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TSH350
550 MHz, Low Noise Current Feedback Amplifier
Bandwidth: 550MHz in unity gain Quiescent current: 4.1mA Slew rate: 940V/s Input noise: 1.5nV/VHz Distortion: SFDR=-66dBc (10MHz, 1Vp-p) 2.8Vp-p min. output swing on 100 load for a 5V supply Tested on 5V power supply
Pin Connections (top view)
OUT 1 -VCC 2 +IN 3 SOT23-5
5 +VCC
Description
The TSH350 is a current feedback operational amplifier using a very high speed complementary technology to provide a bandwidth up to 410MHz while drawing only 4.1mA of quiescent current. With a slew rate of 940V/s and an output stage optimized for driving a standard 100 load, this circuit is highly suitable for applications where speed and power-saving are the main requirements. The TSH350 is a single operator available in the tiny SOT23-5 and SO8 plastic packages, saving board space as well as providing excellent thermal and dynamic performances.
+4 -IN
NC 1 -IN 2 +IN 3 -VCC 4 SO8 _ +
8 NC 7 +VCC 6 OUT 5 NC
Applications
Communication & Video Test Equipment Medical Instrumentation ADC drivers
Order Codes
Part Number TSH350ILT TSH350ID TSH350IDT Temperature Range -40C to +85C Package SOT23-5 SO8 SO8 Conditioning Tape&Reel Tube Tape&Reel Marking K305 TSH350I TSH350I
December 2004
Revision 2
1/21
TSH350
Absolute Maximum Ratings
1 Absolute Maximum Ratings
Table 1: Key parameters and their absolute maximum ratings
Symbol VCC Vid Vin Toper Tstg Tj Rthja Supply Voltage 1 Differential Input Voltage2 Input Voltage Range Operating Free Air Temperature Range Storage Temperature Maximum Junction Temperature Thermal Resistance Junction to Ambient SOT23-5 SO8 Thermal Resistance Junction to Ambient SOT23-5 SO8 Maximum Power Dissipation4 (@Ta=25C) for Tj=150C SOT23-5 SO8 HBM : Human Body Model 5 (pins 1, 4, 5, 6, 7 and 8) HBM : Human Body Model (pins 2 and 3) ESD MM : Machine Model 6 (pins 1, 4, 5, 6, 7 and 8) MM : Machine Model (pins 2 and 3) CDM : Charged Device Model (pins 1, 4, 5, 6, 7 and 8) CDM : Charged Device Model (pins 2 and 3) Latch-up Immunity
3
Parameter
Value 6 +/-0.5 +/-2.5 -40 to + 85 -65 to +150 150 250 150 80 28 500 830 2 0.5 200 60 1.5 1.5 200
Unit V V V C C C C/W
Rthjc
C/W
Pmax
mW kV kV V V kV kV mA
1) All voltages values are measured with respect to the ground pin. 2) Differential voltage are non-inverting input terminal with respect to the inverting input terminal. 3) The magnitude of input and output voltage must never exceed VCC +0.3V. 4) Short-circuits can cause excessive heating. Destructive dissipation can result from short circuit on amplifiers. 5) Human body model, 100pF discharged through a 1.5k resistor into pMin of device. 6) This is a minimum Value. Machine model ESD, a 200pF cap is charged to the specified voltage, then discharged directly into the IC with no external series resistor (internal resistor < 5), into pin to pin of device.
Table 2: Operating conditions
Symbol VCC Vicm
1
Parameter Supply Voltage Common Mode Input Voltage
Value 4.5 to 5.5 -Vcc+1.5V to +Vcc-1.5V
Unit V V
1) Tested in full production at 5V (2.5V) supply voltage.
2/21
Electrical Characteristics
TSH350
2 Electrical Characteristics
Table 3: Electrical characteristics for VCC = 2.5Volts, Tamb = 25C (unless otherwise specified)
Symbol Parameter Test Condition Min. Typ. Max. Unit
DC performance
Vio Input Offset Voltage Offset Voltage between both inputs Vio drift vs. Temperature Tamb Tmin. < Tamb < Tmax. Tmin. < Tamb < Tmax. 0.8 1 0.9 12 13 1 2.5 56 68 60 58 81 78 51 48 4.1 4.9 mA 20 35 4 mV
Vio
Iib+ IibCMR SVR
V/C A A
dB dB
Non Inverting Input Bias Current Tamb DC current necessary to bias the input + Tmin. < Tamb < Tmax. Inverting Input Bias Current Tamb DC current necessary to bias the input Tmin. < Tamb < Tmax. Common Mode Rejection Ratio 20 log (Vic/Vio ) Supply Voltage Rejection Ratio 20 log (Vcc/Vio) Power Supply Rejection Ratio 20 log (Vcc/Vout) Positive Supply Current DC consumption with no input signal Transimpedance Output Voltage/Input Current Gain in open loop of a CFA. For a VFA, the analog of this feature is the Open Loop Gain (AVD) -3dB Bandwidth Frequency where the gain is 3dB below the DC gain AV Note: Gain Bandwidth Product criterion is not applicable for Current-FeedbackAmplifiers
Vic = 1V
Tmin. < Tamb < Tmax.
