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DISCRETE SEMICONDUCTORS
DATA SHEET
BLW32 UHF linear power transistor
Product specification August 1986
Philips Semiconductors
Product specification
UHF linear power transistor
DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in linear u.h.f. amplifiers for television transmitters and transposers. The excellent d.c. dissipation properties for class-A operation are obtained by means of diffused emitter ballasting resistors and a multi-base structure, providing an optimum temperature profile on the crystal area. The combination of optimum thermal design and the application of gold sandwich metallization realizes excellent reliability properties. The transistor has a 14" capstan envelope with ceramic cap.
BLW32
QUICK REFERENCE DATA R.F. performance MODE OF OPERATION class-A; linear amplifier fvision MHz 860 860 Note 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. VCE V 25 25 IC mA 150 150 Th C 70 25 dim (1) dB -60 -60 Po sync (1) W > typ. 0,5 > 0,63 typ. Gp dB 11 12,2
PIN CONFIGURATION
PINNING - SOT122A. PIN 1 2 DESCRIPTION collector emitter base emitter
handbook, halfpage
4 1 3
3 4
2 Top view
MBK187
Fig.1 Simplified outline. SOT122A.
PRODUCT SAFETY This device incorporates beryllium oxide, the dust of which is toxic. The device is entirely safe provided that the BeO disc is not damaged.
August 1986
2
Philips Semiconductors
Product specification
UHF linear power transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Collector-emitter voltage (peak value); VBE = 0 open base Emitter-base voltage (open collector) Collector current d.c. or average (peak value); f > 1 MHz Total power dissipation up to Tmb = 25 C Storage temperature Operating junction temperature IC ICM Ptot Tstg Tj max. max. max. max. VCESM VCEO VEBO max. max. max.
BLW32
50 V 30 V 4V 650 mA 1000 mA 10,8 W 200 C
-65 to +150 C
handbook, halfpage
1
MGP429
handbook, halfpage
15
MGP430
Ptot IC (A) Th = 70 C Tmb = 25 C
(1)
(W) 10
5
10-1 1 10 VCE (V) 102
0 0 50 Th (C) 100
(1) Second breakdown limit (independent of temperature).
Fig.2 D.C. SOAR.
Fig.3 Power derating curve vs. temperature.
THERMAL RESISTANCE (see Fig.4) From junction to mounting base (dissipation = 3,75 W; Tmb = 72,3 C; i.e. Th = 70 C) From mounting base to heatsink Rth j-mb Rth mb-h = = 15,0 K/W 0,6 K/W
August 1986
3
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
handbook, full pagewidth
20
MGP431
Rth j-h (K/W)
Th = 125 C
100 C
75 C
50 C
25 C
0 C Tj = 200 C 175 C 150 C 15 100 C 75 C 125 C
10 0 5 10 Ptot (W) 15
Fig.4
Maximum thermal resistance from junction to heatsink as a function of power dissipation, with heatsink and junction temperature as parameters. (Rth mb-h = 0,6 K/W.)
Example Nominal class-A operation: VCE = 25 V; IC = 150 mA; Th = 70 C. Fig.4 shows: Typical device: Rth j-h Tj Rth j-h Tj max. max. typ. typ. 15,6 K/W 130 C 13,5 K/W 120 C
August 1986
4
Philips Semiconductors
Product specification
UHF linear power transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified Collector-emitter breakdown voltage VBE = 0; IC = 2 mA open base; IC = 15 mA Emitter-base breakdown voltage open collector; IE = 1 mA Collector cut-off current VBE = 0; VCE = 30 V VBE = 0; VCE = 30 V; Tj = 175 C D.C. current gain
(1)
BLW32
V(BR)CES V(BR)CEO V(BR)EBO ICES ICES hFE hFE VCEsat
(2)
> > > < < > typ. < typ. typ. typ. typ. typ. typ.
