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| FDD6637 35V P-Channel PowerTrench(R) MOSFET October 2005 FDD6637 35V P-Channel PowerTrench(R) MOSFET General Description This P-Channel MOSFET has been produced using Fairchild Semiconductor's proprietary PowerTrench technology to deliver low Rdson and optimized Bvdss capability to offer superior performance benefit in the applications. Features * -55 A, -35 V RDS(ON) = 11.6 m @ VGS = -10 V RDS(ON) = 18 m @ VGS = -4.5 V * High performance trench technology for extremely low RDS(ON) * RoHS Compliant Applications * * Inverter Power Supplies D D G S G D-PAK TO-252 (TO-252) TA=25oC unless otherwise noted S Absolute Maximum Ratings Symbol VDSS VDS(Avalanche) VGSS ID Drain-Source Voltage Parameter Drain-Source Avalanche Voltage (maximum) Gate-Source Voltage Continuous Drain Current @TC=25C @TA=25C Pulsed (Note 3) (Note 1a) (Note 1a) (Note 3) (Note 1a) (Note 1b) (Note 4) Ratings -35 -40 25 -55 -14 -100 57 3.8 1.6 -55 to +150 Units V V V A PD Power Dissipation @TC=25C @TA=25C @TA=25C W TJ, TSTG Operating and Storage Junction Temperature Range C C/W Thermal Characteristics RJC RJA RJA Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient (Note 1) (Note 1a) (Note 1b) 2.2 40 96 Package Marking and Ordering Information Device Marking FDD6637 Device FDD6637 Package D-PAK (TO-252) Reel Size 13'' Tape width 12mm Quantity 2500 units www.fairchildsemi.com (c)2005 Fairchild Semiconductor Corporation FDD6637 Rev C(W) FDD6637 35V P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol EAS IAS TA = 25C unless otherwise noted Parameter Drain-Source Avalanche Energy (Single Pulse) Drain-Source Avalanche Current Test Conditions Min Typ Max Units Drain-Source Avalanche Ratings VDD = -35 V, ID= -11 A, L=1mH 61 -14 mJ A Off Characteristics(Note 2) BVDSS IDSS IGSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) VGS = 0 V, VDS = -28 V, VGS = 25 V, ID = -250 A VGS = 0 V VDS = 0 V -35 -1 100 V A nA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance VDS = VGS, ID = -250 A VGS = -10 V, ID = -14 A VGS = -4.5 V, ID = -11 A VGS = -10 V, ID = -14 A, TJ=125C VDS =-5 V, ID = -14 A -1 -1.6 9.7 14.4 14.7 35 -3 11.6 18 19 V m gFS S Dynamic Characteristics Ciss Coss Crss RG Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance (Note 2) VDS = -20 V, f = 1.0 MHz f = 1.0 MHz V GS = 0 V, 2370 470 250 3.6 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time 18 VDD = -20 V, VGS = -10 V, ID = -1 A, RGEN = 6 10 62 36 45 VDS = - 20 V, ID = -14 A 25 7 10 32 20 100 58 63 35 ns ns ns ns nC nC nC nC Total Gate Charge, VGS = -10V Total Gate Charge, VGS = -5V Gate-Source Charge Gate-Drain Charge FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench(R) MOSFET Electrical Characteristics Symbol VSD trr Qrr TA = 25C unless otherwise noted Parameter Drain-Source Diode Forward Voltage Diode Reverse Recovery Time Diode Reverse Recovery Charge Test Conditions Min Typ Max Units V ns nC Drain-Source Diode Characteristics VGS = 0 V, IS = -14 A IF = -14 A, (Note 2) -0.8 28 15 -1.2 diF/dt = 100 A/s Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA = 40C/W when mounted on a 1in2 pad of 2 oz copper b) RJA = 96C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% PD R DS(ON) 3. Maximum current is calculated as: where PD is maximum power dissipation at TC = 25C and RDS(on) is at TJ(max) and VGS = 10V. Package current limitation