Vcc=+3.5V to +5V
Tmin. < Tamb < Tmax. AV = +1, Vcc=100mV at 1kHz Tmin. < Tamb < Tmax. No load
PSR
dB
ICC
Dynamic performance and output characteristics
Vout = 1V, RL = 100
Tmin. < Tamb < Tmax. 250 Small Signal Vout=20mVp-p AV = +1, RL = 100 AV = +2, RL = 100 AV = +10, RL = 100 AV = -2, RL = 100 k 170 270 k
ROL
Bw
250
550 390 125 370 65
MHz
Gain Flatness @ 0.1dB Small Signal Vout=100mVp Band of frequency where the gain varia- AV = +1, RL = 100 tion does not exceed 0.1dB SR Slew Rate Maximum output speed of sweep in large signal High Level Output Voltage Low Level Output Voltage Vout = 2Vp-p, AV = +2, RL = 100 RL = 100 Tmin. < Tamb < Tmax. RL = 100 Tmin. < Tamb < Tmax. 1.44
940 1.56 1.49 -1.53 -1.49 -1.44
V/s V V
VOH VOL
3/21
TSH350
Electrical Characteristics
Table 3: Electrical characteristics for VCC = 2.5Volts, Tamb = 25C (unless otherwise specified)
Symbol Iout Parameter Isink Short-circuit Output current coming in the op-amp. See fig-8 for more details Isource Output current coming out from the opamp. See fig-11 for more details Test Condition Output to GND Tmin. < Tamb < Tmax. Output to GND Tmin. < Tamb < Tmax. -140 Min. 135 Typ. 205 195 -210 -185 mA Max. Unit
Noise and distortion
eN Equivalent Input Noise Voltage see application note on page 13 Equivalent Input Noise Current (+) see application note on page 13 Equivalent Input Noise Current (-) see application note on page 13 Spurious Free Dynamic Range The highest harmonic of the output spectrum when injecting a filtered sine wave F = 100kHz F = 100kHz F = 100kHz AV = +1, Vout = 1Vp-p F = 10MHz F = 20MHz F = 50MHz F = 100MHz 1.5 20 13 -66 -57 -46 -42 nV/Hz pA/Hz pA/Hz
iN
SFDR
dBc
Table 4: Closed-loop gain and feedback components
VCC (V) Gain +10 -10 2.5 +2 -2 +1 -1 Rfb () 300 300 300 300 820 300 -3dB Bw (MHz) 125 120 390 370 550 350 0.1dB Bw (MHz) 22 20 110 70 65 120
4/21
Electrical Characteristics
Figure 1: Frequency response, positive gain
TSH350
Figure 4: Frequency response, negative gain
24 22 20 18 16 14
24 22 20 18 16 14
Gain=+10
Gain=-10
Gain=+4
Gain=-4
Gain (dB)
Gain (dB)
12 10 8 6 4 2 0 -2 -4 -6 -8
Gain=+2
12 10 8 6 4 2 0 -2 -4 -6 -8
Gain=-2
Gain=+1
Gain=-1
-10 1M
Small Signal Vcc=5V Load=100
10M 100M 1G
-10 1M
Small Signal Vcc=5V Load=100
10M 100M 1G
Frequency (Hz)
Frequency (Hz)
Figure 2: Compensation, gain=+4
12,1
Figure 5: Compensation, gain=+2
6,2
12,0
6,1
Gain Flatness (dB)
Gain Flatness (dB)
6,0
11,9
Vin
+
5,9
Vin
+ -
Vout
Vout
11,8
4pF
-
5,8
300R 100R
8k2 2pF
300R 100R
11,7 5,7
Gain=+4, Vcc=5V, Small Signal
Gain=+2, Vcc=5V, Small Signal
11,6 1M
10M
100M
5,6 1M
10M
100M
1G
Frequency (Hz)
Frequency (Hz)
Figure 3: Frequency response vs. capa-load
10 8 6 C-Load=1pF R-iso=22ohms
Figure 6: Step response vs. capa-load
3
C-Load=1pF R-iso=22ohms 2
