 25 50 75 o 100 TA - Ambient Temperature ( C) DS300363 7/18/01 3 OF 4 www.fairchildsemi.com PLASTIC SILICON INFRARED PHOTOTRANSISTOR QSD722 QSD723 QSD724 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. www.fairchildsemi.com 4 OF 4 7/18/01 DS300363 |
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