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| DSS 2x101-02A Power Schottky Rectifier IFAV = 2x100 A VRRM = 200 V VF = 0.84 V VRSM V 200 VRRM V 200 Type miniBLOC, SOT-227 B DSS 2x101-02A Symbol IFRMS IFAVM IFAVM IFSM EAS IAR (dv/dt)cr TVJ TVJM Tstg Ptot VISOL Md Weight Conditions TC = 105C; rectangular, d = 0.5 TC = 105C; rectangular, d = 0.5; per device TVJ = 45C; tp = 10 ms (50 Hz), sine IAS = 4 A; L = 100 H; TVJ = 25C; non repetitive VA = 1.5*VRRM typ.; f = 10 kHz; repetitive Maximum Ratings 150 100 200 1400 0.8 0.4 18 -40...+150 150 -40...+150 A A A A mJ A kV/s C C C W V~ Nm/lb.in. Nm/lb.in. g Features * International standard package miniBLOC * Isolation voltage 2500 V~ * UL registered E 72873 * 2 independent Schottky diodes in 1 package * Very low VF * Extremely low switching losses * Low IRM-values Applications * Rectifiers in switch mode power supplies (SMPS) * Free wheeling diode in low voltage converters Advantages * High reliability circuit operation * Low voltage peaks for reduced protection circuits * Low noise switching * Low losses TC = 25C 50/60 Hz, RMS IISOL < 1 mA mounting torque (M4) terminal connection torque (M4) typical 310 2500 1.1-1.5/9-13 1.1-1.5/9-13 30 Symbol IR VF Conditions VR = VRRM; TVJ = 25C TVJ = 125C IF = 100 A; IF = 100 A; IF = 200 A; per diode per diode TVJ = 125C TVJ = 25C TVJ = 125C Characteristic Values typ. max. 4 10 0.84 0.94 1.11 0.4 0.1 mA mA V V V K/W K/W Dimensions see Outlines.pdf RthJC RthCH Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0% Data according to IEC 60747 and per diode unless otherwise specified. IXYS reserves the right to change limits, Conditions and dimensions. (c) 2005 IXYS All rights reserved 1-2 0540 DSS 2x101-02A 1000 10000 TVJ=150C 10 mA A IR 100 IF 0.1 10 TVJ = 150C 125C 25C 1 125C 100C pF CT TVJ= 25C 1000 75C 0.01 50C 25C 1 0.2 0.001 0.4 0.6 0.8 VF 1.0 V 0 50 100 150 VR V 100 0 50 100 150 VR V Fig. 1 Max. forward voltage drop characteristics 160 A 120 IF(AV) DC 80 d = 0.5 W 140 120 P(AV) 100 80 60 40 40 20 0 0 40 80 TC 120 C 0 Fig. 2 Typ. reverse current IR vs. reverse voltage VR Fig. 3 Typ. junction capacitance CT versus reverse voltage VR A IFSM d= DC 0.5 0.33 0.25 0.17 0.08 0 50 100 IF(AV) A tP s Fig. 4 Average forward current IF(AV) versus case temperature TC 1 K/W D= 0.5 Fig. 5 Forward power loss characteristics ZthJC 0.1 0.33 0.25 0.17 0.08 Single Pulse 0.01 0.0001 DSS 2x101-02A 0.001 0.01 0.1 t s 1 Note: All curves are per diode Fig. 6 Transient thermal impedance junction to case at various duty cycles IXYS reserves the right to change limits, Conditions and dimensions. 0540 (c) 2005 IXYS All rights reserved 2-2 |
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