Output step (Volt)
4
Gain (dB)
2 0 -2 -4 -6 -8 -10 1M
300R 300R 1k C-Load Vin
+ -
C-Load=10pF R-iso=39ohms
C-Load=10pF R-iso=39ohms 1
C-Load=22pF R-iso=27ohms
Vin
+ -
Vout R-iso
C-Load=22pF R-iso=27ohms
Vout R-iso 1k C-Load
0
300R 300R
Gain=+2, Vcc=5V, Small Signal
Gain=+2, Vcc=5V, Small Signal
-1 0,0s 10M 100M 1G
2,0ns 4,0ns 6,0ns 8,0ns 10,0ns 12,0ns 14,0ns 16,0ns 18,0ns 20,0ns
Time (ns)
Frequency (Hz)
5/21
TSH350
Figure 7: Slew rate
Electrical Characteristics
Figure 10: Output amplitude vs. load
4,0
2,0
Max. Output Amplitude (Vp-p)
Output Response (V)
3,5
1,5
1,0
3,0
0,5
2,5
0,0 -2ns -1ns 0s 1ns
Gain=+2 Vcc=5V Load=100
2ns 3ns
2,0 10 100 1k 10k
Gain=+2 Vcc=5V Load=100
100k
Time (ns)
Load (ohms)
Figure 8: Isink
300
+2.5V VOL
without load
Figure 11: Isource
0
250
+
-1V
-50
Isink V - 2.5V
_
RG
Isink (mA)
Amplifier in open loop without load
150
Isource (mA)
200
-100
-150
+
+2.5V VOH
without load
100
-200
+1V
_
- 2.5V
Isource V
50
-250
RG
Amplifier in open loop without load
0 -2,0
-1,5
-1,0
-0,5
0,0
-300 0,0
0,5
1,0
1,5
2,0
V (V)
V (V)
Figure 9: Input current noise vs. frequency
70
Figure 12: Input voltage noise vs. frequency
4.0
60
Pos. Current Noise
3.5
50
3.0
Neg. Current Noise
in (pA/VHz)
40
en (nV/VHz)
1M 10M
2.5
30
2.0
20
1.5
10 1k 10k 100k
1.0 1k 10k 100k 1M 10M
Frequency (Hz)
Frequency (Hz)
6/21
Electrical Characteristics
Figure 13: Quiescent current vs. Vcc
5 4 3
TSH350
Figure 16: Distortion vs. output amplitude
0 -5
Icc(+)
-10 -15 -20
HD2 & HD3 (dBc)
2
-25 -30 -35 -40 -45 -50 -55 -60 -65
Icc (mA)
1 0 -1 -2 -3 -4 -5 1,25
Gain=+2 Vcc=5V Input to ground, no load
HD2
HD3
Icc(-)
-70 -75 -80
1,75 2,00 2,25 2,50
Gain=+2 Vcc=5V F=30MHz Load=100
1 2 3 4
1,50
0
+/-Vcc (V)
Output Amplitude (Vp-p)
Figure 14: Distortion vs. output amplitude
-20 -25 -30 -35 -40
Figure 17: Noise figure
40 35 30 25
HD2 & HD3 (dBc)
-45 -50 -60 -65 -70 -75 -80 -85 -90 -95 -100 0 1 2 3 4 -55
NF (dB)
Gain=+2 Vcc=5V F=10MHz Load=100
HD2
20 15 10 5 0 1 10 100 1k 10k 100k
HD3
Gain=? Vcc=5V
Output Amplitude (Vp-p)
Rsource (ohms)
Figure 15: Distortion vs. output amplitude
-20 -25 -30 -35 -40
Figure 18: Output amplitude vs. frequency
5
4
HD2 & HD3 (dBc)
-45 -50 -55 -60 -65 -70 -75 -80 -85 -90 -95 -100 0
HD2
Vout max. (Vp-p)
Gain=+2 Vcc=5V F=20MHz Load=100
1 2 3 4
3
2
HD3
1
0 1M
Gain=+2 Vcc=5V Load=100
10M 100M 1G
Output Amplitude (Vp-p)
Frequency (Hz)
7/21
TSH350
Figure 19: Reverse isolation vs. frequency
0
Electrical Characteristics
Figure 22: SVR vs. temperature
90 85
-20
80 75 70 65 60
Isolation (dB)
-40
-60
-80
SVR (dB)
-100 1M
Small Signal Vcc=5V Load=100
10M 100M 1G
55 50
Gain=+1 Vcc=5V Load=100
-40 -20 0 20 40 60 80 100 120
Frequency (Hz)
Temperature (C)
Figure 20: Bandwidth vs. temperature
550
Figure 23: ROL vs. temperature
