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| HiPerFETTM Power MOSFETs Single MOSFET Die IXFX 44N60 IXFK 44N60 VDSS ID25 RDS(on) = 600 V = 44 A = 130 mW trr 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions T J = 25C to 150C T J = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/ms, VDD VDSS T J 150C, RG = 2 W TC = 25C Maximum Ratings 600 600 20 30 44 176 44 60 3 5 560 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C Nm/lb.in. 6 10 g g PLUS 247TM (IXFX) G (TAB) D TO-264 AA (IXFK) G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 0.4/6 300 Features * International standard packages * Low RDS (on) HDMOSTM process * Rugged polysilicon gate cell structure * Unclamped Inductive Switching (UIS) rated * Low package inductance - easy to drive and to protect * Fast intrinsic rectifier Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 2.5 V 4.5 V 100 nA TJ = 25C TJ = 125C 100 mA 2 mA 130 mW VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3mA VDS = VGS, ID = 8mA VGS = 20 V, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 * ID25 Note 1 Applications * DC-DC converters * Battery chargers * Switched-mode and resonant-mode power supplies * DC choppers * AC motor control * Temperature and lighting controls Advantages * PLUS 247TM package for clip or spring mounting * Space savings * High power density IXYS reserves the right to change limits, test conditions, and dimensions. 98611B (7/00) (c) 2000 IXYS All rights reserved 1-4 IXFK 44N60 IXFX 44N60 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 30 45 8900 VGS = 0 V, VDS = 25 V, f = 1 MHz 1000 330 40 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 W (External), 50 100 40 330 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 60 65 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 PLUS247TM (IXFX) Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 44 176 1.3 250 A A V ns mC A TO-264 AA (IXFK) Outline IF = 50A,-di/dt = 100 A/ms, VR = 100 V 1.4 8 Note: 1. Pulse test, t 300 ms, duty cycle d 2 % Dim. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T Millimeter Min. Max. 4.82 2.54 2.00 1.12 2.39 2.90 0.53 25.91 19.81 5.46 0.00 0.00 20.32 2.29 3.17 6.07 8.38 3.81 1.78 6.04 1.57 5.13 2.89 2.10 1.42 2.69 3.09 0.83 26.16 19.96 BSC 0.25 0.25 20.83 2.59 3.66 6.27 8.69 4.32 2.29 6.30 1.83 Inches Min. Max. .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 (c) 2000 IXYS All rights reserved IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFK 44N60 IXFX 44N60 Figure 1. Output Characteristics at 25OC 100 TJ = 25 C O Figure 2. Output Characteristics at 125OC 80 TJ = 125OC VGS = 10V 9V 8V 7V 6V 80 ID - Amperes ID - Amperes 60 40 20 0 VGS = 10V 9V 8V 7V 6V 5V 60 5V 40 20 0 0 4 8 12 16 20 24 0 4 8 12 16 20 24 VDS - Volts VDS - Volts Figure 3. RDS(on) normalized to 15A/25OC vs. ID 2.4 VGS = 10V TJ = 125OC Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2.4 VGS = 10V RDS(ON) - Normalized 2.0 RDS(ON) - Normalized 2.0 ID = 44A 1.6 TJ = 25OC 1.6 ID = 22A 1.2 1.2 0.8 0 20 40 60 80 100 0.8 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 60 50 Figure 6. Admittance Curves 60 50 ID - Amperes ID - Amperes 40 30 20 10 0 40 30 20 10 0 3.0 TJ = 125oC TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 TC - Degrees C VGS - Volts (c) 2000 IXYS All rights reserved 3-4 IXFK 44N60 IXFX 44N60 Figure 7. Gate Charge 12 10 VDS = 300V ID = 30A IG = 10mA Figure 8. Capacitance Curves 10000 Ciss f = 1MHz VGS - Volts 8 6 4 2 0 Capacitance - pF Coss 1000 Crss 0 50 100 150 200 250 300 350 400 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 80 ID - Amperes TJ = 125OC 60 40 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 1.2 VSD - Volts Figure 10. Transient Thermal Resistance 1.00 R(th)JC - K/W 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds (c) 2000 IXYS All rights reserved 4-4 |
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