is 21A 4. BV(avalanche) Single-Pulse rating is guaranteed if device is operated within the UIS SOA boundary of the device. FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench(R) MOSFET Typical Characteristics 100 VGS = -10V 80 -4.0V -6.0V -5.0V -4.5V -ID, DRAIN CURRENT (A) NORMALIZED DRAIN-SOURCE ON-RESISTANCE 2.4 VGS = -3.5V 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 -VDS, DRAIN-SOURCE VOLTAGE (V) 4 0 20 40 60 -ID, DRAIN CURRENT (A) 80 100 -4.0V -4.5V -5.0V -6.0V -8.0V -10V 60 40 -3.5V 20 -3.0V 0 Figure 1. On-Region Characteristics Figure 2. On-Resistance Variation with Drain Current and Gate Voltage 0.05 1.8 NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -14A VGS = -10V 1.6 RDS(ON), ON-RESISTANCE (OHM) ID = -7A 0.04 1.4 0.03 TA = 125 C 0.02 TA = 25oC 0.01 o 1.2 1 0.8 0.6 -50 0 -25 0 25 50 75 100 o TJ, JUNCTION TEMPERATURE ( C) 125 150 2 4 6 8 -VGS, GATE TO SOURCE VOLTAGE (V) 10 Figure 3. On-Resistance Variation with Temperature 100 Figure 4. On-Resistance Variation with Gate-to-Source Voltage 1000 -IS, REVERSE DRAIN CURRENT (A) VDS = -5V -ID, DRAIN CURRENT (A) 80 TA = -55 C 60 25 C 40 o o VGS = 0V 100 10 1 0.1 0.01 0.001 0.0001 TA = 125 C 25oC -55 C o o 125oC 20 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 5 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) 1.4 Figure 5. Transfer Characteristics Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench(R) MOSFET Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -14A 8 VDS = 10V 30V 3200 f = 1MHz VGS = 0 V CAPACITANCE (pF) 2400 Ciss 20V 6 1600 4 Coss 800 2 Crss 0 0 10 20 30 Qg, GATE CHARGE (nC) 40 50 0 0 5 10 15 20 25 VDS, DRAIN TO SOURCE VOLTAGE (V) 30 Figure 7. Gate Charge Characteristics 1000 P(pk), PEAK TRANSIENT POWER (W) 100 Figure 8. Capacitance Characteristics -ID, DRAIN CURRENT (A) 100 RDS(ON) LIMIT 10 1s 10s 100s 1ms 10ms 100ms 80 SINGLE PULSE RJA = 96C/W TA = 25C 60 1 VGS = -10V SINGLE PULSE o RJA = 96 C/W TA = 25 C o DC 40 0.1 20 0.01 0 0 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) 100 0 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 9. Maximum Safe Operating Area Figure 10. Single Pulse Maximum Power Dissipation 1000 100 I(pk), PEAK TRANSIENT CURRENT (A) SINGLE PULSE RJA = 96C/W TA = 25C 80 I(AS), AVALANCHE CURRENT 100 TJ = 25 C o 60 40 10 20 0 0.01 0.1 1 10 100 1000 1 0.001 0.01 0.1 tAV, TIME IN AVANCHE(ms) 1 10 t1, TIME (sec) Figure 11. Single Pulse Maximum Peak Current Figure 12. Unclamped Inductive Switching Capability FDD6637 Rev. C(W) www.fairchildsemi.com FDD6637 35V P-Channel PowerTrench(R) MOSFET Typical Characteristics r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 RJA(t) = r(t) * RJA RJA = 96 C/W 0.1 0.1 0.05 0.02 0.01 P(pk) t1 t2 SINGLE PULSE 0.01 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.001 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 13. Transient Thermal Response Curve Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDD6637 Rev. C(W) www.fairchildsemi.com TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM Build it NowTM FRFETTM CoolFETTM GlobalOptoisolatorTM CROSSVOLTTM GTOTM DOMETM HiSeCTM EcoSPARKTM I2CTM E2CMOSTM i-LoTM EnSignaTM ImpliedDisconnectTM FACTTM IntelliMAXTM FACT Quiet SeriesTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM ScalarPumpTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I17 |
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