340
500
320
450
300
Bw (MHz)
400
ROL (M)
Gain=+1 Vcc=5V Load=100
-40 -20 0 20 40 60 80 100 120
280 260
350
300
240
250
220
Open Loop Vcc=5V
-40 -20 0 20 40 60 80 100 120
200
200
Temperature (C)
Temperature (C)
Figure 21: CMR vs. temperature
70
Figure 24: I-bias vs. temperature
14
68
12
66
10
64
Ib(+)
8
CMR (dB)
IBIAS (A)
62 60 58 56
6 4 2 0
Ib(-)
54 52 50
Gain=+1 Vcc=5V Load=100
-40 -20 0 20 40 60 80 100 120
-2 -4
Gain=+1 Vcc=5V Load=100
-40 -20 0 20 40 60 80 100 120
Temperature (C)
Temperature (C)
8/21
Electrical Characteristics
Figure 25: Vio vs. temperature
1000
TSH350
Figure 27: Icc vs. temperature
6 4
800 2
Icc(+)
VIO (micro V)
ICC (mA)
600
0 -2
400
Icc(-)
-4 -6
200
Open Loop Vcc=5V Load=100
-40 -20 0 20 40 60 80 100 120
-8 -10
Gain=+1 Vcc=5V no Load In+/In- to GND
-40 -20 0 20 40 60 80 100 120
0
Temperature (C)
Temperature (C)
Figure 26: VOH & VOL vs. temperature
Figure 28: Iout vs. temperature
300
2
200
1 0
VOH
100
Isource
VOH & OL (V)
-1 -2
VOL
Iout (mA)
0
-100
Isink
-200
-3
-4
Gain=+1 Vcc=5V Load=100
-20 0 20 40 60 80
-300
-400
Output: short-circuit Gain=+1 Vcc=5V
-40 -20 0 20 40 60 80 100 120
-5 -40
Temperature (C)
Temperature (C)
9/21
TSH350
Evaluation Boards
3 Evaluation Boards
An evaluation board kit optimized for high speed operational amplifiers is available (order code: KITHSEVAL/STDL). The kit includes the following evaluation boards, as well as a CD-ROM containing datasheets, articles, application notes and a user manual:
l SOT23_SINGLE_HF BOARD: Board for the evaluation of a single high-speed op-amp in SOT23-5
package.
l SO8_SINGLE_HF: Board for the evaluation of a single high-speed op-amp in SO8 package. l SO8_DUAL_HF: Board for the evaluation of a dual high-speed op-amp in SO8 package. l SO8_S_MULTI: Board for the evaluation of a single high-speed op-amp in SO8 package in inverting
and non-inverting configuration, dual and signle supply.
l SO14_TRIPLE: Board for the evaluation of a triple high-speed op-amp in SO14 package with video
application considerations.
Board material:
l 2 layers l FR4 (r=4.6) l epoxy 1.6mm l copper thickness: 35m
Figure 29: Evaluation kit for high speed op-amps
10/21
Power Supply Considerations
TSH350
4 Power Supply Considerations
Correct power supply bypassing is very important for optimizing performance in high-frequency ranges. Bypass capacitors should be placed as close as possible to the IC pins to improve high-frequency bypassing. A capacitor greater than 1F is necessary to minimize the distortion. For better quality bypassing, a capacitor of 10nF can be added using the same implementation conditions. Bypass capacitors must be incorporated for both the negative and the positive supply. Note:
On the SO8_SINGLE_HF board, these capacitors are C6, C7, C8, C9.
