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| SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity : hFE(2)=25(Min.) at VCE=-6V, IC=-400mA. A G L KTA1505S EPITAXIAL PLANAR PNP TRANSISTOR E B L Complementary to KTC3876S. 2 3 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range ) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg RATING -35 -30 -5 -500 -50 150 150 -55 150 UNIT V V V mA mA mW C N P P DIM A B C D E G H J K L M N P MILLIMETERS _ 2.93 + 0.20 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 H M 1. EMITTER 2. BASE 3. COLLECTOR K SOT-23 Marking h FE Rank Type Name Lot No. AZ ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Collector Cut-off Current Emitter Cut-off Current DC Current Gain (Note) Collector-Emitter Saturation Voltage Base-Emitter Voltage Transition Frequency Collector Output Capacitance (Note) : hFE(1) Classification hFE(2) Classification O:70 140 O:25Min. SYMBOL ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Y:120 240 Y:40Min. TEST CONDITION VCB=-35V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-6V, IC=-400mA IC=-100mA, IB=-10mA VCE=-1V, IC=-100mA VCE=-6V, IC=-20mA VCB=-6V, IE=0, f=1MHz GR:200 400 MIN. 70 25 TYP. -0.1 -0.8 200 13 MAX. -0.1 -0.1 400 -0.25 -1.0 V V MHz pF UNIT A A 2001. 2. 24 Revision No : 3 J D 1/2 KTA1505S I C - VCE (LOW VOLTAGE REGION) -600 COLLECTOR CURRENT I C (mA) -500 -400 -300 -2 -8 -7 -6 -5 -4 -3 h FE - I C 1k DC CURRENT GAIN h FE COMMON EMITTER COMMON EMITTER Ta=25 C 500 300 Ta=100 C V CE =-6V 100 50 30 -200 -100 0 Ta=25 C Ta=-25 C V CE =-1V I B =-1mA 0 0 -1 -2 -3 -4 -5 10 -0.3 -1 -3 -10 -30 -100 -100 -1k COLLECTOR-EMITTER VOLTAGE V CE (V) COLLECTOR CURRENT I C (mA) VCE(sat) - I C COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) -3 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.5 -1 Ta=100 C Ta=25 C Ta=-25 C COMMON EMITTER I C /I B =10 I B - VBE -3k BASE CURRENT I B (A) -1k -300 -100 -30 -10 -3 -1 -0.3 Ta=2 5C Ta=-2 5C Ta=1 00 C COMMON EMITTER VCE =-6V -3 -10 -30 -100 -300 -1k 0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 COLLECTOR CURRENT I C (mA) BASE-EMITTER VOLTAGE VBE (V) P C - Ta COLLECTOR POWER DISSIPATION P C (mW) 200 150 100 50 0 0 25 50 75 100 125 150 175 AMBIENT TEMPERATURE Ta ( C) 2001. 2. 24 Revision No : 3 2/2 |
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