50 V 30 V 4V 0,5 mA 1,2 mA 20 40 120 500 mV 3,5 GHz 3,4 GHz 3,7 pF 1,9 pF 1,2 pF
IC = 150 mA; VCE = 25 V IC = 150 mA; VCE = 25 V; Tj = 175 C Collector-emitter saturation voltage IC = 300 mA; IB = 30 mA Transition frequency at f = 500 MHz -IE = 150 mA; VCB = 25 V -IE = 300 mA; VCB = 25 V Collector capacitance at f = 1 MHz IE = Ie = 0; VCB = 25 V Feedback capacitance at f = 1 MHz IC = 10 mA; VCE = 25 V Collector-stud capacitance Notes 1. Measured under pulse conditions: tp 300 s; 0,02. 2. Measured under pulse conditions: tp 50 s; 0,01.
(1)
fT fT Cc Cre Ccs
August 1986
5
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
MGP432
handbook, halfpage
50
MGP433
handbook, halfpage
10
VCE = 25 V hFE
Cc (pF)
25 5V
5 typ
0 0 250 500 IC (mA) 750
0 0 10 20 VCB (V) 30
Fig.5 Typical values; Tj = 25 C.
Fig.6 IE = Ie = 0; f = 1 MHz; Tj = 25 C.
handbook, full pagewidth
4
MGP434
fT (GHz) 3
typ
2
1
0 0 250 500 -IE (mA) 750
Fig.7 VCB = 25 V; f = 500 MHz; Tj = 25 C.
August 1986
6
Philips Semiconductors
Product specification
UHF linear power transistor
APPLICATION INFORMATION fvision (MHz) 860 860 860 Note VCE (V) 25 25 25 IC (mA) 150 150 150 Th (C) 70 70 25 dim(dB) (1) -60 -60 -60 Po sync (W) (1) > typ. typ. 0,5 0,58 0,63
BLW32
Gp (dB) > 11 typ. 12,2 typ. 12,2
1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level.
handbook, full pagewidth
L1
C1
L2
C3
L3
T.U.T.
L6
C7
L7 50
50
C2
L4
C4
C5
L5
C6
C8
C9
C10
C11
C12
C13
C14
C15
+VBB
+VCC
MGP435
Fig.8 Test circuit at fvision = 860 MHz.
List of components: C1 = C7 = 2 to 18 pF film dielectric trimmer (cat. no. 2222 809 05003) C2 = C6 = C8 = 1 to 3,5 pF film dielectric trimmer (cat. no. 2222 809 05001) placed 24 mm, 17 mm and 45 mm respectively from transistor edge C3 = 1,8 to 10 pF film dielectric trimmer (cat. no. 2222 809 05002) C4 = C5 = 3 pF multilayer chip capacitor (ATC 100A-3RO-C-PX-50) C9 = C12 = 1 nF chip capacitor C10 = 100 nF polyester capacitor C11 = C13 = 470 nF polyester capacitor C14 = 10 nF polyester capacitor C15 = 3,3 F/40 V solid aluminium electrolytic capacitor L1 = stripline (5,0 mm x 4,5 mm) L2 = stripline (13,2 mm x 4,5 mm) L3 = stripline (15,0 mm x 4,5 mm) L4 = micro choke 0,47 H (cat. no. 4322 057 04770) L5 = 4 turns closely wound enamelled Cu wire (1,0 mm); int. dia. 5,5 mm; leads 2 x 4 mm L6 = stripline (37,0 mm x 4,5 mm) L7 = stripline (13,5 mm x 4,5 mm)
August 1986
7
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
L1; L2; L3; L6 and L7 are striplines on a double Cu-clad printed-circuit board with PTFE fibre-glass dielectric (r = 2,74); thickness 1/16". Component layout and printed-circuit board for 860 MHz test circuit are shown in Fig.9. For bias circuit see Fig.10.
114.5
handbook, full pagewidth
46
C11 +VBB L4 C10 C9 C4 L1 C1 C2 L2 L3 C3 C5
C13 C15
+
+VCC C14
C12 L5 L6 C7 C6 C8 L7
MGP436
Fig.9 Component layout and printed-circuit board for 860 MHz test circuit.