Figure 30: Circuit for power supply bypassing
+VCC +
10microF
10nF
+ 10nF
10microF + -VCC
Single power supply
In the event that a single supply system is used, new biasing is necessary to assume a positive output dynamic range between 0V and +VCC supply rails. Considering the values of VOH and VOL, the amplifier will provide an output dynamic from +0.9V to +4.1V on 100 load. The amplifier must be biased with a mid-supply (nominally +VCC/2), in order to maintain the DC component of the signal at this value. Several options are possible to provide this bias supply, such as a virtual ground using an operational amplifier or a two-resistance divider (which is the cheapest solution). A high resistance value is required to limit the current consumption. On the other hand, the current must be high enough to bias the non-inverting input of the amplifier. If we consider this bias current (35A max.) as the 1% of the current through the resistance divider to keep a stable mid-supply, two resistances of 750 can be used. The input provides a high pass filter with a break frequency below 10Hz which is necessary to remove the original 0 volt DC component of the input signal, and to fix it at +VCC/2. Figure 31 illustrates a 5V single power supply configuration for the SO8_S_MULTI evaluation board (see Evaluation Boards on page 10).
11/21
TSH350
Power Supply Considerations
A capacitor CG is added in the gain network to ensure a unity gain in low frequency to keep the right DC component at the ouput. CG contirbutes to a high pass filter with Rfb//RG and its value is calculated with a consideration of the cut off frequency of this low pass filter. Figure 31: Circuit for +5V single supply (using evaluation board SO8_S_MULTI)
+5V 10F IN +5V R1 750 Rfb R2 750 + 1F 10nF + RG CG Rin 1k
+
_
100F
OUT 100
12/21
Noise Measurements
TSH350
5 Noise Measurements
The noise model is shown in Figure 32, where:
l eN: input voltage noise of the amplifier l iNn: negative input current noise of the amplifier l iNp: positive input current noise of the amplifier
Figure 32: Noise model
+
R3
iN+
_
output HP3577 Input noise: 8nV/Hz
N3
iN-
eN
N2
R1
R2
N1
The thermal noise of a resistance R is:
4kTR F
where F is the specified bandwidth. On a 1Hz bandwidth the thermal noise is reduced to
4kTR
where k is the Boltzmann's constant, equal to 1,374.10-23J/K. T is the temperature (K). The output noise eNo is calculated using the Superposition Theorem. However eNo is not the simple sum of all noise sources, but rather the square root of the sum of the square of each noise source, as shown in Equation 1:
eNo = 2 2 2 2 2 2 V1 + V2 + V3 + V4 + V5 + V6
Equation 1
e No
2
2 2 2 2 2 2 2 R2 2 R2 2 = e N x g + iNn x R2 + iNp x R3 x g + ------- x 4kTR1 + 4kTR2 + 1 + ------- x 4kTR3 R1 R1
Equation 2
13/21
TSH350
Noise Measurements
The input noise of the instrumentation must be extracted from the measured noise value. The real output noise value of the driver is:
eNo = 2 2 ( Measured ) - ( instrumentation )
Equation 3
The input noise is called the Equivalent Input Noise as it is not directly measured but is evaluated from the measurement of the output divided by the closed loop gain (eNo/g). After simplification of the fourth and the fifth term of Equation 2 we obtain:
eNo 2 2 2 2 2 2 2 2 R2 2 = eN x g + iNn x R2 + iNp x R3 x g + g x 4kTR2 + 1 + ------- x 4kTR3 R1
Equation 4
Measurement of the Input Voltage Noise eN
If we assume a short-circuit on the non-inverting input (R3=0), from Equation 4 we can derive:
eNo = 2 2 2 2 eN x g + iNn x R2 + g x 4kTR2
Equation 5
In order to easily extract the value of eN, the resistance R2 will be chosen to be as low as possible. In the other hand, the gain must be large enough: R3=0, gain: g=100
Measurement of the Negative Input Current Noise iNn
To measure the negative input current noise iNn, we set R3=0 and use Equation 5. This time the gain must be lower in order to decrease the thermal noise contribution: R3=0, gain: g=10
Measurement of the Positive Input Current Noise iNp
To extract iNp from Equation 3, a resistance R3 is connected to the non-inverting input. The value of R3 must be chosen in order to keep its thermal noise contribution as low as possible against the iNp contribution: R3=100W, gain: g=10
14/21
Intermodulation Distortion Product
TSH350
6 Intermodulation Distortion Product
The non-ideal output of the amplifier can be described by the following series:
