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| GaAIAs-IR-Lumineszenzdiode (880nm) GaAIAs Infrared Emitter (880 nm) SFH 487 Area not flat 0.7 0.4 0.6 0.4 5.2 4.5 2.54 mm spacing 0.8 0.4 4.1 3.9 4.0 3.6 Approx. weight 0.3 g Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlassigkeit q Hohe Impulsbelastbarkeit q Gute spektrale Anpassung an Si-Fotoempfanger q Gehausegleich mit SFH 309, SFH 409 Anwendungen q IR-Fernsteuerung von Fernseh-, Rundfunk- Features q Fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q Good spectral match to silicon photodetectors q Same package as SFH 309, SFH 409 Applications q IR remote control for hifi and TV sets, video und Videogeraten, Lichtdimmern q Lichtschranken bis 500 kHz tape recorder, dimmers q Light-reflection switches (max. 500 kHz) Typ Type SFH 487 SFH 487-2 Bestellnummer Ordering Code Q62703-Q1095 Q62703-Q2174 Gehause Package 3-mm-LED-Gehause (T1), klares violettes EpoxyGieharz, Anschlusse im 2.54-mm-Raster (1/10''), Anodenkennzeichnung: kurzerer Anschlu 3 mm LED package (T1), violet-colored transparent epoxy resin, solder tabs lead spacing 2.54 mm (1/10''), anode marking: short lead Semiconductor Group 1 1997-11-01 fex06250 1.8 1.2 29 6.3 5.9 27 Cathode (SFH 409) Anode (SFH 487) o3.1 o2.9 (3.5) Chip position 0.6 0.4 GEX06250 SFH 487 Grenzwerte (TA = 25 C) Maximum Ratings Bezeichnung Description Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, 10 s Surge current Verlustleistung Power dissipation Warmewiderstand, freie Beinchenlange max. 10 mm Thermal resistance, lead length between package bottom and PC-board max. 10 mm Symbol Symbol Wert Value - 55 ... + 100 100 5 100 2.5 200 375 Einheit Unit C C V mA A mW K/W Top; Tstg Tj VR IF IFSM Ptot RthJA Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA Spektrale Bandbreite bei 50 % von Imax, Symbol Symbol peak Wert Value 880 Einheit Unit nm 80 nm IF = 100 mA Spectral bandwidth at 50 % of Imax Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktiven Chipflache Dimension of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top 20 0.16 0.4 x 0.4 2.6 Grad deg. mm2 mm mm A LxB LxW H Semiconductor Group 2 1997-11-01 SFH 487 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Kapazitat Capacitance VR = 0 V, f = 1 MHz Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom Reverse current VR = 5 V Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von peak, IF = 100 mA Temperature coefficient of peak, IF = 100 mA Symbol Symbol Wert Value 0.6/0.5 Einheit Unit s tr, tf Co 25 pF VF IR 1.5 (< 1.8) 3.0 (< 3.8) 0.01 ( 1) V A e 25 mW TCI - 0.5 %/K IF = 100 mA TCV TC -2 0.25 mV/K nm/K Semiconductor Group 3 1997-11-01 SFH 487 Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms Strahlstarke Radiant intensity IF = 1 A, tp = 100 s Symbol Wert Value SFH 487 SFH 487-2 Einheit Unit Ie > 12.5 > 20 mW/sr Ie typ. 270 270 mW/sr Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01895 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 4 1997-11-01 SFH 487 Relative spectral emission Irel = f () 100 rel % 80 OHR00877 Radiant intensity Ie = f (IF) Ie 100 mA OHR00878 Single pulse, tp = 20 s 10 2 e e (100mA) 10 1 Max. permissible forward current IF = f (TA) 125 OHR00880 F mA 100 60 10 0 75 40 10 -1 50 20 10 -2 25 0 750 10 -3 800 850 900 950 nm 1000 10 0 10 1 10 2 10 3 mA 10 4 F 0 0 20 40 60 80 C 100 T Forward current, IF = f (VF) Single pulse, tp = 20 s 10 1 OHR00881 Permissible pulse handling capability IF = f (), TA = 25 oC, duty cycle D = parameter 10 4 mA OHR00886 Forward current versus lead length between the package bottom and the PC-board IF = f (I), TA = 25 oC 120 mA OHR00949 F A F 10 0 10 3 0.1 0.2 D = 0.005 0.01 0.02 0.05 F 100 80 10 -1 0.5 10 2 DC 60 40 10 -2 D= 10 -3 tp T tp F 20 0 1 2 3 4 5 6 V VF 8 T 10 1 -5 -4 -3 -2 10 10 10 10 10 -1 10 0 0 10 1 s 10 2 tp 0 5 10 15 20 25 mm 30 Semiconductor Group 5 1997-11-01 |
Price & Availability of Q62703-Q1095
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