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MMBT2222, MMBT2222A NPN
Switching Transistors NPN
Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren fur die Oberflachenmontage
Version 2004-05-04
Power dissipation - Verlustleistung
2.9 0.1 0.4
3
250 mW SOT-23 (TO-236) 0.01 g
1.1
Plastic case Kunststoffgehause
1.3 0.1
Type Code
1 2
2.5 max
Weight approx. - Gewicht ca. Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle
1.9
Dimensions / Mae in mm 1=B 2=E 3=C
Maximum ratings (TA = 25C)
Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation - Verlustleistung Collector current - Kollektorstrom (dc) Junction temp. - Sperrschichttemperatur Storage temperature - Lagerungstemperatur B open E open C open VCE0 VCB0 VEB0 Ptot IC Tj TS
Grenzwerte (TA = 25C)
MMBT2222 30 V 60 V 5V 250 mW ) 600 mA 150C - 65...+ 150C
1
MMBT2222A 40 V 75 V 6V
Characteristics (Tj = 25C)
Min. Collector-Base cutoff current - Kollektorreststrom IE = 0, VCB = 50 V IE = 0, VCB = 60 V IE = 0, VCB = 50 V, Tj = 150C IE = 0, VCB = 60 V, Tj = 150C IC = 0, VEB = 3 V MMBT2222 MMBT2222A MMBT2222 MMBT2222A ICB0 ICB0 ICB0 ICB0 IEB0 VCEsat VCEsat VCEsat VCEsat - - - -
Kennwerte (Tj = 25C)
Typ. - - - - Max. 10 nA 10 nA 10 A 10 A
Emitter-Base cutoff current - Emitterreststrom MMBT2222A - - 100 nA Collector saturation voltage - Kollektor-Sattigungsspannung 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A - - - - - - - - 400 mV 300 mV 1.6 V 1V
1
) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu
20
Switching Transistors Characteristics (Tj = 25C)
MMBT2222, MMBT2222A Kennwerte (Tj = 25C)
Min. Typ. - - - - - - - - - - - - - - - - - 4 pF 20 pF Max. 1.3 V 1.2 V 2.6 V 2V - - - 300 - - 300 375 8 k 1.25 k 35 S 200 S - 8 pF 25 pF
1
Base saturation voltage - Basis-Sattigungsspannung ) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A VBEsat VBEsat VBEsat VBEsat hFE hFE hFE hFE hFE hFE MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A hfe hfe hie hie hoe hoe fT CCB0 CEB0 - 600 mV - - 35 50 75 100 50 40 50 75 2 k 0.25 k 5 S 25 S 250 MHz - -
DC current gain - Kollektor-Basis-Stromverhaltnis 1) VCE = 10 V, IC = 0.1 mA VCE = 10 V, IC = 1 mA VCE = 10 V, IC = 10 mA VCE = 10 V, IC = 150 mA VCE = 1 V, IC = 150 mA VCE = 10 V, IC = 500 mA Small signal current gain Kleinsignal-Stromverstarkung Input impedance Eingangs-Impedanz Output admittance Ausgangs-Leitwert
h-Parameters at VCE = 10V, f = 1 kHz, IC = 1 mA / 10 mA 2)
Gain-Bandwidth Product - Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz VCB = 10 V, IE = ie = 0, f = 1 MHz Emitter-Base Capacitance - Emitter-Basis-Kapazitat VEB = 0.5 V, IC = ic = 0, f = 1 MHz Noise figure - Rauschzahl VCE = 10 V, IC = 100 A, RS = 1 k, f = 1 kHz Switching times - Schaltzeiten delay time rise time storage time fall time VCC = 30 V, - VBE = 0.5 V IC = 150 mA, IB1 = 15 mA VCC = 30 V, IC = 150 mA IB1 = - IB2 = 15 mA td tr ts tf - - - - RthA - - - - 10 ns 25 ns 225 ns 60 ns 420 K/W 3) MMBT2907, MMBT2907A MMBT2222 = (M)1B MMBT2222A = 1P MMBT2222A F - - 4 dB Collector-Base Capacitance - Kollektor-Basis-Kapazitat
Thermal resistance junction to ambient air Warmewiderstand Sperrschicht - umgebende Luft Recommended complementary PNP transistors Empfohlene komplementare PNP-Transistoren Marking - Stempelung
) Tested with pulses tp = 300 s, duty cycle 2% - Gemessen mit Impulsen tp = 300 s, Schaltverhaltnis 2% ) MMBT2222: IC = 1 mA, MMBT2222A: IC = 10 mA 3 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lotpad) an jedem Anschlu
1 2
21

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