2 n Vout = C + C V + C V in + ...C V in 0 1 in 2 n
due to non-linearity in the input-output amplitude transfer, where the input is Vin=Asint, C0 is the DC component, C1(Vin) is the fundamental and Cn is the amplitude of the harmonics of the output signal Vout. A one-frequency (one-tone) input signal contributes to harmonic distortion. A two-tone input signal contributes to harmonic distortion and to the intermodulation product. The study of the intermodulation and distortion for a two-tone input signal is the first step in characterizing the driving capability of multi-tone input signals. In this case:
V in = A sin t + A sin t 1 2
then:
V out 2 n = C + C ( A sin t + A sin t ) + C ( A sin t + A sin t ) ... + C ( A sin t + A sin t ) 0 1 1 2 1 2 1 2 2 n
From this expression, we can extract the distortion terms, and the intermodulation terms form a single sine wave: second order intermodulation terms IM2 by the frequencies (1-2) and (1+2) with an amplitude of C2A2 and third order intermodulation terms IM3 by the frequencies (21-2), (21+2), (- 1+22) and (1+22) with an amplitude of (3/4)C3A3. The measurement of the intermodulation product of the driver is achieved by using the driver as a mixer by a summing amplifier configuration (see Figure 33). In this way, the non-linearity problem of an external mixing device is avoided. Figure 33: Inverting summing amplifier (using evaluation board SO8_S_MULTI)
Vin1 Vin2
R1
Rfb
R2
_
Vout
+
100
R
15/21
TSH350
The Bias of an Inverting Amplifier
7 The Bias of an Inverting Amplifier
A resistance is necessary to achieve a good input biasing, such as resistance R shown in Figure 33. The magnitude of this resistance is calculated by assuming the negative and positive input bias current. The aim is to compensate for the offset bias current, which could affect the input offset voltage and the output DC component. Assuming Ib-, Ib+, Rin, Rfb and a zero volt output, the resistance R will be: R in x R fb R = ---------------------R i n + R fb
Figure 34: Compensation of the input bias current
Rfb
Ib-
Rin
_
Vcc+ Output
+
Ib+ R Vcc-
Load
16/21
Active Filtering
TSH350
8 Active Filtering
Figure 35: Low-pass active filtering, Sallen-Key
C1
R1 IN
R2 C2
+
OUT
_
100
Rfb RG
From the resistors Rfb and RG we can directly calculate the gain of the filter in a classical non-inverting amplification configuration:
A R fb g = 1 + --------V= R g
We assume the following expression as the response of the system:
T Vout j g = ------------------- = --------------------------------------------j Vin 2 j j ( j ) 1 + 2 ------ + ------------c 2 c
The cut-off frequency is not gain-dependent and so becomes:
1 c = ------------------------------------R1R2C 1C2
The damping factor is calculated by the following expression:
1 = -- c ( C1 R 1 + C1 R 2 + C2 R 1 - C1 R 1 g ) 2
The higher the gain, the more sensitive the damping factor is. When the gain is higher than 1, it is preferable to use some very stable resistor and capacitor values. In the case of R1=R2=R:
R fb 2 C2 - C --------1R g = ----------------------------------2CC 12
17/21
TSH350
Active Filtering
Due to a limited selection of values of capacitors in comparison with resistors, we can fix C1=C2=C, so that:
R fb 2 R2 - R 1 --------R g = ----------------------------------2RR 12
18/21
Package Mechanical Data
TSH350
9 Package Mechanical Data
SOT23-5L MECHANICAL DATA
mm. DIM. MIN. A A1 A2 b C D E E1 e e1 L 0.35 0.90 0.00 0.90 0.35 0.09 2.80 2.60 1.50 0 .95 1.9 0.55 13.7 TYP MAX. 1.45 0.15 1.30 0.50 0.20 3.00 3.00 1.75 MIN. 35.4 0.0 35.4 13.7 3.5 110.2 102.3 59.0 37.4 74.8 21.6 TYP. MAX. 57.1 5.9 51.2 19.7 7.8 118.1 118.1 68.8 mils
19/21
TSH350
Package Mechanical Data
SO-8 MECHANICAL DATA
DIM. A A1 A2 B C D E e H h L k ddd 0.1 5.80 0.25 0.40 mm. MIN. 1.35 0.10 1.10 0.33 0.19 4.80 3.80 1.27 6.20 0.50 1.27 0.228 0.010 0.016 TYP MAX. 1.75 0.25 1.65 0.51 0.25 5.00 4.00 MIN. 0.053 0.04 0.043 0.013 0.007 0.189 0.150 0.050 0.244 0.020 0.050 inch TYP. MAX. 0.069 0.010 0.065 0.020 0.010 0.197 0.157
8 (max.)
0.04
0016023/C
20/21
TSH350
Revision History
10 Revision History
Date 01 Oct 2004 December 2004 Revision 1 2 Description of Changes First release corresponding to Preliminary Data version of datasheet. Release of mature product datasheet.
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2004 STMicroelectronics - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom http://www.st.com
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