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| SI1307DL New Product Vishay Siliconix P-Channel 1.8-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.290 @ VGS = -4.5 V -12 12 0.435 @ VGS = -2.5 V 0.580 @ VGS = -1.8 V ID (A) "0.91 "0.74 "0.64 SOT-323 SC-70 (3-LEADS) G 1 LC D XX YY Lot Traceability and Date Code Part # Code 3 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C ID TA = 70_C IDM IS PD TJ, Tstg -0.28 0.34 0.22 -55 to 150 Symbol VDS VGS 5 secs Steady State -12 "8 Unit V "0.91 "0.72 "3 "0.85 "0.68 A -0.24 0.29 W 0.19 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1" x 1" FR4 Board. Document Number: 71077 S-63637--Rev. A, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 t v 5 sec Steady State Steady State Symbol RthJA RthJF Typical 315 360 285 Maximum 375 430 340 Unit _C/W 2-1 SI1307DL Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VGS(th) IGSS IDSS ID(on) VDS = VGS, ID = -250 mA VDS = 0 V, VGS = "8 V VDS = -9.6 V, VGS = 0 V VDS = -9.6 V, VGS = 0 V, TJ = 70_C VDS = -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -1 A Drain-Source On-State Resistancea DiS OS Ri rDS(on) VGS = -2.5 V, ID = -0.5 A VGS = -1.8 V, ID = -0.3 A Forward Transconductancea Diode Forward Voltagea gfs VSD VDS = -5 V, ID = -1 A IS = -1 A, VGS = 0 V -3 0.240 0.350 0.480 3.5 -1.2 0.290 0.435 0.580 S V W -0.45 "100 -1 -5 V nA mA A Symbol Test Condition Min Typ Max Unit Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Source-Drain Reverse Recovery Time Qg Qgs Qgd td(on) tr td(off) tf trr IF = -1 A, di/dt = 100 A/ms VDD = -6 V, RL = 4 W 6 V, ID ^ -1 A, VGEN = -4.5 V RG = 6 W 1A 4 5 V, VDS = -6 V, VGS = -4.5 V ID = -1 A 6V 4 5 V, 1 3.2 0.59 0.56 7.5 32 17 11.5 32 12 45 25 20 52 ns 5 nC C Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 4.5 V 4V 5 6 I D - Drain Current (A) 3.5 V I D - Drain Current (A) 3V 4 4 6 Transfer Characteristics TC = -55_C 25_C 125_C 3 2.5 V 2 2 2V 1.5 V 0.5, 1 V 1 0 0 1 2 3 4 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 VDS - Drain-to-Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 VGS - Gate-to-Source Voltage (V) Document Number: 71077 S-63637--Rev. A, 01-Nov-99 2-2 SI1307DL New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Drain Current 1.4 r DS(on) - On-Resistance ( W ) 1.2 C - Capacitance (pF) VGS = 1.8 V 1.0 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 6 7 VGS = 4.5 V 100 50 Crss 0 0 3 6 9 12 VGS = 2.5 V 400 350 300 250 200 150 Coss Ciss Vishay Siliconix Capacitance ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) Gate Charge 8 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 1 A 6 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 1 A 1.2 4 r DS(on) - On-Resistance (W) (Normalized) 2 3 4 5 0.8 2 0.4 0 0 1 Qg - Total Gate Charge (nC) 0 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) Source-Drain Diode Forward Voltage 10 1.6 On-Resistance vs. Gate-to-Source Voltage r DS(on) - On-Resistance ( W ) TJ = 150_C I S - Source Current (A) 1 1.2 ID = 1 A 0.8 0.1 TJ = 25_C 0.01 0.4 0.001 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Source-to-Drain Voltage (V) 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS - Gate-to-Source Voltage (V) Document Number: 71077 S-63637--Rev. A, 01-Nov-99 www.vishay.com S FaxBack 408-970-5600 2-3 SI1307DL Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Threshold Voltage 0.4 20 Single Pulse Power 0.3 V GS(th) Variance (V) ID = 250 mA 0.2 Power (W) 16 12 TA = 25_C 8 0.1 0.0 4 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 0 10-3 10-2 10-1 1 10 100 600 TJ - Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 Notes: 0.1 0.1 0.05 t1 PDM 0.02 t2 1. Duty Cycle, D = 2. Per Unit Base = RthJA = 360_C/W t1 t2 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (sec) 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 www.vishay.com S FaxBack 408-970-5600 2-4 Document Number: 71077 S-63637--Rev. A, 01-Nov-99 |
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