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| SEMICONDUCTOR TECHNICAL DATA Order this document by MRF321/D The RF Line NPN Silicon RF Power Transistor . . . designed primarily for wideband large-signal driver and predriver amplifier stages in 200-500 MHz frequency range. * Guaranteed Performance at 400 MHz, 28 Vdc Output Power = 10 Watts Power Gain = 12 dB Min Efficiency = 50% Min * 100% Tested for Load Mismatch at all Phase Angles with 30:1 VSWR * Gold Metallization System for High Reliability * Computer-Controlled Wirebonding Gives Consistent Input Impedance MRF321 10 W, 400 MHz RF POWER TRANSISTOR NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current -- Continuous Collector Current -- Peak Total Device Dissipation @ TA = 25C (1) Derate above 25C Storage Temperature Range Symbol VCEO VCBO VEBO IC PD Tstg Value 33 60 4.0 1.1 1.5 27 160 -65 to +150 Unit Vdc Vdc Vdc Adc Watts mW/C C CASE 244-04, STYLE 1 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol RJC Max 6.4 Unit C/W ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 20 mAdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 20 mAdc, VBE = 0) Collector-Base Breakdown Voltage (IC = 20 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 2.0 mAdc, IC = 0) Collector Cutoff Current (VCB = 30 Vdc, IE = 0) V(BR)CEO V(BR)CES V(BR)CBO V(BR)EBO ICBO 33 60 60 4.0 -- -- -- -- -- -- -- -- -- -- 1.0 Vdc Vdc Vdc Vdc mAdc ON CHARACTERISTICS DC Current Gain (IC = 500 mA, VCE = 5.0 Vdc) hFE 20 -- 80 -- NOTE: (continued) 1. This device is designed for RF operation. The total device dissipation rating applies only when the device is operated as an RF amplifier. 1 ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted.) Characteristic Symbol Min Typ Max Unit DYNAMIC CHARACTERISTICS Output Capacitance (VCB = 28 Vdc, IE = 0, f = 1.0 MHz) Cob -- 10 12 pF FUNCTIONAL TESTS (Figure 1) Common-Emitter Amplifier Power Gain (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) Collector Efficiency (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz) Load Mismatch (VCC = 28 Vdc, Pout = 10 W, f = 400 MHz, VSWR = 30:1 all phase angles) GPE No Degradation in Output Power 12 50 13 60 -- -- dB % 5V + - R2 D1 R3 R4 C9 L3 L1 Z3 DUT C10 C11 L4 C12 + C8 + 28 V - C13 Z4 RF OUTPUT RF INPUT Z1 Z2 L2 C5 R1 C6 C7 C1 C2 C3 C4 C1, C2, C3 -- 1.0-20 pF Johanson Trimmer (JMC 5501) C3, C4 -- 47 pF ATC Chip Capacitor C5, C10 -- 0.1 F Erie Redcap C7 -- 0.5-10 pF Johanson Trimmer (JMC 5201) C8 -- 0.018 F Vitramon Chip Capacitor C9 -- 200 pF UNELCO Capacitor C11, C12 -- 680 pF Feedthru C13 -- 1.0 F, 50 Volt Tantalum Capacitor D1 -- 1N4001 L1 -- 0.33 H Molded Choke with Ferroxcube Bead L1 -- (Ferroxcube 56-590-65/4B) on Ground End of Coil L2 -- 4 Turns #20 Enamel, 1/8 ID L3 -- 6 Turns #20 Enamel, 1/4 ID L4 -- Ferroxcube VK200-19/4B R1 -- 5.1 , 1/4 Watt R2 -- 120 , 1.0 Watt R3 -- 20 , 1/2 Watt R4 -- 47 , 1/2 Watt Z1 -- Microstrip 0.1 W x 1.35 L Z2 -- Microstrip 0.1 W x 0.55 L Z3 -- Microstrip 0.1 W x 0.8 L Z4 -- Microstrip 0.1 W x 1.75 L Board -- Glass Teflon, R = 2.56, t = 0.062 Input/Output Connectors -- Type N Figure 1. 400 MHz Test Circuit Schematic 2 12 Pout , OUTPUT POWER (WATTS) Pout , OUTPUT POWER (WATTS) 10 8 6 4 VCC = 28 V 2 100 200 300 400 0.1 W f, FREQUENCY (MHz) 12 10 8 6 4 f = 200 MHz 400 500 Pin = 1 W 0.7 W 0.5 W 0.4 W 0.3 W 0.2 W 500 600 VCC = 28 V 2 0 300 600 900 1200 1500 Pin, INPUT POWER (mW) Figure 2. Output Power versus Frequency Figure 3. Output Power versus Input Power 12 10 8 6 4 f = 400 MHz 2 10 14 18 22 26 30 Pin = 0.5 W G PE , COMMON EMITTER AMPLIFIER POWER GAIN (dB) Pout , OUTPUT POWER (WATTS) 22 18 14 10 6 2 Po = 10 W VCC = 28 V 0.35 W 200 300 400 500 VCC, SUPPLY VOLTAGE (VOLTS) f, FREQUENCY (MHz) Figure 4. Output Power versus Supply Voltage Figure 5. Power Gain versus Frequency 3 0 -5 -10 f = 200 MHz 400 Zin 500 5 Po = 10 W, VCC = 28 V f MHz 200 400 500 500 400 Zin Ohms 0.68 - j0.75 0.89 + j2.7 1.3 + j4.3 ZOL* Ohms 14.2 - j22 9.8 - j14.4 9.3 - j13 5 10 15 ZOL* 20 f = 200 MHz 25 ZOL* = Conjugate of the optimum load impedance into which the device output operates at a given output power, ZOL* = voltage and frequency. Figure 6. Series Equivalent Impedance 4 PACKAGE DIMENSIONS 2 3 4 1 D K M DIM A B C D E G J K M P S T U STYLE 1: PIN 1. 2. 3. 4. MILLIMETERS MIN MAX 7.06 7.26 6.20 6.50 14.99 16.51 5.46 5.96 1.40 1.65 1.52 --0.08 0.17 11.05 --45_NOM --1.27 3.00 3.25 1.40 1.77 2.92 3.68 INCHES MIN MAX 0.278 0.286 0.244 0.256 0.590 0.650 0.215 0.235 0.055 0.065 0.060 --0.003 0.007 0.435 --45 _NOM --0.050 0.118 0.128 0.055 0.070 0.115 0.145 T A J F SEATING PLANE P 8-32 NC 2A U S C WRENCH FLAT E B EMITTER BASE EMITTER COLLECTOR CASE 244-04 ISSUE J Specifications subject to change without notice. n North America: Tel. (800) 366-2266, Fax (800) 618-8883 n Asia/Pacific: Tel.+81-44-844-8296, Fax +81-44-844-8298 n Europe: Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020 Visit www.macom.com for additional data sheets and product information. 5 |
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