The circuit and the components are situated on one side of the PTFE fibre-glass board, the other side being fully metallized to serve as earth. Earth connections are made by means of hollow rivets, whilst under the emitter leads Cu straps are used for a direct contact between upper and lower sheets.
August 1986
8
Philips Semiconductors
Product specification
UHF linear power transistor
List of components:
+Vs D2 C4 R6
BLW32
C1 = 100 pF ceramic capacitor C2 = C3 = 100 nF polyester capacitor C4 = 10 F/25 V solid aluminium
R1 D1 R2 C1 C2 R3 R8 R9 R4 R5 C3 TR1 R7
+VCC
electrolytic capacitor R1 = 150 carbon resistor (0,25 W) R2 = 100 preset potentiometer (0,1 W)
+VBB
R3 = 82 carbon resistor (0,25 W) R4 = R5 = 2,2 k carbon resistor (0,25 W) R6 = 12 carbon resistor (0,5 W) R7 = R8 = 820 carbon resistor (0,25 W) R9 = 33 carbon resistor (0,25 W) D1 D2 TR1 = BZY88-C3V3 = BY206 = BD136
0
MGP437
Fig.10 Bias circuit for class-A amplifier at fvision = 860 MHz.
handbook, full pagewidth
-50
MGP438
30
dim (dB) dim
dcm (%)
-55
20
-60
dcm
10
-65
0 0 0.5 1 1.5 Po sync (W) 2
Fig.11 Intermodulation distortion (dim)(1.) and cross-modulation distortion (dcm)(2.) as a function of output power. Typical values; VCE = 25 V; IC = 150 mA; fvision = 860 MHz; - - - Th = 25 C; Th = 70 C.
Information for wideband application from 470 to 860 MHz available on request. 1. Three-tone test method (vision carrier -8 dB, sound carrier -7 dB, sideband signal -16 dB), zero dB corresponds to peak sync level. Intermodulation distortion of input signal -75 dB. 2. Two-tone test method (vision carrier 0 dB, sound carrier -7 dB), zero dB corresponds to peak sync level. Cross-modulation distortion (dcm) is the voltage variation (%) of sound carrier when vision carrier is switched from 0 dB to -20 dB. August 1986 9
Philips Semiconductors
Product specification
UHF linear power transistor
BLW32
handbook, halfpage
10
MGP439
handbook, halfpage
100
MGP440
ri, xi () 0
ri
RL, XL () 75
RL
xi -10 50 XL -20 25
-30 10
102
f (MHz)
103
0 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 150 mA; Th = 70 C
Typical values; VCE = 25 V; IC = 150 mA; Th = 70 C
Fig.12 Input impedance (series components).
Fig.13 Load impedance (series components).
Ruggedness The BLW32 is capable of withstanding a load mismatch (VSWR = 50 through all phases) under the following conditions: f = 860 MHz; VCE = 25 V; IC = 150 mA; Th = 70 C and PL = 1 W.
handbook, halfpage
35
MGP441
Gp (dB) 25
15
5 10
102
f (MHz)
103
Typical values; VCE = 25 V; IC = 150 mA; Th = 70 C
Fig.14
August 1986
10
Philips Semiconductors
Product specification
UHF linear power transistor
PACKAGE OUTLINE Studded ceramic package; 4 leads
BLW32
SOT122A
D
ceramic BeO metal c
A
Q N1 D1
A w1 M A M W
N
D2
N3 X M1
H b
detail X
4 L
3 H 1
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm A 5.97 4.74 b 5.85 5.58 c 0.18 0.14 D 7.50 7.23 D1 6.48 6.22 D2 7.24 6.93 H 27.56 25.78 L 9.91 9.14 M1 3.18 2.66 M 1.66 1.39 N 11.82 11.04 N1 max. 1.02 N3 3.86 2.92 Q 3.38 2.74 W 8-32 UNC w1 0.381
90
OUTLINE VERSION SOT122A
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-04-18
August 1986
11
Philips Semiconductors
Product specification
UHF linear power transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLW32
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
August 1986
12

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